Datasheet SiC532 Datasheet (Vishay)

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PWM

controller

Gate

driver

OUT

CIN

PWM

DRV

BOOT

SWH

GND

PHASE

ZCD_EN#

30 A VRPower® Integrated Power Stage

SiC532

Vishay Siliconix

DESCRIPTION

The SiC532 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 4.5 mm x 3.5 mm MLP package, SiC532 enables voltage regulator designs to deliver up to 30 A continuous current per phase.

The internal power MOSFETs utilize Vishay’s state-of-the-art Gen IV TrenchFET industry benchmark performance to significantly reduce switching and conduction losses.

The SiC532 incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, and zero current detection to improve light load efficiency. The driver is also compatible with a wide range of PWM controllers, supports tri-state PWM, and 5 V PWM logic.

A user selectable diode emulation mode (ZCD_EN#) is included to improve the light load performance. The device also supports PS4 mode to reduce power consumption when system operates in standby state.

technology that delivers

FEATURES

• Thermally enhanced PowerPAK® MLP4535-22L package

• Vishay’s Gen IV MOSFET technology and a low-side MOSFET with integrated Schottky diode

• Delivers up to 30 A continuous current, 35 A at 10 ms peak current

• High efficiency performance

• High frequency operation up to 2 MHz

• Power on reset

• 5 V PWM logic with tri-state and hold-off

• Supports PS4 mode light load requirement for IMVP8 with low shutdown supply current (5 V, 3 μA)

• Under voltage lockout for V

CIN

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Multi-phase VRDs for computing, graphics card and memory

• Intel IMVP-8 VRPower delivery

- V

• Up to 24 V rail input DC/DC VR modules

CORE

, V

GRAPHICS

, V

platforms

for Apollo Lake platforms

CCGI

SYSTEM AGENT

Skylake, Kabylake

TYPICAL APPLICATION DIAGRAM

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Fig. 1 - SiC532 Typical Application Diagram

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PINOUT CONFIGURATION

SiC532

Vishay Siliconix

SWH

GNDPGNDPGND

11 10 9 8 7 6

GND

24 GL

17 18 19 20 21 22

GND

VINVINV

GND

PHASE

DRV

PWM

BOOT

ZCD_EN#

N.C.

CIN

Fig. 2 - SiC532 Pin Configuration

PIN DESCRIPTION

PIN NUMBER NAME FUNCTION

The ZCD_EN# pin enables or disables Diode Emulation. When ZCD_EN# is LOW, diode

1 ZCD_EN#

23 C

CIN

GND

3N.C.

4 BOOT High-side driver bootstrap voltage

5 PHASE Return path of high-side gate driver

6 to 8, 25 V

9 to 11, 17, 18, 20, 26 P

12 to 16 V

GND

SWH

19, 24 GL Low-side gate signal

21 V

DRV

22 PWM PWM control input

emulation is allowed. When ZCD_EN# is HIGH, continuous conduction mode is forced. ZCD_EN# can also be put in a high impedance mode by floating the pin. If both ZCD_EN# and PWM are floating, the device shuts down and consumes typically 3 μA (9 μA max.) current

Supply voltage for internal logic circuitry

Analog ground for the driver IC

This pin can be either left floating or connected to C Internally it is either connected to GND or not internally connected depending on manufacturing location.

Factory code “G” on line 3, pin 3 = C Factory code “T” on line 3, pin 3 = not internally connected

GND



GND

P/N

G Y W W

P/N

T Y W W

Power stage input voltage. Drain of high-side MOSFET

Power ground

Switch node of the power stage

Supply voltage for internal gate driver

ORDERING INFORMATION

PART NUMBER PACKAGE MARKING CODE

SiC532CD-T1-GE3 PowerPAK

MLP4535-22L SiC532 5 V PWM optimized

SiC532DB Reference board

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Document Number: 74770

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SiC532

= pin 1 indicator

P/N = part number code

= Siliconix logo

=ESD symbol

F = assembly factory code

Y = year code

WW = week code

LL = lot code

F Y W W

P/N

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PART MARKING INFORMATION

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT

Input voltage V

Control logic supply voltage V

Drive supply voltage V

Switch node (DC voltage)

