Datasheet sia413dj Datasheet

New Product

P-Channel 12-V (D-S) MOSFET

SiA413DJ

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.029 at V

- 12

0.034 at V

0.044 at V

0.10 at V

PowerPAK SC-70-6L-Single

D

6

D

5

2.05 mm

S

4

(Ω)I

DS(on)

= - 4.5 V

GS

= - 2.5 V

GS

= - 1.8 V

GS

= - 1.5 V

GS

1

2

D

3

G

S

2.05 mm

(A) Qg (Typ.)

D

a

- 12

a

- 12

23 nC

a

- 3

Marking Code

Part # code

Ordering Information:SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

B F X

X X X

FEATURES

• Halogen-free

• TrenchFET

• New Thermally Enhanced PowerPAK SC-70 Package

- Small Footprint Area

- Low On-Resistance

®

Power MOSFET

®

APPLICATIONS

• Load Switch, PA Switch and Battery Switch for Portable Devices

G

Lot Traceability and Date code

P-Channel MOSFET

S

D

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

= 25 °C

C

= 70 °C

T

C

TA = 25 °C TA = 70 °C

T

= 25 °C

C

TA = 25 °C T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

- 12 ± 8

- 12

- 10

- 8

- 40

- 12

- 2.9

b, c

V

a

b, c

A

a

b, c

19

P

D

T

, T

J

stg

12

b, c

3.5

b, c

2.2

- 55 to 150 260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W.

Document Number: 70447 S-80435-Rev. C, 03-Mar-08

b, f

t ≤ 5 s

R

thJA

R

thJC

28 36

5.3 6.5

°C/W

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1

New Product

SiA413DJ

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= - 12 V, V

DS

= - 12 V, V

DS

V

GS

V

GS

V

GS

V

GS

≤ - 5 V, V

= - 4.5 V, ID = - 6.7 A

= - 2.5 V, ID = - 6.2 A

= - 1.8 V, ID = - 2.3 A

= - 1.5 V, ID = - 1 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 6.7 A

VDS = - 10 V, V

VDS = - 6 V, V

V

= - 6 V, V

DS

= 0 V, f = 1 MHz

GS

= - 8 V, ID = - 10 A

GS

= - 4.5 V, ID = - 10 A

GS

f = 1 MHz 7 Ω

V

= - 6 V, RL = 0.75 Ω

DD

≅ - 8 A, V

I

D

V

≅ - 8 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 6 V, RL = 0.75 Ω

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 8 A, V

GS

= 0 V

IF = - 8 A, di/dt = 100 A/µs, TJ = 25 °C

- 12 V

- 11

2.7

mV/°C

- 0.4 - 1 V

± 100 nA

- 1

- 10

- 20 A

0.024 0.029

0.028 0.034

0.036 0.044

0.050 0.100

30 S

1800

450

390

38 57

23 35

3

6.5

20 30

40 60

65 100

40 60

10 15

12 20

70 105

40 60

- 12

40

- 0.8 - 1.2 V

40 60 ns

20 30 nC

14

26

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 70447

S-80435-Rev. C, 03-Mar-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiA413DJ

Vishay Siliconix

40

VGS = 5 thru 2.5 V

32

24

16

- Drain Current (A)I

D

8

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.08

0.07

0.06

0.05

VGS = 1.8 V

- On-Resistance (Ω)R

0.04

DS(on)

0.03

V

GS

= 2.5 V

V

= 2 V

GS

VGS = 1.5 V

V

= 1 V

GS

VGS = 4.5 V

10

8

6

4

- Drain Current (A)

D

I

2

0

0.0 0.3 0.6 0.9 1.2 1.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

Transfer Characteristics

3000

2500

2000

1500

1000

C - Capacitance (pF)

500

C

iss

C

rss

oss

TC = - 55 °C

0.02 0 8 16 24 32 40

On-Resistance vs. Drain Current and Gate Voltage

8

ID = 10 A

6

4

- Gate-to-Source Voltage (V) 2

GS

V

0

0 8 16 24 32 40

Document Number: 70447 S-80435-Rev. C, 03-Mar-08

ID - Drain Current (A)

VDS = 6 V

VDS = 9.6 V

Qg - Total Gate Charge (nC)

