Datasheet Si7686DP Datasheet (Vishay) [ru]

N-Channel 30-V (D-S) MOSFET

C

T

Si7686DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0095 at V

0.014 at V

DS(on)

(Ω)

GS

GS

= 10 V

= 4.5 V

PowerPAK SO-8

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: Si7686DP-T1-E3 (Lead (Pb)-free)
Si7686DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

4

a

I

(A)

D

35

35

G

Qg (Typ.)

9.2 nC

FEATURES

• Halogen-free available

• TrenchFET

• New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile

• Optimized for High-Side Synchronous Rectifier
Operation

• 100 % R

APPLICATIONS

• DC/DC Converters

®

Power MOSFET

Tested

g

D

G

S

N-Channel MOSFET

RoHS

®

OMPLIAN

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

= 25 °C

T

C

T

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C
TA = 70 °C

Pulsed Drain Current

T

= 25 °C

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current
Avalanche Energy

Maximum Power Dissipation

C

T

= 25 °C

A

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)

d, e

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

± 20

35
35

17.9

14.3

31.5

4.2

30

50

10

V

a

a

b, c

b, c

b, c

5

A

mJ

37.9

P

D

T

, T

J

stg

24.2

b, c

5

b, c

3.2

- 55 to 150
260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain) Steady State

Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.

Document Number: 73451
S-80440-Rev. C, 03-Mar-08

b, f

t ≤ 10 s

R

thJA

R

thJC

21 25

2.8 3.3

°C/W

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1

Si7686DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

V

DS

= 30 V, V

DS

= 30 V, V

V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 13.8 A

GS

= 4.5 V, ID = 11.4 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 13.8 A

VDS = 15 V, V

VDS = 15 V, V

V

= 15 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 13.8 A

GS

= 5 V, ID = 13.8 A

GS

f = 1 MHz 0.8 1.2 Ω

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

I

D

V

≅ 10 A, V

I

D

DD

= 4.5 V, Rg = 1 Ω

GEN

= 15 V, RL = 1.5 Ω

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 2.6 A

IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C

30 V

31.5

- 6

mV/°C

13V

± 100 nA

1

10

µA

50 A

0.0078 0.0095

0.011 0.014

Ω

56 S

1220

230

pFOutput Capacitance

98

17 26

9.2 14

4.1

nC

2.8

20 30

20 30

20 30

815

13 20

ns

16 25

23 35

815

31.5

50

A

0.8 1.2 V

25 50 ns

15 30 nC

12.5

12.5

ns

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2

Document Number: 73451

S-80440-Rev. C, 03-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si7686DP

Vishay Siliconix

50

40

30

- Drain Current (A)I

20

D

10

0

0.0 0.4 0.8 1.2 1.6 2.0

V

- Drain-to-Source Voltage (V)

DS

VGS = 10 thru 4 V

Output Characteristics

0.0140

0.0120

0.0100

VGS = 4.5 V

3 V

10

8

6

- Drain Current (A)I

4

D

TC = 125 °C

2

25 °C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1500

C

1200

900

iss

- 55 °C

VGS = 10 V

0.0080

- On-Resistance (mΩ)

DS(on)

R

0.0060

0.0040
0 1020304050

I

- Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 13.8 A

8

VDS = 15 V

- Gate-to-Source Voltage (V)

GS

V

6

4

2

0

0 4 8 12 16 20

Qg - Total Gate Charge (nC)

VDS = 21 V

Gate Charge

600

C - Capacitance (pF)

300

0

0 5 10 15 20 25 30

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8

ID = 13.8 A

1.6

1.4

1.2

- On-Resistance
(Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

VGS = 10 V

On-Resistance vs. Junction Temperature

VGS = 4.5 V

Document Number: 73451
S-80440-Rev. C, 03-Mar-08

www.vishay.com

3

Si7686DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

TJ = 150 °C

10

- Source Current (A)I

S

1

0.00 0.2 0.4 0.6 0.8

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.6

2.4

2.2

2.0

(V)

GS(th)

V

1.8

1.6

ID = 250 µA

TJ = 25 °C

1.0 1.2

- Drain-to-Source On-Resistance (Ω)

DS(on)

R

Power (W)