Switch node (AC voltage)

BOOT voltage (DC voltage)

BOOT voltage (AC voltage)

BOOT to PHASE (DC voltage)

BOOT to PHASE (AC voltage)

All logic inputs and outputs (PWM and ZCD_EN#)

Max. operating junction temperature T

Storage temperature T

Electrostatic discharge protection

Note

• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability

(1)

The specification values indicated “AC” is V

(2)

The specification value indicates “AC voltage” is V

(3)

The specification value indicates “AC voltage” is V

(1)

(2)

(3)

Human body model, JESD22-A114 2000

Charged device model, JESD22-C101 1000

to P

SWH

, -8 V (< 20 ns, 10 μJ), min. and 35 V (< 50 ns), max.

GND

to P

BOOT

to V

BOOT

CIN

DRV

SWH

BOOT

BOOT- PHASE

stg

, 40 V (< 50 ns) max.

GND

, 8 V (< 50 ns) max.

PHASE

-0.3 to +28

-0.3 to +7

-0.3 to +28

-8 to +35

-0.3 to +7

-0.3 to +8

-0.3 to V

150

-40 to +125

-65 to +150

Vishay Siliconix

+ 0.3

CIN

°CAmbient temperature T

RECOMMENDED OPERATING RANGE

ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT

Input voltage (V

Drive supply voltage (V

Control logic supply voltage (V

BOOT to PHASE (V

Thermal resistance from junction to PCB - 5 -

Thermal resistance from junction to case - 2.5 -

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)4.5-24

) 4.555.5

DRV

BOOT-PHASE

) 4.555.5

CIN

, DC voltage) 4 4.5 5.5

°C/W

For technical questions, contact: [email protected]

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Vishay Siliconix

ELECTRICAL SPECIFICATIONS

(ZCD_EN# = 5 V, V

PARAMETER SYMBOL TEST CONDITION

POWER SUPPLY

Control logic supply current I

Drive supply current I

PS4 mode supply current I

BOOTSTRAP SUPPLY

Bootstrap diode forward voltage V

PWM CONTROL INPUT

Rising threshold V

Falling threshold V

Tri-state voltage V

Tri-state rising threshold V

Tri-state falling threshold V

Tri-state rising threshold hysteresis V

Tri-state falling threshold hysteresis V

PWM input current I

ZCD_EN# CONTROL INPUT

Rising threshold V

Falling threshold V

Tri-state voltage V

Tri-state rising threshold V

Tri-state falling threshold V

Tri-state rising threshold hysteresis V

Tri-state falling threshold hysteresis V

ZCD_EN# input current I

PS4 exit latency t

TIMING SPECIFICATIONS

Tri-state to GH/GL rising propagation delay

Tri-state hold-off time t

GH - turn off propagation delay t

GH - turn on propagation delay (dead time rising)

GL - turn off propagation delay t

GL - turn on propagation delay (dead time falling)

PWM minimum on-time T

PROTECTION

Under voltage lockout V

Under voltage lockout hysteresis V

Notes

(1)

Typical limits are established by characterization and are not production tested

(2)

Guaranteed by design

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= 12 V, V

DRV

and V

= 5 V, TA = 25 °C, unless otherwise stated)

CIN

LIMITS

MIN. TYP. MAX.

