Page 1
A
C
D
H
G E
F
K
B
J P
M
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.40 6.80 G 5.40 5.80
B 5.20 5.50 H 0.90 1.50
C 2.20 2.40 J 2.30
D 0.45 0.55 K 0.60 0.90
E 6.80 7.20 M 0.50 0.70
F 7.20 7.80 P 0.45 0.60
05N10
1
3
2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID05N10 provide the designer with the best
combination of fast switching, The TO-251 package is
universally preferred for all commercial-industrial surface
mount applications. The device is suited for charger,
industrial and consumer environment.
FEATURES
Low On-resistance
Fast Switching Speed
Low-voltage drive (4V)
Wide SOA (safe operating area)
Easily designed drive circuits
Easy to parallel
MARKING:
Date code
SID05N10
5A , 100V , R
N-Channel Enhancement Mode Power MOSFET
Drain
Gate
REF.
170 mΩΩΩΩ
DS(ON)
TO-251
REF.
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
ID
TC=100°C 3.75 A
Pulsed Drain Current1 IDM 20 A
Total Power Dissipation @ TC = 25°C PD 20 W
TC=25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
R
6.25 °C / W
θJC
R
110 °C / W
θJA
Linear Derating Factor 0.16 W / °C
Operating Junction & Storage temperature TJ, T
-55~150 °C
STG
5 A
Unit
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 1 of 4
Page 2
SID05N10
5A , 100V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
DS(ON)
170 mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Forward Trans-conductance gfs - 4 - S V
Gate-Source Leakage Current I
Drain-Source Leakage Current TJ=25°C
Static Drain-Source On-Resistance2 R
Turn-on Delay Time2 T
Rise Time Tr - 9.4 -
Turn-off Delay Time T
Fall Time Tf - 2.6 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
100 - - V VGS=0, ID=1mA
DSS
1 - 2.5 V VDS=10V, ID=1mA
GS(th)
- - ±100
GSS
I
- - 10 uA VDS=100 V, VGS=0
DSS
- - 170
DS(ON)
d(on)
d(off)
- 975 -
iss
- 38 -
oss
- 27 -
rss
- - 200 VGS=4V, ID=2.5A
- 9 -
- 26.8 -
Test Conditions
=10V, ID =2.5A
DS
nA VGS= ±20V
VGS=10 V, ID=2.5A
mΩ
VDD=30V
ID=1A
nS
VGS=10 V
RG=6Ω
RL=30Ω
VGS=0
pF
VDS=25V
f =1 MHz
Source-Drain Diode
Forward On Voltage2 VSD - - 1.5 V IS=5A, VGS=0 ,TJ=25 °C
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse width≦300us, duty cycle≦2%
.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SID05N10
5A , 100V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
170 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SID05N10
5A , 100V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
170 mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A Page 4 of 4
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