Datasheet sia429dj Datasheet

New Product

Thin PowerPAK SC-70-6L-Single

2.05 mm

2.05 mm

0.6 mm

6

5

4

D

D

S

3

2

1

G

D

D

S

Marking Code

X X X

B P X

Lot traceability
and Date code

Part # code

Ordering Information: SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel 20 V (D-S) MOSFET

SiA429DJT

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.0205 at V

- 20

0.027 at V

0.036 at V

0.060 at V

()I

DS(on)

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

= - 1.5 V

GS

(A) Qg (Typ.)

D

a

- 12

a

- 12

- 12

24.5 nC

a

- 4

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

• New Thermally Enhanced PowerPAK

®

Power MOSFET

®

SC-70 Package

- Small Footprint Area

- Ultra-Thin 0.6 mm height

- Low On-Resistance

• 100 % R

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

FEATURES

• Load Switch and Charger Switch for Portable Devices

• DC/DC Converter

G

P-Channel MOSFET

S

D

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C
TA = 70 °C

Pulsed Drain Current (t = 300 µs) I

T

= 25 °C

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

TA = 25 °C

= 25 °C

T

C

T

= 70 °C 12

C

= 25 °C

T

A

TA = 70 °C
Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

DS

GS

I

D

DM

I

S

P

D

, T

J

stg

- 20
± 8

a

- 12

a

- 12

b, c

- 10.6

b, c

- 8.5

- 30

a

- 12

b, c

- 2.9
19

b, c

3.5

b, c

2.2

- 55 to 150
260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain) Steady State

Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.

Document Number: 67038
S11-0649-Rev. B, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

b, f

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

This document is subject to change without notice.

t  5 s

R

thJA

R

thJC

28 36

5.3 6.5

°C/W

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New Product

SiA429DJT

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

V

DS

= - 20 V, V

DS

= - 20 V, V

DS

V

V

V

V

GS

- 5 V, V

= - 4.5 V, ID = - 6 A

GS

= - 2.5 V, ID = - 2 A

GS

= - 1.8 V, ID = - 2 A

GS

= - 1.5 V, ID = - 1 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 6 A

VDS = - 10 V, V

VDS = - 10 V, V

V

= - 10 V, V

DS

= 0 V, f = 1 MHz

GS

= - 8 V, ID = - 10 A

GS

= - 4.5 V, ID = - 10 A

GS

f = 1 MHz 1.3 6.3 13 

V

= - 10 V, RL = 1.2 

DD

 - 8.5 A, V

I

D

V

DD

 - 8.5 A, V

I

D

= - 4.5 V, Rg = 1 

GEN

= - 10 V, RL = 1.2 

= - 8 V, Rg = 1 

GEN

TC = 25 °C

IS = - 8.5 A, V

GS

= 0 V

IF = - 8.5 A, dI/dt = 100 A/µs, TJ = 25 °C

- 20 V

- 12

2.7

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 20 A

0.0170 0.0205

0.022 0.027

0.029 0.036

0.038 0.060

30 S

1750

270

240

41 62

24.5 37

2.4

6.7

22 35

25 40

70 105

25 40

10 15

10 15

80 120

25 40

- 12

- 30

- 0.8 - 1.2 V

35 60 ns

18 30 nC

13

22

µA



pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 67038

S11-0649-Rev. B, 11-Apr-11

New Product

0

5

10

15

20

25

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS=5Vthru2V

VGS=1V

VGS=1.5V

VDS - Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0 5 10 15 20 25 30

VGS=4.5V

VGS=1.5V

VGS=1.8V

VGS=2.5V

R

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

- Drain Current (A)

D

I

Output Characteristics

SiA429DJT

Vishay Siliconix

20

16

12

8

TC= 25 °C

4

TC= 125 °C

TC= - 55 °C

0

0.0 0.4 0.8 1.2 1.6 2.0

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

On-Resistance vs. Drain Current and Gate Voltage

8

ID=10A

6

VDS=10V

Document Number: 67038
S11-0649-Rev. B, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

- Gate-to-Source Voltage (V)

2

GS

V

0

0 1020304050

Qg - Total Gate Charge (nC)

VDS=5V

Gate Charge

3500

3000

2500

2000

1500

C - Capacitance (pF)

1000

1.65

1.45

VDS=16V

1.25

- On-Resistance

1.05

(Normalized)

DS(on)

R

0.85

0.65

This document is subject to change without notice.