= FLOAT - 80 -

PWM

VCIN

VDRV

+ I

VCIN

VDRV

TH_PWM_R

TH_PWM_F

TRI

TRI_TH_R

TRI_TH_F

HYS_TRI_R

HYS_TRI_F

PWM

TH_ZCD_EN#_R

TH_ZCD_EN#_F

TRI_ZCD_EN#

TRI_ZCD_EN#_R

TRI_ZCD_EN#_F

HYS_TRI_ZCD#_R

HYS_TRI_ZCD#_F

ZCD_EN#

PS4EXIT

PD_TRI_R

TSHO

PD_OFF_GH

PD_ON_GH

PD_OFF_GL

PD_ON_GL

PWM_ON_MIN

UVLO

UVLO_HYST

= FLOAT, V

PWM

= 300 kHz, D = 0.1 - 300 -

fS = 300 kHz, D = 0.1 - 10 15

= 1 MHz, D = 0.1 - 20 -

= V

PWM

ZCD_EN#

= -10 °C to +100 °C

IF = 2 mA - - 0.65 V

= FLOAT - 2.5 -

PWM

= 5 V - - 350

PWM

= 0 V - - -350

PWM

= FLOAT - 2.5 -

ZCD_EN#

No load, see fig. 4

rising, on threshold - 3.4 3.9

CIN

falling, off threshold 2.4 2.9 -

CIN

= 0 V - 120 -

ZCD_EN#

= FLOAT,

-39μA

3.6 3.9 4.2

0.72 1 1.3

1.11.351.6

3.4 3.7 4

- 325 -

- 250 -

3.3 3.6 3.9

1.1 1.4 1.7

1.5 1.8 2.1

2.93.153.4

- 375 -

- 450 -

= 5 V - - 100

= 0 V - - -100

--5μs

-20-

- 150 -

-20-

30 - -

- 500 - mV

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SiC532

UNIT

μAV

μA

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DETAILED OPERATIONAL DESCRIPTION

PWM Input with Tri-state Function

The PWM input receives the PWM control signal from the VR controller IC. The PWM input is designed to be compatible with standard controllers using two state logic (H and L) and advanced controllers that incorporate tri-state logic (H, L, and tri-state) on the PWM output. For two state logic, the PWM input operates as follows. When PWM is driven above V

PWM_TH_R

turned on. When PWM input is driven below V high-side is turned off and the low-side is turned on. For tri-state logic, the PWM input operates as previously stated for driving the MOSFETs when PWM is logic high and logic low. However, there is a third state that is entered as the PWM output of tri-state compatible controller enters its high impedance state during shut-down. The high impedance state of the controller’s PWM output allows the SiC532 to pull the PWM input into the tri-state region (see definition of PWM logic and tri-state, fig. 4). If the PWM input stays in this region for the tri-state hold-off period, t and low-side MOSFETs are turned off. The function allows the VR phase to be disabled without negative output voltage swing caused by inductor ringing and saves a Schottky diode clamp. The PWM and tri-state regions are separated by hysteresis to prevent false triggering. The SiC532 incorporates PWM voltage thresholds that are compatible with 5 V logic.

Diode Emulation Mode and PS4 Mode (ZCD_EN#)

The ZCD_EN# pin enables or disables diode emulation mode. When ZCD_EN# is driven below V emulation is allowed. When ZCD_EN# is driven above V

TH_ZCD_EN#_R

Diode emulation mode allows for higher converter efficiency under light load situations. With diode emulation active, the SiC532 will detect the zero current crossing of the output inductor and turn off the low-side MOSFET. This ensures that discontinuous conduction mode (DCM) is achieved. Diode emulation is asynchronous to the PWM signal, therefore, the SiC532 will respond to the ZCD_EN# input immediately after it changes state.

The ZCD_EN# pin can be floated resulting in a high impedance state. High impedance on the input of ZCD_EN# combined with a tri-stated PWM output will shut down the SiC532, reducing current consumption to typically 5 μA. This is an important feature in achieving the low standby current requirements required in the PS4 state in ultrabooks and notebooks.

Voltage Input (V

This is the power input to the drain of the high-side power MOSFET. This pin is connected to the high power intermediate BUS rail.

   

the low-side is turned off and the high-side is

PWM_TH_F

, both high-side

TSHO

TH_ZCD_EN#_F

the

, diode

, continuous conduction mode is forced.

)

SiC532

Vishay Siliconix

Switch Node (V

The switch node, V This is the output applied to the power inductor and output filter to deliver the output for the buck converter. The PHASE pin is internally connected to the switch node, V is to be used exclusively as the return pin for the BOOT capacitor.

Ground Connections (C

(power ground) should be externally connected to

GND

(control signal ground). The layout of the printed circuit

GND

board should be such that the inductance separating C and P

is minimized. Transient differences due to

GND

inductance effects between these two pins should not exceed 0.5 V.

