Datasheet sib411dk Datasheet

P-Channel 20-V (D-S) MOSFET

SiB411DK

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.066 at V

- 20

0.094 at V

0.130 at V

(Ω)I

DS(on)

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

(A) Qg (Typ.)

D

a

- 9

a

6 nC

FEATURES

• Halogen-free

• TrenchFET

• New Thermally Enhanced PowerPAK SC-75 Package

- Small Footprint Area

®

Power MOSFET

®

RoHS

COMPLIANT

- Low On-Resistance

APPLICATIONS

PowerPAK SC-75-6L-Single

1

D

2

D

6

5

1.60 mm

D

S

4

G

S

1.60 mm

Marking Code

3

Part # code

Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

• Load Switch, PA Switch and Battery Switch for Portable Devices

S

G

B B X

X X X

Lot Traceability and Date code

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

= 25 °C

C

T

= 70 °C

C

TA = 25 °C TA = 70 °C

= 25 °C

T

C

TA = 25 °C T

= 25 °C

C

= 70 °C

T

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 20 ± 8

a

- 9

a

- 8.9

b, c

- 4.8

b, c

- 3.8

- 15

a

- 9

b, c

- 2 13

8.4

b, c

2.4

b, c

1.6

- 55 to 150 260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 74335 S-80515-Rev. C, 10-Mar-08

b, f

t ≤ 5 s

R

thJA

R

thJC

41 51

7.5 9.5

°C/W

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1

SiB411DK

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= - 20 V, V

DS

= - 20 V, V

V

GS

V

GS

V

GS

≤ 5 V, V

DS

= - 4.5 V, ID = - 3.3 A

= - 2.5 V, ID = - 2.8 A

= - 1.8 V, ID = - 0.77 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 3.3 A

VDS = - 10 V, V

V

= - 10 V, V

DS

= 0 V, f = 1 MHz

GS

= - 8 V, ID = - 4.5 A

GS

= - 4.5 V, ID = - 4.5 A

GS

f = 1 MHz 7.5 Ω

V

= - 10 V, RL = 2.1 Ω

DD

≅ - 4.8 A, V

I

D

V

≅ - 4.8 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 10 V, RL = 2.1 Ω

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 3.8 A, V

GS

= 0 V

IF = - 3.8 A, di/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 18

2.2

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

15 A

0.055 0.066

0.077 0.094

0.107 0.130

9.5 S

470

95

65

10 15

69

0.9

1.4

10 15

40 60

45 70

75 115

510

10 15

25 40

10 15

- 9

15

- 0.85 - 1.2 V

20 40 ns

10 20 nC

15

5

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 74335

S-80515-Rev. C, 10-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.20

1.6

SiB411DK

Vishay Siliconix

15

V

= 5 thru 3 V

GS

12

) A ( t n e r r u C n i a r D -

9

6

D

I

3

0

0.0 0.5 1.0 1.5 2.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

V

= 1.8 V

GS

0.15

e (Ω)cnatsiseR-nO

0.10

-

)no(SD

0.05

R

0.00 03691215

V

= 2.5 V

GS

V

= 4.5 V

GS

I

- Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

2.5 V

2 V

1.5 V

2.0

1.6

)A( tnerruC niarD -I

1.2

0.8

D

0.4

T C = 125 °C

0.0

0.0 0.3 0.6 0.9 1.2 1.5

- Gate-to-Source Voltage (V)

V

GS

25 °C

- 55 °C

Transfer Characteristics

800

700

600

)Fp( ec

500

na t

i

400

c apaC

300

C

200

100

0

048 12 16 20

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

8

) V (

e g a

t l o V e c

r u o S

- o t - e

t a G

-

SG

V

I D = 4.8 A

6

4

2

0

02468 10 12

Document Number: 74335 S-80515-Rev. C, 10-Mar-08

V

= 10 V

DS

V

= 16 V

GS

Qg - Total Gate Charge (nC)

Gate Charge

I D = 3.3 A

1.4

V

= 4.5 V, 2.5 V, 1.8 V

e c n

a t

)dezilam

s i s e R - n

r

O -

oN(

) n o ( S D

R

GS

1.2

1.0

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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3

SiB411DK

GS

20

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

)A( tnerru C ecruoS -

10

T J = 150 °C

1

S

I

0.1

0 0.2 0.6 0.8 1 1.20.4

VSD - Source-to-Drain Voltage (V)

Soure-Drain Diode Forward Voltage

0.9

0.