C

iss

C

500

0

oss

C

rss

0 5 10 15 20

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS=4.5V;2.5V;ID=6A

VGS=1.8V;ID=6A

VGS=1.5V;ID=1A

- 50 - 25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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New Product

0.1

1

10

100

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 25 °C

TJ= 150 °C

VSD - Source-to-Drain Voltage (V)

I

S

- Source Current (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

- 50 - 25 0 25 50 75 100 125 150

ID= 250 μA

V

GS(th)

(V)

TJ - Temperature (°C)

100

1

0.1 1 10 100

0.01

10

0.1

TA=25 °C

Single Pulse

1s,10s

Limited by R

DS(on)

*

BVDSS Limited

1ms

100 μs

10 ms

DC

100 ms

VDS - Drain-to-Source Voltage (V)

* V

GS

> minimum VGS at which R

DS(on)

is specied

I

D

- Drain Current (A)

SiA429DJT

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.06

0.05

Soure-Drain Diode Forward Voltage

0.04

0.03

- On-Resistance (Ω)

DS(on)

R

ID=6A;TJ= 25 °C

0.02

0.01

ID=1A;TJ= 25 °C

012345

VGS - Gate-to-Source Voltage (V)

ID=1A;TJ= 125 °C

ID=6A;TJ= 125 °C

On-Resistance vs. Gate-to-Source Voltage

30

25

20

15

Power (W)

10

5

Threshold Voltage

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

10 10000.10.010.001 1001

Time (s)

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

Document Number: 67038

S11-0649-Rev. B, 11-Apr-11

This document is subject to change without notice.

New Product

0

5

10

15

20

25

30

0 255075100125150

Package Limited

TC - Case Temperature (°C)

I

D

- Drain Current (A)

0

5

10

15

20

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Dissipation (W)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiA429DJT

Vishay Siliconix

Current Derating*

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

Power Derating

limit.

Document Number: 67038
S11-0649-Rev. B, 11-Apr-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

5

This document is subject to change without notice.

New Product

10

-3

10

-2

1

10

100010

-1

10

-4

100

0.2

0.1

0.05

0.02

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1

0.1

0.01

Single Pulse

t

1

t

2

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 80 C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

4. Surface Mounted

Duty Cycle = 0.5

SiA429DJT

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1

Thermal Impedance

Normalized Effective Transient

0.1
10

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

-4

0.05

-3

10

-2

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

-1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67038

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

This document is subject to change without notice.

Document Number: 67038

S11-0649-Rev. B, 11-Apr-11

CASE OUTLINE for PowerPAK® SC70T

Package Information

Vishay Siliconix

Terminal #1

D

E

Topside View

C

A

Z

Side View

A1

Detail Z

A

b

Pin 3

L

K4E4 E3

D3

K

Pin 4

Z

Backside View of Single

e

Pin 1

Pin 2

D2

Pin 5

K1K2

Pin 6

E2

K3

b

Pin 3

L

E2

D2

Pin 4

K2

Backside View of Dual

Pin 2

Pin 5

K1

e

T

D2

Pin 6

SINGLE PAD DUAL PAD

DIM.

MILLIMETERS INCHES MILLIMETERS INCHES

MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX.

A 0.525 0.60 0.65 0.0206 0.024 0.026 0.525 0.60 0.65 0.0206 0.024 0.026

A1 0.00 - 0.05 0.00 - 0.002 0.00 - 0.05 0.00 - 0.002

b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D2 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D3 0.135 0.235 0.335 0.005 0.009 0.013

E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E2 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E3 0.345 0.395 0.445 0.014 0.016 0.018
E4 0.425 0.475 0.525 0.017 0.019 0.021

e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC

K 0.275 TYP. 0.011 TYP. 0.275 TYP. 0.011 TYP.
K1 0.400 TYP. 0.016 TYP. 0.320 TYP. 0.013 TYP.
K2 0.240 TYP. 0.009 TYP. 0.252 TYP. 0.010 TYP.
K3 0.225 TYP. 0.009 TYP.
K4 0.355 TYP. 0.014 TYP.

L 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015

T 0.05 0.10 0.15 0.002 0.004 0.006

ECN: C09-0671-Rev. A, 07-Sep-09
DWG: 5994

Notes

1. All dimensions are in millimeter. Millimeters will govern.

2. Package outline exculsive of mold flash and metal burr.

3. Package outline inclusive of plating

Pin 1

K

E2

K

K2

Document Number: 65370 www.vishay.com
07-Sep-09 1

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Revision: 11-Mar-11 1