Control and Drive Supply Voltage Input (V

is the bias supply for the gate drive control IC. V

CIN

the bias supply for the gate drivers. It is recommended to separate these pins through a resistor. This creates a low pass filtering effect to avoid coupling of high frequency gate drive noise into the IC.

Bootstrap Circuit (BOOT)

The internal bootstrap diode and an external bootstrap capacitor form a charge pump that supplies voltage to the BOOT pin. An integrated bootstrap diode is incorporated so that only an external capacitor is necessary to complete the bootstrap circuit. Connect a boot strap capacitor with one leg tied to BOOT pin and the other tied to PHASE pin.

Shoot-through Protection and Adaptive Dead Time

The SiC532 has an internal adaptive logic to avoid shoot through and optimize dead time. The shoot through protection ensures that both high-side and low-side MOSFETs are not turned on at the same time. The adaptive dead time control operates as follows. The high-side and low-side gate voltages are monitored to prevent the MOSFET turning on from tuning on until the other MOSFET’s gate voltage is sufficiently low (< 1 V). Built in delays also ensure that one power MOSFET is completely off, before the other can be turned on. This feature helps to adjust dead time as gate transitions change with respect to output current and temperature.

Under Voltage Lockout (UVLO)

During the start up cycle, the UVLO disables the gate drive, holding high-side and low-side MOSFET gates low, until the supply voltage rail has reached a point at which the logic circuitry can be safely activated. The SiC532 also incorporates logic to clamp the gate drive signals to zero when the UVLO falling edge triggers the shutdown of the device.

and PHASE)

SWH

, is the circuit power stage output.

SWH

GND

and P

GND

. This pin

SWH

)

GND

, V

CIN

)

DRV

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ZCD_EN#

SWH

UVLO

CIN

PWM logic

control &

state

machine

Anti-cross

conduction

control

logic

BOOT

PWM

GND

CIN

GND

PHASE

DRV

FUNCTIONAL BLOCK DIAGRAM

SiC532

Vishay Siliconix

Fig. 3 - SiC532 Functional Block Diagram

DEVICE TRUTH TABLE

ZCD_EN# PWM GH GL

Hi-Z (PS4 mode) X L L

LLL

LHHL

LHi-ZL L

HLLH

HHHL

HHi-ZL L

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H, I L, I

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> 0 A

< 0 A

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PWM TIMING DIAGRAM

TH_PWM_R

TH_PWM_F

PWM

PD_OFF_GL

TH_TRI_F

TH_TRI_R

PD_ON_GH

PD_OFF_GH

PD_ON_GL

TSHO

PD_TRI_R

SiC532

Vishay Siliconix

PD_TRI_R

TSHO

ZCD_EN# - PS4 EXIT TIMING

PWM

ZCD_EN#

Fig. 4 - Definition of PWM Logic and Tri-State

PS4EXIT

SWH

2.5 V

Fig. 5 - ZCD_EN# - PS4 Exit Timing

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0 5 10 15 20 25 30

Efciency (%)

Output Current, I

OUT

(A)

Complete converter efciency P

= [(VINx IIN) + 5 V x (I

VDRV

+ I

VCIN

)]

OUT

= V

OUT

x I

OUT

, measured at output capacitor

1MHz

750 kHz

500 kHz

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

200 300 400 500 600 700 800 900 1000 1100

Power Loss, P

(W)

Switching Frequency, fS (kHz)

OUT

= 25 A

0 5 10 15 20 25 30

Efciency (%)

Output Current, I

OUT

(A)

Complete converter efciency P

= [(VINx IIN) + 5 V x (I

VDRV

+ I

VCIN

)]

OUT

= V

OUT

x I

OUT

, measured at output capacitor

1 MHz

750 kHz

500 kHz

0 153045607590105120135150

Output Current, I

OUT

(A)

PCB Temperature, T

PCB

(°C)

1 MHz

500 kHz

0 5 10 15 20 25 30

Efciency (%)

Output Current, I

OUT

(A)

Complete converter efciency P

= [(VINx IIN) + 5 V x (I

VDRV

+ I

VCIN

)]

