Datasheet sib431ed Datasheet

New Product

P-Channel 20-V (D-S) MOSFET

SiB431EDK

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 20

0.080 at V

0.149 at V

DS(on)

GS

(Ω)

= - 4.5 V

= - 2.5 V

I

D

(A)

- 9

- 1.2

f, g

Qg (Typ.)

3.9 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• New Thermally Enhanced PowerPAK

®

Power MOSFET

®

SC-75 Package

- Small Footprint Area

• Typical ESD Protection 500 V

PowerPAK SC-75-6L-Single

• Compliant to RoHS Directive 2002/95/EC

S

APPLICATIONS

• Load Switch for Portable Devices

G

Lot Traceability and Date code

D

P-Channel MOSFET

D

6

5

1.60 mm

1

D

2

D

3

G

D

S

4

1.60 mm

Part # code

Ordering Information: SiB431EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

B H X

X X X

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

= 25 °C

T

C

T

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

C

T

= 25 °C

A

TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

TA = 25 °C T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

T

V

DS

V

GS

I

D

DM

I

S

P

D

, T

J

stg

- 20

± 12

g

- 9

- 8.1

a, b

- 4.4

a, b

- 3.5 12

g

- 9

a, b

- 2 13

8.4

a, b

2.4

a, b

1.6

- 55 to 150 260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State R

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (www.vishay.com/ppg?73257

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 105 °C/W. f. Based on T g. Package limited.

= 25 °C.

C

Document Number: 68882 S09-1500-Rev. B, 10-Aug-09

a, e

t ≤ 5 s

R

thJA

thJC

41 51

7.5 9.5

°C/W

). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

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1

New Product

SiB431EDK

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

= 0 V, VGS = ± 4.5 V

DS

V

DS

= - 20 V, V

DS

= - 20 V, V

V

GS

V

GS

≤ 5 V, V

DS

= - 4.5 V, ID = - 4.4 A

= - 2.5 V, ID = - 0.7 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 4.4 A

VDS = - 10 V, V

= - 10 V, V

V

DS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 4.4 A

GS

= - 4.5 V, ID = - 4.4 A

GS

f = 1 MHz 1.5 7.6 15 Ω

V

= - 10 V, RL = 2.8 Ω

DD

I

≅ - 3.5 A, V

D

V

DD

≅ - 3.5 A, V

I

D

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, RL = 2.8 Ω

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 3.5 A, V

GS

= 0 V

IF = - 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 25

3.4

mV/°C

- 0.6 - 1.5 V

- 2 mA

- 20 µA

- 1

- 10

- 12 A

0.066 0.080

0.120 0.149

8S

360

95

60

8.0 12

3.9 5.9

1.0

1.16

15 23

25 38

15 23

816

24

918

15 23

714

- 9

- 12

- 0.8 - 1.2 V

15 23 ns

69nC

8

7

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 68882

S09-1500-Rev. B, 10-Aug-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiB431EDK

Vishay Siliconix

1.2

0.8

I

(mA)

GSS

I

0.4

I

at 150 °C

GSS

0.0 0 3 6 9 12 15

VGS- Gate-to-Source Voltage (V)

GSS

Gate Source Voltage vs. Gate Current

12

VGS=5V thru 3 V

9

6

- Drain Current (A)I

D

3

at 25 °C

VGS=2.5V

VGS=2V

VGS=1.5V

- Drain Current (A)I

D

100

10

1

-1

10

(mA)

-2

GSS

10

I

-3

10

-4

10

-5

10

0 3 6 9 121518

VGS- Gate-to-Source Voltage (V)

I

GSS

at 150 °C

I

GSS

at 25 °C

Gate Source Voltage vs. Gate Current

2.0

1.6

1.2

0.8

0.4

TC= - 55 °C

TC= 25 °C

TC= 125 °C

0

012345

V

0.30

0.25

VGS=2.5V

0.20

0.15

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00 036912

On-Resistance vs. Drain Current and Gate Voltage

Document Number: 68882 S09-1500-Rev. B, 10-Aug-09

- Drain-to-Source Voltage (V)

DS

Output Characteristics

VGS=4.5V

ID- Drain Current (A)

VGS=1V

0.0

0.0 0.4 0.8 1.2 1.6 2.0

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

600

500

oss

C

iss

400

300

200

C - Capacitance (pF)

100

C

0

048 12 16 20

C

rss

VDS- Drain-to-Source Voltage (V)

Capacitance

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New Product

0

SiB431EDK

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

ID=4.4A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

02468

VDS=10V

VDS=16V

Qg- Total Gate Charge (nC)