0.7

) V (

) h

t (

0.6

S G

V

0.5

0.4

I D = 250 µA

8

T J = 25 °C

0.20

(Ω) ecnatsiseR-nO ecruoS-ot-niarD -

0.17

0.14

0.11

0.08

)no(SD

R

0.05 012345

T

25 °C

J =

V

- Gate-to-Source Voltage (V)

T

J =

125 °C

On-Resistance vs. Gate-to-Source Voltage

15

10

Power (W)

5

0.3

- 50 - 25 0 25 50 75 100 125 150

T

- Temperature (°C)

J

Threshold Voltage

100

Limited by

10

1

- Drain Current (A) I

D

0.1

0.01

0.1 1 1 0 100

* V

R

DS(on)*

TA = 25 °C

Single Pulse

BVDSS limited

V

- Drain-to-Source Voltage (V)

DS

> minimum VGS at which R

GS

0

0.001 0.01 0.1 10

1

Pulse (s)

Single Pulse Power, Junction-to-Ambient

100 µs

1 ms

10 ms

100 ms 1 s

10 s DC

is specified

DS(on)

100

1000

Safe Operating Area, Junction-to-Case

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Document Number: 74335

S-80515-Rev. C, 10-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiB411DK

Vishay Siliconix

14

12

10

) A ( t n e r r u C n i a r D -

Package Limited

8

6

4

D

I

2

0

0 25 50 75 100 125 150

T C - Case Temperature (°C)

Current Derating*

15

12

9

r (W) ew

o P

6

3

0

25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 74335

www.vishay.com

S-80515-Rev. C, 10-Mar-08

5

SiB411DK

f

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.01

1

ective T ransient

Thermal Impedance

Normalized E

0.1

0.05

0.02

-4

10

Duty Cycle = 0.5

0.2

0.1

Single Pulse

0.05

0.02

Single Pulse

-3

10

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-2

10

-1

1 10 100010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

t

1

t

2

t

1

t

2

= 80 °C/W

thJA

(t)

thJA

100

0.1 10

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74335.

www.vishay.com 6

Document Number: 74335

S-80515-Rev. C, 10-Mar-08

Package Information

b

Vishay Siliconix

PowerPAK® SC75-6L

e

PIN1

PIN2

E1

D1

PIN6

PIN5 PIN4

BACKSIDE VIEW OF SINGLE

DA

K1

PIN3

D2

K2 K3K2

e

PIN1 PIN3

L

K4

E2

E1

E3

K

K K

E

D1

PIN6

K2

PIN5 PIN4

BACKSIDE VIEW OF DUAL

PIN2

K1

L

D1

E1

K2

Notes:

1. All dimensions are in millimeters

2. Package outline exclusive of mold flash and metal burr

3. Package outline inclusive of plating

A1

C

z

Z

DETAIL Z

SINGLE PAD DUAL PAD

DIM

MILLIMETERS INCHES MILLIMETERS INCHES

Min Nom Max Min Nom Max Min Nom Max Min Nom Max

A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032

A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002

b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013

C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021

D2 0.10 0.20 0.30 0.004 0.008 0.012

E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028

E2 0.20 0.25 0.30 0.008 0.010 0.012

E3 0.32 0.37 0.42 0.013 0.015 0.017

e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC

K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP

K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP

K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP

K3 0.255 TYP 0.010 TYP

K4 0.300 TYP 0.012 TYP

L 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014

T 0.03 0.08 0.13 0.001 0.003 0.005

ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935

Document Number: 73000 06-Aug-07

www.vishay.com

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RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single

1.250 (0.049)

0.250 (0.01)

Application Note 826

Vishay Siliconix

0.300 (0.012)

1.700 (0.067) 1.100

0.300 (0.012)

0.250 (0.01)

(0.043)

0.545 (0.021)

0.670 (0.026)

2.000 (0.079)

0.400 (0.016)

0.370 (0.015)

0.200 (0.008)

0.250 (0.01)

0.500 (0.02)

0.620 (0.024)

0.180 (0.007)

2.000 (0.079)

0.300 (0.012)

Dimensions in mm/(Inches)

Return to Index

Document Number: 70488 www.vishay.com Revision: 21-Jan-08 13

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1