OUT

= V

OUT

x I

OUT

, measured at output capacitor

1 MHz

500 kHz

750 kHz

ELECTRICAL CHARACTERISTICS

Test condition: VIN = 13 V, V (All power loss and normalized power loss curves show SiC532 losses only unless otherwise stated)

DRV

= V

= 5 V, ZCD_EN# = 5 V, V

CIN

OUT

= 1 V, L

= 250 nH, (DCR = 0.32 m), TA = 25 °C

OUT

SiC532

Vishay Siliconix

Fig. 6 - Efficiency vs. Output Current (V

= 12.6 V)

Fig. 7 - Power Loss vs. Switching Frequency (V

= 12.6 V)

Fig. 9 - Safe Operating Area (V

12.0

10.5

9.0

(W)

7.5

1 MHz

Power Loss, P

6.0

4.5 750 kHz

3.0

1.5

0.0

0 5 10 15 20 25 30

Output Current, I

OUT

(A)

Fig. 10 - Power Loss vs. Output Current (V

= 12.6 V)

500 kHz

= 12.6 V)

Fig. 8 - Efficiency vs. Output Current (V

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= 9 V)

Fig. 11 - Efficiency vs. Output Current (V

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= 19 V)

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2.6

2.8

3.0

3.2

3.4

3.6

3.8

4.0

4.2

-60 -40 -20 0 20 40 60 80 100 120 140

Control Logic Supply Voltage, V

CIN

(V)

Temperature (°C)

UVLO_FALLING

UVLO_RISING

-60 -40 -20 0 20 40 60 80 100 120 140

Driver

upply Current, I

VDRV

(mA)

Temperature (°C)

PWM

= 300 kHz

0.0

0.6

1.2

1.8

2.4

3.0

3.6

4.2

4.8

-60 -40 -20 0 20 40 60 80 100 120 140

ZCD_EN# Threshold Voltage, V

ZCD_EN#

(V)

Temperature (°C)

TRI_ZCD_EN#_R

TRI_ZCD_EN#_ F

TH_ZCD_EN#_R

TH_ZCD_EN#_F

ELECTRICAL CHARACTERISTICS

Test condition: VIN = 13 V, V (All power loss and normalized power loss curves show SiC532 losses only unless otherwise stated)

Fig. 12 - UVLO Threshold vs. Temperature

DRV

= V

= 5 V, ZCD_EN# = 5 V, V

CIN

OUT

= 1 V, L

= 250 nH, (DCR = 0.32 m), TA = 25 °C

OUT

1.8

1.6

PS4EXIT

1.4

1.2

1.0

0.8

0.6

Normalized PS4 Exit Latency, t

0.4

0.2

-60 -40 -20 0 20 40 60 80 100 120 140

Fig. 15 - PS4 Exit Latency vs. Temperature

SiC532

Vishay Siliconix

Temperature (°C)

0.80

0.75

(V)

0.70

0.65

0.60

0.55

0.50

0.45

BOOT Diode Forward Voltage, V

0.40

-60 -40 -20 0 20 40 60 80 100 120 140

Temperature (°C)

Fig. 13 - BOOT Diode Forward Voltage vs. Temperature

4.8

4.2

(V)

3.6

PWM

3.0

2.4

1.8

1.2

PWM Threshold Voltage, V

0.6

0.0

-60 -40 -20 0 20 40 60 80 100 120 140

Fig. 14 - PWM Threshold vs. Temperature

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TH_PWM_R

TRI_TH_F

TRI

Temperature (°C)

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IF= 2 mA

Fig. 16 - Driver Supply Current vs. Temperature

TRI_TH_R

TH_PWM_F

Fig. 17 - ZCD_EN# Threshold vs. Temperature

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GND

Plane

SWH

Snubber

GND

vcin

vdrv

GND

Cboot

Rboot

PCB LAYOUT RECOMMENDATIONS

Step 1: VIN / P

Planes and Decoupling

GND

VINPlane

SWH

Plane

GND

SiC532

Vishay Siliconix

/ V

Step 3: V

GND

CIN

Input Filter

DRV

1. Layout VIN and P

planes as shown above.

GND

2. Ceramic capacitors should be placed directly between VIN and P

, and close to the device for best

GND

decoupling effect.

