Datasheet sia421dj Datasheet

P-Channel 30 V (D-S) MOSFET

S

G

D

P-Channel MOSFET

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

G

S

2.05 mm

Marking Code

X X X

B J X

Lot Traceability and Date code

Part # code

Ordering Information:

SiA421DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

SiA421DJ

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 30

0.035 at V

0.056 at V

()I

DS(on)

= - 10 V

GS

= - 4.5 V

GS

(A) Qg (Typ.)

D

a

- 12

10 nC

a

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• New Thermally Enhanced PowerPAK

®

Power MOSFET

®

SC-70 Package

- Small Footprint Area

- Low On-Resistance

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

• Buck Converter

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

= 25 °C

C

T

= 70 °C

C

TA = 25 °C TA = 70 °C

T

= 25 °C

C

TA = 25 °C T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

- 30

± 20

- 12

- 7.9

- 6.3

- 35

- 12

- 2.9

b, c

V

a

A

a

19

P

D

T

, T

J

stg

12

b, c

3.5

b, c

2.2

- 55 to 150 260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W.

Document Number: 73975 S10-2546-Rev. D, 08-Nov-10

b, f

t  5 s

R

thJA

R

thJC

28 36

5.3 6.5

°C/W

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

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1

SiA421DJ

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= - 30 V, V

DS

= - 30 V, V

DS

V

GS

V

GS

- 5 V, V

= - 10 V, ID = - 5.3 A

= - 4.5 V, ID = - 4.2 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 15 V, ID = - 5.3 A

VDS = - 15 V, V

V

= - 15 V, V

DS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 7.9 A

GS

= - 4.5 V, ID = - 7.9 A

GS

f = 1 MHz 1.2 6.5 13 

V

= - 15 V, RL = 2.4 

DD

 - 6.3 A, V

I

D

V

 - 6.3 A, V

I

D

DD

= - 4.5 V, Rg = 1 

GEN

= - 15 V, RL = 2.4 

= - 10 V, Rg = 1 

GEN

TC = 25 °C

IS = - 6.3 A, V

GS

= 0 V

IF = - 6.3 A, dI/dt = 100 A/µs, TJ = 25 °C

- 30 V

- 31

4

mV/°C

- 1.5 - 3 V

± 100 nA

- 1

- 10

- 20 A

0.029 0.035

0.046 0.056

15 S

950

150

120

19 29

10 15

3

4.5

40 60

110 165

25 40

12 20

10 15

12 20

30 45

10 15

- 12

35

- 0.8 - 1.2 V

20 30 ns

15 30 nC

12

8

µA



pFOutput Capacitance

nC

ns

A

ns

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Document Number: 73975

S10-2546-Rev. D, 08-Nov-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

5

10

15

20

25

30

35

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

- Drain Current (A)I

D

VGS = 3 V

VGS = 4 V

C

rss

VDS - Drain-to-Source Voltage (V)

0

300

600

900

1200

1500

0 5 10 15 20 25 30

C

oss

C

iss

C - Capacitance (pF)

SiA421DJ

Vishay Siliconix

10

8

6

Output Characteristics

0.12

0.10

0.08

0.06

- On-Resistance (Ω)R

0.04

DS(on)

0.02

0

0 5 10 15 20 25 30 35

VGS = 4.5 V

ID - Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

VGS = 10 V

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

Transfer Characteristics

Capacitance

TC = - 55 °C

10

ID = 7.9 A

8

6

Document Number: 73975 S10-2546-Rev. D, 08-Nov-10

4

- Gate-to-Source Voltage (V)V

2

GS

0

0 5 10 15 20

Qg - Total Gate Charge (nC)

VDS = 15 V

Gate Charge

VDS = 24 V

1.6

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

ID = 5.3 A

VGS = 10 V, 4.5 V

TJ- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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3

SiA421DJ

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ = 150 °C

10

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

1

TJ = 25 °C

100

VGS - Gate-to-Source Voltage (V)

0

0.02

0.04

0.06

0.08

0.10

0.12

02468 10

- On-Resistance (Ω)R

DS(on)

125 °C

25 °C

ID = 5.3 A

1

0.1 1 10 100

0.01

10

1 ms

- Drain Current (A)I

D

0.1

TA = 25 °C

Single Pulse

10 ms

DC

V

DS

- Drain-to-Source Voltage (V)

* V

GS

minimum VGS at which R

DS(on)

is specified

100 µs

BVDSS Limited

100

100 ms 1 s 10 s

Limited by R

DS(on)*

IDMLimited

I

D(on)

Limited

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Soure-Drain Diode Forward Voltage

2.4

2.2

ID = 250 µA

2.0

(V)V

GS(th)

1.8

1.6

1.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

30

25

20

15

Power (W)

10

5

0

10 10000.10.010.001 1001

Time (s)

Single Pulse Power, Junction-to-Ambient

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Safe Operating Area, Junction-to-Ambient

Document Number: 73975

S10-2546-Rev. D, 08-Nov-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiA421DJ

Vishay Siliconix

25

20

- Drain Current (A)

D

I

15

10

Package Limited

5

0

0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

20

15

10

Power Dissipation (W)

5

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 73975 S10-2546-Rev. D, 08-Nov-10

www.vishay.com

5

SiA421DJ

10

-3

10

-2

1

10

100010

-1

10

-4

100

0.2

0.1

0.05

0.02

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1

0.1

0.01

Single Pulse

t

1

t

2

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 65 C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

4. Surface Mounted

Duty Cycle = 0.5

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1

Thermal Impedance

Normalized Effective Transient

0.1 10

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

-4

0.05

-3

10

-2

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

-1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73975

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Document Number: 73975

S10-2546-Rev. D, 08-Nov-10

.

Package Information

Vishay Siliconix

PowerPAK® SC70-6L

e b

PIN1

PIN2

E1

D1

PIN6 PIN5

K3

BACKSIDE VIEW OF SINGLE

b

PIN3

L

K4

E2

D2

PIN4

K1

D

E3

K

K2

E

K

E1

K

A

e

PIN2

PIN1

D1

PIN6 PIN5

K2

BACKSIDE VIEW OF DUAL

K1

Notes:

1. All dimensions are in millimeters

2. Package outline exclusive of mold flash and metal burr

3. Package outline inclusive of plating

D1

PIN3

L

E1

PIN4

K2

C

z

DETAIL Z

A1

Z

SINGLE PAD DUAL PAD

DIM

MILLIMETERS INCHES MILLIMETERS INCHES

Min Nom Max Min Nom Max Min Nom Max Min Nom Max

A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032

A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002

b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015

C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085

D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028

D2 0.135 0.235 0.335 0.005 0.009 0.013

E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085

E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041

E2 0.345 0.395 0.445 0.014 0.016 0.018

E3 0.425 0.475 0.525 0.017 0.019 0.021

e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC

K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP

K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP

K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP

K3 0.225 TYP 0.009 TYP

K4 0.355 TYP 0.014 TYP

L 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015

T 0.05 0.10 0.15 0.002 0.004 0.006

ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934

Document Number: 73001 06-Aug-07

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1

RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single

Application Note 826

Vishay Siliconix

2.200 (0.087)

0.350 (0.014)

0.300 (0.012)

(0.059)

1.500

1

0.650 (0.026)

0.350 (0.014)

0.275 (0.011)

0.550 (0.022)

0.475 (0.019)

0.870 (0.034)

0.235 (0.009)

0.355 (0.014)

0.300 (0.012)

0.950 (0.037)

Dimensions in mm/(Inches)

Return to Index

Document Number: 70486 www.vishay.com Revision: 21-Jan-08 11

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1