Datasheet sib410dk Datasheet

New Product

N-Channel MOSFET

G

D

S

Marking Code

X X X

A H X

Lot Traceability and Date code

Part # code

N-Channel 30 V (D-S) MOSFET

SiB410DK

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.042 at V

30

0.046 at V

0.052 at V

PowerPAK SC-75-6L-Single

DS(on)

()

GS

= 4.5 V

= 2.5 V

= 1.8 V

a

I

(A)

D

Qg (Typ.)

9

5.7 nC

9

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• DC/DC Converters

• Boost Converters

1

D

2

D

3

D

6

D

5

1.60 mm

Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

4

G

S

1.60 mm

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T

TA = 25 °C

TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

T

TA = 25 °C

T

Maximum Power Dissipation

T

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

C

= 70 °C

C

= 25 °C

C

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

5.9

4.7

2.1

30

± 8

9

20

9

a

b, c

a

b, c

V

A

13

P

D

T

, T

J

stg

8.4

b, c

2.5

b, c

1.6

- 55 to 150

260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s

Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package limited, T b. Surface mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257

). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W.

Document Number: 67020 S10-2249-Rev. A, 04-Oct-10

R

thJA

R

thJC

41 51

7.5 9.5

°C/W

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1

New Product

SiB410DK

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

5 V, V

DS

V

4.5 V, ID = 3.8 A

GS

2.5 V, ID = 3.6 A

V

GS

V

1.8 V, ID = 2 A

GS

V

= 15 V, ID = 3.8 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 4.3 

DD

 3.5 A, V

V

= 15 V, RL = 4.3 

DD

 3.5 A, V

TC = 25 °C

IS = 3.5 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 8 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

0.4 1 V

= 0 V

10 A

31

- 2.7

mV/°C

± 100 nA

1

10

0.034 0.042

0.038 0.046

0.041 0.052

30 S

560

= 0 V, f = 1 MHz

GS

60

27

= 10 V, ID = 3.4 A

GS

10 15

5.7 8.6

= 4.5 V, ID = 3.4 A

GS

0.85

0.75

f = 1 MHz 0.6 3 6 

612

10 20

= 4.5 V, Rg = 1 

GEN

20 40

10 20

510

10 20

= 8 V, Rg = 1 

GEN

17 30

10 20

1.5

20

GS

0 V

0.8 1.2 V

15 30 ns

612nC

8

7

µA



pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 67020

S10-2249-Rev. A, 04-Oct-10

New Product

0.02

0.03

0.04

0.05

0.06

048121620

VGS=4.5V

VGS=1.8V

VGS=2.5V

R

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

0

2

4

6

8

0246810

ID=4.3A

VDS=15V

VDS=24V

VDS=7.5V

Qg - Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

ID=3.8A

VGS=1.8V

VGS=4.5V,VGS=2.5V

TJ - Junction Temperature (°C)

(Normalized)

R

DS(on)

- On-Resistance

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiB410DK

Vishay Siliconix

20

16

12

8

- Drain Current (A)

D

I

4

0

0 0.5 1.0 1.5 2.0 2.5 3.0

VGS=5Vthru2V

VGS=1V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

VGS=1.5V

VGS=0.5V

10

8

6

4

- Drain Current (A)

D

I

2

0

0 0.3 0.6 0.9 1.2 1.5

VGS - Gate-to-Source Voltage (V)

TC= 25 °C

TC= 125 °C

Transfer Characteristics

800

600

400

C

iss

TC= - 55 °C

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

C - Capacitance (pF)

200

C

oss

C

rss

0

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

Document Number: 67020 S10-2249-Rev. A, 04-Oct-10

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3

New Product

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 25 °C

TJ= 150 °C

VSD - Source-to-Drain Voltage (V)

I

S

- Source Current (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

- 50 - 25 0 25 50 75 100 125 150

ID= 250 μA

V

GS(th)

(V)

TJ - Temperature (°C)

0

0.02

0.04

0.06

0.08

0.10

012345

TJ=25 °C

TJ= 125 °C

ID=3.8A

R

DS(on)