3. Different values / packages of ceramic capacitors should be used to cover entire decoupling spectrum e.g. 1210, 0805, 0603, 0402.

4. Smaller capacitance values, placed closer to the device’s VIN pin(s), results in better high frequency noise absorbing.

Step 2: V

SWH

Plane

1. The V

CIN

/ V

input filter ceramic cap should be placed

DRV

as close as possible to the IC. It is recommended to connect two capacitors separately.

2. V

capacitor should be placed between pin 2 (V

CIN

and pin 3 (A

of driver IC) to achieve best noise

GND

filtering.

3. V

capacitor should be placed between pin 20

DRV

of driver IC) and pin 21 (V

GND

) to provide maximum

DRV

instantaneous driver current for low side MOSFET during switching cycle.

4. For connecting V

CIN

to A

, it is recommended to use

GND

a large plane to reduce parasitic inductance.



Step 4: BOOT Resistor and Capacitor Placement

CIN

)

1. Connect output inductor to IC with large plane to lower resistance.

2. V

plane also serves as a heat-sink for low-side

SWH

MOSFET. Make the plane wide and short to achieve the best thermal path.

1. The components need to be placed as close as possible to IC, directly between PHASE (pin 5) and BOOT (pin 4).

2. To reduce parasitic inductance, chip size 0402 can be used.

3. If a snubber network is required, place the components as shown above, the network can be placed at bottom.

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GND

SiC532

Vishay Siliconix

Step 5: Signal Routing

1. Route the PWM and ZCD_EN# signal traces out of the top left corner next to pin 1.

2. The PWM signal is an important signal, both signal and return traces should not cross any power nodes on any layer.

3. It is best to “shield” these traces from power switching nodes, e.g. V

, with a GND island to improve signal

SWH

integrity.

4. GL (pin 19) has been connected with GL pad (pin 24) internally.

Step 7: Ground Connection

GND

SWH

1. It is recommended to make a single connection between A

GND

and P

which can be made on the top layer.

GND

2. It is recommended to make the entire first inner layer (below top layer) the ground plane and separate them into A

GND

and P

GND

planes.

3. These ground planes provide shielding between noise sources on top layer and signal traces on bottom layer.

Step 6: Adding Thermal Relief Vias

GND

Plane

GND

VINPlane

1. Thermal relief vias can be added on the VIN and A pads to utilize inner layers for high-current and thermal dissipation.

2. To achieve better thermal performance, additional vias can be placed on VIN plane and P

3. V

pad is a noise source, it is not recommended to

SWH

GND

plane.

place vias on this pad.

4. 8 mil vias for pads and 10 mils vias for planes are the optimal via sizes. Vias on pad may drain solder during assembly and cause assembly issues. Consult with the assembly house for guidelines.

S20-0485-Rev. C, 29-Jun-2020

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [email protected]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SWH

GND

Document Number: 74770

Page 12

www.vishay.com

PRODUCT SUMMARY

Part number SiC532

Description 30 A power stage, 4.5 V

Input voltage min. (V) 4.5

Input voltage max. (V) 24

Continuous current rating max. (A) 30

Switch frequency max. (kHz) 2000

Enable (yes / no) No

Monitoring features -

Protection UVLO, THDN

Light load mode ZCD, PS4

Pulse-width modulation (V) 5

Package type PowerPAK MLP4535-22L

Package size (W, L, H) (mm) 4.5 x 3.5 x 0.75

Status code 2

Product type VRPower (DrMOS)

Applications Computer, industrial, networking

to 24 VIN, 5 V PWM with ZCD, PS4 mode

SiC532

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74770

S20-0485-Rev. C, 29-Jun-2020

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 74770

Page 13

www.vishay.com

1110

1719

8227

2021

11 10

17 19

8227

20 21

D2-1

D2-2D2-3

D2-4

E2-1

E2-2E2-3

E2-4

Pin 1 dot by marking

D1-1

E1-1

E1-2

D1-2

E1-4

E1-3

E1-5

0.1

0.08

MLP 4.5 x 3.5-22L BWL Case Outline

Package Information

Vishay Siliconix

Revision: 20-Oct-14

DIM.