Gate Charge

0

036912

1.2

ID = 6.7 A

1.1

1.0

- On-Resistance (Normalized)

DS(on)

0.9

R

0.8

- 50 - 25 0 25 50 75 100 125 150

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V, 2.5 V

TJ- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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New Product

SiA413DJ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

TJ = 150 °C

10

- Source Current (A)I

S

1

0 0.2 0.4 0.6 0.8 1.0 1.2

V

- Source-to-Drain Voltage (V)

SD

Soure-Drain Diode Forward Voltage

0.8

0.7 ID = 250 µA

0.6

(V)V

0.5

GS(th)

0.4

TJ = 25 °C

0.060

ID = 6.7 A

0.048

0.036

- On-Resistance (Ω)R

DS(on)

0.024

0.012 012345

VGS - Gate-to-Source Voltage (V)

TA = 125 °C

TA = 25 °C

On-Resistance vs. Gate-to-Source Voltage

30

25

20

15

Power (W)

10

0.3

0.2

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

Limited by R

10

1

- Drain Current (A)I

D

0.01

TA = 25 °C

0.1 Single Pulse

0.1 1 10 100

* V

GS

Safe Operating Area, Junction-to-Ambient

DS(on)*

BVDSS Limited

- Drain-to-Source Voltage (V)

V

DS

minimum VGS at which R

DS(on)

5

0

10 10000.10.010.001 1001

Time (s)

Single Pulse Power, Junction-to-Ambient

100 µs

1 ms

10 ms

100 ms 1 s 10 s

DC

is specified

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Document Number: 70447

S-80435-Rev. C, 03-Mar-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiA413DJ

Vishay Siliconix

30

25

20

15

10

- Drain Current (A)

D

I

Package Limited

5

0

0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

20

15

10

Power Dissipation (W)

5

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 70447

www.vishay.com

S-80435-Rev. C, 03-Mar-08

5

New Product

SiA413DJ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

1

Thermal Impedance

Normalized Effective Transient

0.1

-4

10

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

10

0.05

-3

-2

10

-1

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Notes:

P

DM

t

1

t

2

t

100

thJA

t

1

2

= 65 C/W

(t)

100010

-1

10

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

10

-2

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70447.

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Document Number: 70447

S-80435-Rev. C, 03-Mar-08

Package Information

Vishay Siliconix

PowerPAK® SC70-6L

e b

PIN1

PIN2

E1

D1

PIN6 PIN5

K3

BACKSIDE VIEW OF SINGLE

D

K1

b

PIN3

D2

PIN4

K2

K4

E2

E3

K

e

PIN2

PIN1

L

K

E1

K

A

E

D1

PIN6 PIN5

K2

BACKSIDE VIEW OF DUAL

Notes:

1. All dimensions are in millimeters

2. Package outline exclusive of mold flash and metal burr

3. Package outline inclusive of plating

K1

D1

PIN3

L

E1

PIN4

K2

C

z

DETAIL Z

A1

Z

SINGLE PAD DUAL PAD

DIM

MILLIMETERS INCHES MILLIMETERS INCHES

Min Nom Max Min Nom Max Min Nom Max Min Nom Max

A 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032

A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002

b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015

C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010

D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085

D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028

D2 0.135 0.235 0.335 0.005 0.009 0.013

E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085

E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041

E2 0.345 0.395 0.445 0.014 0.016 0.018

E3 0.425 0.475 0.525 0.017 0.019 0.021

e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC

K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP

K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP

K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP

K3 0.225 TYP 0.009 TYP

K4 0.355 TYP 0.014 TYP

L 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015

T 0.05 0.10 0.15 0.002 0.004 0.006

ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934

Document Number: 73001 06-Aug-07

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RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single

Application Note 826

Vishay Siliconix

2.200 (0.087)

0.350 (0.014)

0.300 (0.012)

(0.059)

1.500

1

0.650 (0.026)

0.350 (0.014)

0.275 (0.011)

0.550 (0.022)

0.475 (0.019)

0.870 (0.034)

0.235 (0.009)

0.355 (0.014)

0.300 (0.012)

0.950 (0.037)

Dimensions in mm/(Inches)

Return to Index

Document Number: 70486 www.vishay.com Revision: 21-Jan-08 11

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1