Datasheet SI6966DQ Datasheet (Fairchild Semiconductor)

SI6966DQ

Dual N-Channel 2.5V Specified PowerTrench



MOSFET

SI6966DQ

April 2001

General Description

This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been opt imized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

G

2

S

2

S

2

D

2

G

S

S

1

D

1

TSSOP-8

Pin 1

Features

• 5.5 A, 20 V. R
R

• Extended V

• Low gate charge

• High performance trench te chnology for extremely

low R

• Low profile TSSOP-8 package

1

1

DS(ON)

GSS

= 0.021 Ω @ VGS = 4.5 V

DS(ON)

= 0.035 Ω @ VGS = 2.5 V

DS(ON)

range (±12V) for battery applications

1
2
3
4

8
7
6
5

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage 20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 5.5 A
– Pulsed 30
PD Power Dissipation (Note 1a) 1.0 W

TJ, T

STG

Operating and Storage Junction Temperature Range -55 to +150

(Note 1b)

±12

0.6

V

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 125
(Note 1b)

208

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

6966 SI6966DQ 13’’ 12mm 3000 units

2001 Fairchild Semiconductor Corporation

SI6966DQ Rev A(W)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA

V

= 0 V, ID = 250 µA

GS

= 250 µA,Referenced to 25°C

I

D

20 V

14

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A

D(on)

V

= VGS, ID = 250 µA

DS

I

= 250 µA,Referenced to 25°C

D

= 4.5 V, ID = 5.5 A

V

GS

= 2.5 V, ID = 4.2 A

V

GS

= 4.5 V, ID = 5.5A, TJ=125°C

V

GS

0.6 0.8 1.5 V
–3.2

17
24
23

21
35
34

mV/°C

mΩ

gFS Forward Transconductance VDS = 5 V, ID = 5.5 A 26 S

Dynamic Characteristics

C

Input Capacitance 1082 pF

iss

C

Output Capacitance 277 pF

oss

C

Reverse Transfer Capacitance

rss

= 10 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

130 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 8 20 ns

d(on)

tr Turn–On Rise Time 8 27 ns
t

Turn–Off Delay Time 24 38 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 12 17 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge

= 10 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

= 10 V, ID = 5.5 A,

V

DS

V

= 4.5 V

GS

GEN

= 6 Ω

8 16 ns

3 nC

SI6966DQ

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 0.83 A
VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

a) R

is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.

θJA

b) R

is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4.

θJA

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 0.83 A (Note 2) 0.7 1.2 V

SI6966DQ Rev. A (W)

)

E

)

)

Typical Characteristics

SI6966DQ

30

VGS = 4.5V

25

20

15

10

, DRAIN CURRENT (A

D

I

5

0

3.5V

0 0.5 1 1.5 2 2.5 3

3.0V

2.5V

V

, DRAIN-SOURCE VOLTAGE (V)

DS

2.0V

2.5

2

VGS = 2.0V

1.5

, NORMALIZED

DS(ON)

1

R

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25 30

2.5V

3.0V

3.5V

, DRAIN CURRENT (A)

I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = 5.5A

= 4.5V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.07

0.06

0.05

0.04

0.03

, ON-RESISTANCE (OHM)

0.02

DS(ON)

R

0.01

0

12345

TA = 25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA =

4.0V

4.5V

ID = 2.8 A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = 5V

25

20

15

10

, DRAIN CURRENT (A

D

I

5

0

0.511.522.53

V

GS

TA = -55oC

125oC

, GATE TO SOURCE VOLTAGE (V)

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

SI6966DQ Rev. A (W)

)

)

Typical Characteristics

SI6966DQ

5

ID = 5.5A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

V

0

02468101214

, GATE CHARGE (nC)

Q

g

VDS = 5V

10V

15V

1800

1500

C

1200

900

600

CAPACITANCE (pF)

300

0

0 4 8 12 16 20

ISS

C

OSS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

C

RSS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1

VGS = 4.5V

SINGLE PULSE

, DRAIN CURRENT (A

0.1

D

I

0.01

= 208oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

V

DS

1s

10s

DC

1ms

10ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

f = 1MHz

= 0 V

V

GS

SINGLE PULSE
R

= 208°C/W

θ

JA

= 25°C

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

t

, TIME (sec)

1

R

(t) = r(t) + R

θJA

R

= 208 °C/W

θJA

P(pk

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

θJA

(t)

θJA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

SI6966DQ Rev. A (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™

PACMAN™
POP™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
St ar* Power™
Stealth™



SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H1