Datasheet si6926aedq Datasheet

Si6926AEDQ

Vishay Siliconix

Dual N-Channel 2.5-V (G-S) Input Protected Load Switch

PRODUCT SUMMARY

VDS (V) R

0.030 at V

20

0.033 at V

0.035 at V

(Ω)I

DS(on)

= 4.5 V

GS

= 3.0 V

GS

= 2.5 V

GS

(A) Qg (Typ.)

D

4.5

4.2

3.9

7.6

DESCRIPTION

The Si6926AEDQ is a dual N-Channel MOSFET with ESD
protection and gate over-voltage protection circuitry
incorporated into the MOSFET. The device is designed for
use in Lithium Ion battery pack circuits. The 2-stage input
protection circuit is a unique design, consisting of two stages
of back-to-back zener diodes separated by a resistor. The
first stage diode is designed to absorb most of the ESD
energy. The second stage diode is designed to protect the
gate from any remaining ESD energy and over-voltages

APPLICATION CIRCUITS

FEATURES

• Halogen-free

• Low R

•VGS Max Rating: 14 V

• Exceeds 2 kV ESD Protection

above the gates inherent safe operating range. The series
resistor used to limit the current through the second stage
diode during over voltage conditions has a maximum value
which limits the input current to ≤ 10 mA at 14 V and the
maximum t
optimized as a battery or load switch in Lithium Ion
applications with the advantage of both a 2.5 V R
and a safe 14 V gate-to-source maximum rating.

DS(on)

to 15 µs. The Si6926AEDQ has been

off

DS(on)

RoHS

COMPLIANT

rating

ESD and

Overvoltage

Protection

Battery Protection Circuit

Figure 1. Typical Use In a Lithium Ion Battery Pack

Document Number: 73090
S-81056-Rev. B, 12-May-08

ESD and

Overvoltage

Protection

D

G

S

*R typical value is 1.9 kΩ by design.

Gate-Current vs. Gate-Source Voltage, Page 3.

Figure 2. Input ESD and Overvoltage Protection Circuit

R*

See Typical Characteristics,

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Si6926AEDQ

Vishay Siliconix

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

D

1

TSSOP-8

D

1

1

S

2

1

S

3

1

G

4

1

Top View

Ordering Information: Si6926AEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

8

2

S

7

2

S

6

2

G

5

2

Figure 3.

1.8 kΩ

G

1

N-Channel N-Channel

S

G

1

Figure 4.

1.8 kΩ

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage, Source-Drain Voltage

Gate-Source Voltage

Continuous Drain-to-Source Current (T

= 150 °C)

J

a

Pulsed Drain-to-Source Current

Pulsed Source Current (Diode Conduction)

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

4.5 4.1

3.6 3.3

0.83 0.69

1.0 0.83

0.64 0.53

20

± 14

20

- 55 to 150 °C

D

2

S

2

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

Steady State 126 150

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on FR4 board.

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R

thJA

R

thJF

90 125

°C/W

65 80

Document Number: 73090

S-81056-Rev. B, 12-May-08

Si6926AEDQ

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

b

Total Gate Charge

Gate-Drain Charge

Tu r n - O n D el a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

b

R

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

V

V

DS

I

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 4.5 V

V

= 0 V, VGS = ± 12 V

DS

V

= 20 V, V

= 20 V, V

DS

DS

DS

V

= 4.5 V, ID = 4.5 A

GS

V

= 3.0 V, ID = 4.2 A

GS

V

= 2.5 V, ID = 3.9 A

GS

GS

= 0 V, TJ = 55 °C

GS

≥ 5 V, V

GS

VDS = 10 V, ID = 4.5 A

IS = 0.83 A, V

= 10 V, V

V

= 10 V, RL = 10 Ω

DD

≅ 1 A, V

D

GS

= 4.5 V, ID = 4.5 A

GS

= 4.5 V, Rg = 6 Ω

GEN

= 0 V

= 5 V

= 0 V

0.4 1.2 V

± 1 µA

± 10 mA

1

5

µA

10 A

0.023 0.030

0.025 0.033

0.027 0.035

26 S

0.65 1.1 V

7.6 12

1.5

nCGate-Source Charge

1.5

0.43 0.7

0.8 1.2

5.0 7.5

2.5 4.0

Ω

µs

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

15

12

9

6

- Gate Current (mA)I

GSS

3

0

0 3 6 9 12 15

Gate-Current vs. Gate-Source Voltage

Document Number: 73090
S-81056-Rev. B, 12-May-08

VGS - Gate-to-Source Voltage (V)

- Gate Current (A)I

GSS

100.000

10.000

1.000

100

10

1

0.1

0.01

0.001

04

Gate Current vs. Gate-Source Voltage

TJ = 150 °C

TJ = 25 °C

2681012

- Gate-to-Source Voltage (V)

V

GS

14

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3

Si6926AEDQ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- Drain Current (A)I

D

- On-Resistance (Ω)R

DS(on)

20

VGS = 5 thru 2 V

16

12

8

4

0

012345

- Drain-to-Source Voltage (V)

V

DS

1.5 V

Output Characteristics

0.05

0.04

VGS = 2.5 V

0.03

0.02

0.01

VGS = 3.0 V

VGS = 4.5 V

20

16

12

8

- Drain Current (A)I

D

4

0

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

TC = 125 °C

25 °C

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

6

VDS = 10 V
I

= 4.5 A

D

5

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

- 55 °C

0.00

0.0 4.0 8.0 12.0 16.0 20.0

1.6

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

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ID - Drain Current (A)

On-Resistance vs. Drain Current

VGS = 4.5 V

= 4.5 A

I

D

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

0

0246810

Qg - Total Gate Charge (nC)

Gate Charge

20

TJ = 150 °C

10

- Source Current (A)I

S

TJ = 25 °C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

Document Number: 73090

S-81056-Rev. B, 12-May-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si6926AEDQ

Vishay Siliconix

0.08

0.07

0.06

0.05

0.04

- On-Resistance (Ω)R

0.03

DS(on)

0.02

0.01

0.00

30

25

20

15

Power (W)

10

5

0
10

ID = 4.5 A

012345678

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

-3

-2

-1

Time (s)

1 600 1010

10010

Single Pulse Power, Junction-to-Ambient

0.2

0.1

ID = 250 µA

0.0

- 0.1

Variance (V)V

GS(th)

- 0.2

- 0.3

- 0.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

- Drain Current (A)I

D

0.01

Limited

by R

DS(on) *

10

1

I

D(on)

Limited

0.1
TA = 25 °C

Single Pulse

BV

DSS

Limited

0.1 1 10 100

- Drain-to-Source Voltage (V)

V

DS

>

* V

minimum VGS at which R

GS

DS(on)

Safe Operating Area, Junction-to-Case

I

Limited

DM

is specified

1 ms

10 ms

100 ms

1 s

10 s

DC

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

Single Pulse

0.01

-4

10

Document Number: 73090
S-81056-Rev. B, 12-May-08

-3

10

-2

10

-1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

t

1

t

2

= 126 °C/W

thJA

(t)

thJA

100

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Si6926AEDQ

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

0.01

Single Pulse

-4

10

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

11010

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73090.

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Document Number: 73090

S-81056-Rev. B, 12-May-08

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Revision: 11-Mar-11 1