0.030

ID = 13.8 A

0.025

0.020

0.015

0.010

0.005
345678910

TJ = 25 °C

- Gate-to-Source Voltage (V)

V

GS

TJ = 125 °C

On-Resistance vs. Gate-to-Source Voltage

50

40

30

20

1.4

1.2

1.0

- 50 - 25 0 25 50 75 100 125 150

T

- Temperature (°C)

J

Threshold Voltage

100

Limited by
R

DS(on)*

10

1

0.1

- Drain Current (A)I

D

0.01

0.001

0.1 1 10 100

TA = 25 °C

Single Pulse

> minimum VGS at which R

* V

GS

Safe Operating Area, Junction-to-Ambient

V

- Drain-to-Source Voltage (V)

DS

10

DS(on)

0

Time (s)

10 60010.10.01 100

Single Pulse Power, Junction-to-Ambient

1 ms

10 ms

100 ms

1 s
10 s

DC

is specified

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Document Number: 73451

S-80440-Rev. C, 03-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si7686DP

Vishay Siliconix

60

50

40

30

20

- Drain Current (A)

D

I

10

0

0 25 50 75 100 125 150

Package Limited

TC - Case Temperature (°C)

Current Derating*

40

35

30

25

20

Power (W)

15

10

5

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 73451
S-80440-Rev. C, 03-Mar-08

www.vishay.com

5

Si7686DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01
10

2

0.05

0.02

Single Pulse

-4

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Thermal Impedance

Normalized Effective Transient

Notes:

P

DM

t

1

t

2

t

thJA

thJA

t

1

2

= 70 °C/W

(t)

100

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

1 10 60010

0.1

Thermal Impedance

Normalized Effective Transient

0.01

1

Duty Cycle = 0.5

0.2

0.1

Single Pulse

-4

10

0.02

0.05

-3

10

-2

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

-1

110

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73451.

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6

Document Number: 73451

S-80440-Rev. C, 03-Mar-08

www.vishay.com

PowerPAK® SO-8, (Single/Dual)

Package Information

Vishay Siliconix

L

K

E4

1

2

D5

3

b

4

L

K

E4

1

2

D5

K1

3

b

4

W

1

2

3

4

θ

c

Notes

1.
2

3.

2

E1

E

Inch will govern.
Dimensions exclusive of mold gate burrs.
Dimensions exclusive of mold flash and cutting burrs.

M

e

L1

θ

A

H

θ

Z

2

D

D1

θ

A1

Detail Z

D4

D2

Backside View of Single Pad

H

D4

D3 (2x)

D2

Backside View of Dual Pad

E2

D

E3

E2

D1

D2

E3

MILLIMETERS INCHES

DIM. MIN. NOM. MAX. MIN. NOM. MAX.

A 0.97 1.04 1.12 0.038 0.041 0.044

A1 - 0.05 0 - 0.002

b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013

D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4 0.57 typ. 0.0225 typ.
D5 3.98 typ. 0.157 typ.

E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236

E2 (for AL product) 3.30 3.48 3.66 0.130 0.137 0.144

E2 (for other product) 3.48 3.66 3.84 0.137 0.144 0.151

E3 3.68 3.78 3.91 0.145 0.149 0.154

E4 (for AL product) 0.58 typ. 0.023 typ.

E4 (for other product) 0.75 typ. 0.030 typ.

e 1.27 BSC 0.050 BSC

K (for AL product) 1.45 typ. 0.057 typ.

K (for other product) 1.27 typ. 0.050 typ.

K1 0.56 - - 0.022 - -

H 0.51 0.61 0.71 0.020 0.024 0.028

L 0.51 0.61 0.71 0.020 0.024 0.028

L1 0.06 0.13 0.20 0.002 0.005 0.008

 0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.

ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881

Revison: 20-May-13

1

Document Number: 71655

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

0.260

(6.61)

0.150

(3.81)

0.024
(0.61)

Application Note 826

Vishay Siliconix

Return to Index

Return to Index

0.026
(0.66)

0.050

(1.27)

0.050

(1.27)

0.032

(0.82)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.154

(3.91)

0.040

(1.02)

0.174

(4.42)

APPLICATION NOTE

Document Number: 72599 www.vishay.com
Revision: 21-Jan-08 15

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 02-Oct-12

1

Document Number: 91000