Gate Charge

100

10

- Source Current (A)I

1

S

TJ= 150 °C

TJ= 25 °C

1.8

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

VGS=4.5V;ID=4.4A

VGS=2.5V;ID=0.7A

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

0.20

ID=4.4A

0.15

0.10

- On-Resistance (Ω)

DS(on)

0.05

R

TJ= 125 °C

TJ=25 °C

0.1

1.4

1.2

(V)V

1.0

GS(th)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 15

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0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD-Source-to-Drain Voltage (V)

Soure-Drain Diode Forward Voltage

ID= 250 µA

TJ- Temperature (°C)

Threshold Voltage

0.00 036912

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

20

15

10

Power (W)

5

0

0.001 0.01 0.1 1 10 100

Time (s)

Single Pulse Power, Junction-to-Ambient

Document Number: 68882

S09-1500-Rev. B, 10-Aug-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

SiB431EDK

Vishay Siliconix

- Drain Current (A)

D

I

12

9

Package Limited

6

3

Limited byR

10

1

- Drain Current (A)

D

I

0.1

0.01

0.1 1 10 100

> minimum VGSat which R

* V

GS

*

DS(on)

BVDSS Limited

VDS- Drain-to-Source Voltage (V)

DS(on)

Safe Operating Area, Junction-to-Ambient

16

12

8

Power (W)

4

100 µs

1ms

10 ms

100 ms

1s

10 s

DC

is specified

0

0 25 50 75 100 125 150

1.5

1.2

0.9

Power (W)

0.6

0.3

0.0 0 25 50 75 100 125 150

T

A

Power Junction-to-Ambient

Document Number: 68882 S09-1500-Rev. B, 10-Aug-09

- Case Temperature (°C)

T

C

Current Derating**

-Ambient Temperature (°C)

0

0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Junction-to-Case

** The power dissipation PD is based on T

= 150 °C, using

J(max)

junction-to-case thermal resistance, and is more useful in settling the

upper dissipation limit for cases where additional heatsinking is

used. It is used to determine the current rating, when this rating falls

below the package limit.

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New Product

SiB431EDK

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

0.05

0.02

-4

10

1

0.1

0.2

0.1

Single Pulse

Duty Cycle = 0.5

0.2

0.05

0.02

Single Pulse

Notes:

P

DM

t

1

t

2

t

100

thJA

1

t

2

(t)

= 80 °C/W

100010

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

-3

10

-2

10

-1

1

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.1

-4

10

-3

10

-2

10

-1

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68882

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.

Document Number: 68882

S09-1500-Rev. B, 10-Aug-09

Package Information

b

Vishay Siliconix

PowerPAK® SC75-6L

e

PIN1

PIN2

E1

D1

PIN6

PIN5 PIN4

BACKSIDE VIEW OF SINGLE

DA

K1

PIN3

D2

K2 K3K2

e

PIN1 PIN3

L

K4

E2

E1

E3

K

E

D1

K K

PIN6

K2

PIN5 PIN4

BACKSIDE VIEW OF DUAL

PIN2

K1

L

D1

E1

K2

Notes:

1. All dimensions are in millimeters

2. Package outline exclusive of mold flash and metal burr

3. Package outline inclusive of plating

A1

C

z

Z

DETAIL Z

SINGLE PAD DUAL PAD

DIM

MILLIMETERS INCHES MILLIMETERS INCHES

Min Nom Max Min Nom Max Min Nom Max Min Nom Max

A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032

A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002

b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013

C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021

D2 0.10 0.20 0.30 0.004 0.008 0.012

E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028

E2 0.20 0.25 0.30 0.008 0.010 0.012

E3 0.32 0.37 0.42 0.013 0.015 0.017

e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC

K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP

K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP

K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP

K3 0.255 TYP 0.010 TYP

K4 0.300 TYP 0.012 TYP

L 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014

T 0.03 0.08 0.13 0.001 0.003 0.005

ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935

Document Number: 73000 06-Aug-07

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RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single

1.250 (0.049)

0.250 (0.01)

Application Note 826

Vishay Siliconix

0.300 (0.012)

1.700 (0.067) 1.100

0.300 (0.012)

0.250 (0.01)

(0.043)

0.545 (0.021)

0.670 (0.026)

2.000 (0.079)

0.400 (0.016)

0.370 (0.015)

0.200 (0.008)

0.250 (0.01)

0.500 (0.02)

0.620 (0.024)

0.180 (0.007)

2.000 (0.079)

0.300 (0.012)

Dimensions in mm/(Inches)

Return to Index

Document Number: 70488 www.vishay.com Revision: 21-Jan-08 13

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1