(8)

MIN. NOM. MAX. MIN. NOM. MAX.

0.70 0.75 0.80 0.027 0.0029 0.031

MILLIMETERS INCHES

A1 0.00 - 0.05 0.000 - 0.002

A2 0.20 ref. 0.008 ref.

(4)

0.20 0.25 0.30 0.0078 0.0098 0.0110

D 4.50 BSC 0.177 BSC

e 0.50 BSC 0.019 BSC

E 3.50 BSC 0.137 BSC

L 0.35 0.40 0.45 0.013 0.015 0.017

(3)

22 22

D1-1 0.35 0.40 0.45 0.013 0.015 0.017

D1-2 0.15 0.20 0.25 0.005 0.007 0.009

D2-1 1.02 1.07 1.12 0.040 0.042 0.044

D2-2 1.02 1.07 1.12 0.040 0.042 0.044

D2-3 1.47 1.52 1.57 0.057 0.059 0.061

D2-4 0.25 0.30 0.35 0.009 0.011 0.013

E1-1 1.095 1.145 1.195 0.043 0.045 0.047

E1-2 2.67 2.72 2.77 0.105 0.107 0.109

E1-3 0.35 0.40 0.45 0.013 0.015 0.017

E1-4 1.85 1.90 1.95 0.072 0.074 0.076

E1-5 0.095 0.145 0.195 0.0037 0.0057 0.0076

E2-1 3.05 3.10 3.15 0.120 0.122 0.124

E2-2 1.065 1.115 1.165 0.0419 0.0438 0.0458

E2-3 0.695 0.745 0.795 0.027 0.029 0.031

E2-4 0.40 0.45 0.50 0.015 0.017 0.019

K1 0.40 BSC 0.015 BSC

K2 0.07 BSC 0.002 BSC

K3 0.05 BSC 0.001 BSC

K4 0.40 BSC 0.015 BSC

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [email protected]

Document Number: 67234

Page 14

Package Information

www.vishay.com

Notes

1. Use millimeters as the primary measurement

2. Dimensioning and tolerances conform to ASME Y14.5M. - 1994

3. N is the number of terminals,

Nd is the number of terminals in X-direction and

Ne is the number of terminals in Y-direction.

4. Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip

5. The pin #1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body

6. Exact shape and size of this feature is optional

7. Package warpage max. 0.08 mm

8. Applied only for terminals

T14-0626-Rev. A, 20-Oct-14 DWG: 6028

Vishay Siliconix

Revision: 20-Oct-14

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 67234

Page 15

PAD Patte rn

www.vishay.com

Vishay Siliconix

Recommended Land Pattern PowerPAK® MLP4535-22L

2.72

(E1-2)

1.15

(E1-1)

1.11

(E2-2)

0.75

(E2-3)

Package outline top view, transparent

(e)

0.5

(L)

0.4

(not bottom view)

4.5

(K1)

0.4

(K4)

0.4

(K3)

0.05

(E1-4)

(D2-3)

1.52

1.9

0.45

(E2-4)

0.4

(E1-3)

(D2-4)

0.3

(D2-1)

1.07

22 21 20 19 18 17

0.14

(D1-5)

(K2)

0.07

678 91011

(D2-2)

1.07

22 21 20 19 18 17

(D1-2)

(D1-1)

0.4

0.2

(b)

0.25

3.1

(E2-1)

3.5

0.3

0.75

3.5

0.5 x 4 = 2

0.75

0.3

3.05

0.29

0.37

0.29

0.21

0.3

0.75

0.45

0.75

Land pattern

1.16

= 1

0.36

0.29

4.5

0.3

2.05

0.1

0.5

0.55

0.8

0.30.4

0.25

0.3

1.61

0.5 x 2 = 1

0.5 x 3 = 1.5

22 21 20 19 18 17

0.74

1.2

0.37

0.9

678 91011

0.5 x 2

0.75

0.45

0.31

0.75

0.14 15

0.3

0.59

0.75

0.5 x 4 = 2

0.75

678 91011

All dimensions in millimeters

Revision: 05-Nov-14

Document Number: 66914

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Page 16

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.

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Revision: 01-Jan-2022

Document Number: 91000