- On-Resistance (Ω)

VGS - Gate-to-Source Voltage (V)

SiB410DK

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

www.vishay.com 4

20

15

10

Power (W)

5

0

0.001 0.01 0.1 10

100

Limited by R

10

1

- Drain Current (A)

D

I

0.1

TA=25 °C

Single Pulse

0.01

0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

> minimum VGS at which R

* V

GS

DS(on)

*

BVDSS Limited

DS(on)

Safe Operating Area, Junction-to-Ambient

On-Resistance vs. Gate-to-Source Voltage

1

Pulse (s)

100

Single Pulse Power

100 μs

1ms

10 ms

100 ms 1s,10s

DC

is specied

Document Number: 67020

S10-2249-Rev. A, 04-Oct-10

1000

New Product

0 25 50 75 100 125 150

Package Limited

TC - Case Temperature (°C)

I

D

- Drain Current (A)

0

3

6

9

12

15

0

3

6

9

12

15

25 50 75 100 125 150

T

C

- Case Temperature (°C)

r (W) ew

o P

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiB410DK

Vishay Siliconix

Current Derating*

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

Power Derating

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 67020 S10-2249-Rev. A, 04-Oct-10

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5

New Product

1

0.1

0.01

Normalized Effective Transient

Thermal Impedance

10

-3

10

-2

1 10 100010

-1

10

-4

100

Square Wave Pulse Duration (s)

Duty Cycle = 0.5

Single Pulse

0.1

0.2

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 105 °C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface Mounted

P

DM

10

-3

10

-2

10

-1

10

-4

1

0.1

Square Wave Pulse Duration (s)

Normalized Ef fective T ransient

Thermal Impedance

Duty Cycle = 0.5

Single Pulse

0.02

0.1

0.2

0.05

SiB410DK

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67020

.

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Document Number: 67020

S10-2249-Rev. A, 04-Oct-10

Package Information

b

Vishay Siliconix

PowerPAK® SC75-6L

e

PIN1

PIN2

E1

D1

PIN6

PIN5 PIN4

BACKSIDE VIEW OF SINGLE

DA

K1

PIN3

D2

K2 K3K2

e

PIN2

PIN1 PIN3

L

K4

E2

E1

E3

K

K K

E

D1

PIN6

K2

PIN5 PIN4

BACKSIDE VIEW OF DUAL

K1

L

D1

E1

K2

Notes:

1. All dimensions are in millimeters

2. Package outline exclusive of mold flash and metal burr

3. Package outline inclusive of plating

A1

C

z

Z

DETAIL Z

SINGLE PAD DUAL PAD

DIM

MILLIMETERS INCHES MILLIMETERS INCHES

Min Nom Max Min Nom Max Min Nom Max Min Nom Max

A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032

A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002

b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013

C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021

D2 0.10 0.20 0.30 0.004 0.008 0.012

E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067

E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028

E2 0.20 0.25 0.30 0.008 0.010 0.012

E3 0.32 0.37 0.42 0.013 0.015 0.017

e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC

K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP

K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP

K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP

K3 0.255 TYP 0.010 TYP

K4 0.300 TYP 0.012 TYP

L 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014

T 0.03 0.08 0.13 0.001 0.003 0.005

ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935

Document Number: 73000 06-Aug-07

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1

RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single

1.250 (0.049)

0.250 (0.01)

Application Note 826

Vishay Siliconix

0.300 (0.012)

1.700 (0.067) 1.100

0.300 (0.012)

0.250 (0.01)

(0.043)

0.545 (0.021)

0.670 (0.026)

2.000 (0.079)

0.400 (0.016)

0.370 (0.015)

0.200 (0.008)

0.250 (0.01)

0.500 (0.02)

0.620 (0.024)

0.180 (0.007)

2.000 (0.079)

0.300 (0.012)

Dimensions in mm/(Inches)

Return to Index

Document Number: 70488 www.vishay.com Revision: 21-Jan-08 13

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1