Datasheet si5410du Datasheet

New Product

N-Channel 40-V (D-S) MOSFET

Si5410DU

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

40

0.018 at V

0.021 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

PowerPAK ChipFET Single

1

2

D

6

5

Bottom View

D

S

D

8

7

Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

3

4

G

a

I

(A)

D

12

AJ XXX

Part # Code

Qg (Typ.)

10 nC

Lot Traceability and Date Code

FEATURES

• Halogen-free

• TrenchFET

• New Thermally Enhanced PowerPAK ChipFET® Package

- Small Footprint Area

- Low On-Resistance

- Thin 0.8 mm Profile

• 100 % UIS Tested

®

Power MOSFET

APPLICATIONS

• Load Switch, PA Switch, and Battery Switch for Portable Applications

• DC-DC Synchronous Rectification

®

D

G

S

N-Channel MOSFET

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

T

= 25 °C

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C

TA = 70 °C

Pulsed Drain Current

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

V

DS

V

GS

I

D

I

DM

I

S

I

AS

P

D

, T

J

stg

40

± 20

a

12

a

12

b, c

9.8

b, c

7.9 30

a

12

b, c

2.6 19

18 mJ

31

20

b, c

3.1

b, c

2

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

Maximum Junction-to-Case (Drain)

t ≤ 5 s

Steady State

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W.

Document Number: 69827 S-81448-Rev. B, 23-Jun-08

R

thJA

R

thJC

34 40

34

°C/W

www.vishay.com

1

New Product

Si5410DU

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current I

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 40 V, V

DS

= 40 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 6.6 A

GS

V

= 4.5 V, ID = 6.1 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 6.6 A

VDS = 20 V, V

V

= 20 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 9.8 A

GS

= 4.5 V, ID = 9.8 A

GS

f = 1 MHz 3.5 Ω

V

= 20 V, RL = 2.5 Ω

DD

≅ 7.9 A, V

I

D

V

≅ 7.9 A, V

I

D

DD

= 4.5 V, Rg = 1 Ω

GEN

= 20 V, RL = 2.5 Ω

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 7.9 A, V

GS

= 0 V

IF = 7.9 A, dI/dt = 100 A/µs, TJ = 25 °C

40 V

45

- 7

mV/°C

1.2 3 V

± 100 nA

1

10

20 A

0.015 0.018

0.017 0.021

30 S

1350

150

70

21 32

10 15

4.5

nC

3.1

25 40

15 25

25 40

12 20

10 15

15 25

22 35

10 15

12

30

0.8 1.2 V

25 40 ns

22 35 nC

15

10

µA

Ω

pFOutput Capacitance

ns

A

ns

www.vishay.com 2

Document Number: 69827

S-81448-Rev. B, 23-Jun-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si5410DU

Vishay Siliconix

30

V

=10thru 4 V

GS

25

20

15

- Drain Current (A)I 10

D

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.025

0.022

0.019

0.016

- On-Resistance (Ω)R

DS(on)

0.013

VGS=4.5V

VGS=10V

10

TC= - 55 °C

8

6

4

- Drain Current (A)I

D

2

V

=3V

GS

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VGS-Gate-to-Source Voltage (V)

TC= 25 °C

TC= 125 °C

Transfer Characteristics

1800

C - Capacitance (pF)

1500

1200

900

600

300

C

oss

C

iss

0.010 0 5 10 15 20 25 30

On-Resistance vs. Drain Current and Gate Voltage

10

ID=9.8 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 5 10 15 20 25

Document Number: 69827 S-81448-Rev. B, 23-Jun-08

ID- Drain Current (A)

VDS=20V

VDS=32V

Qg- TotalGateCharge(nC)

Gate Charge

C

rss

0

0 5 10 15 20 25 30 35 40

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID=6.6A

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ- JunctionTemperature(°C)

VGS=10V

On-Resistance vs. Junction Temperature

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3

New Product

Si5410DU

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

SD

TJ= 150 °C

- Source-to-DrainVoltage(V)

Source-Drain Diode Forward Voltage

2.6

2.4

2.2

2.0

(V)V

1.8

GS(th)

1.6

ID= 250 µA

TJ= 25 °C

0.040

ID=6.6A

0.035

0.030

0.025

- On-Resistance (Ω)R

0.020

DS(on)

0.015

0.010

02468 10

VGS- Gate-to-Source Voltage (V)

TA= 125 °C

TA= 25 °C

On-Resistance vs. Gate-to-Source Voltage

50

40

)W(

30

rewoP

20

1.4

1.2

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)I

D

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

* V

GS

Safe Operating Area, Junction-to-Ambient

*

DS(on)

BVDSS Limited

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

DS(on)

10

0

1 10000.1 0.01 0.001 10 100

Time (s)

Single Pulse Power, Junction-to-Ambient

100 µs

1ms

10 ms

100 ms

1s 10 s

DC

is specified

www.vishay.com 4

Document Number: 69827

S-81448-Rev. B, 23-Jun-08

New Product

3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si5410DU

Vishay Siliconix

40

30

20

- Drain Current (A)

D

I

10

0

0 25 50 75 100 125 150

Package Limited

TC- Case Temperature (°C)

Current Derating*

5

30

)W( noitapissiD rewoP

25

20

15

10

5

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 69827 S-81448-Rev. B, 23-Jun-08

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5

New Product

1

Si5410DU

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

tneisnarT evitceffE dezilamroN

Duty Cycle = 0.5

ecnadepmI lamrehT

0.1

0.01

10

-4

0.2

0.1

0.05

0.02

10

-3

Single Pulse

10

Notes:

P

DM

t

1

t

2

t

DM Z thJA

100

1

t

2

= 75 °C/W

thJA

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- T A = P

JM

4. Surface Mounted

-2

-1

1 10 1000 10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

tneisnarT

ecnadepmI

ev i

tc e

ffE

l am

dez

r ehT

ilamroN

0.2

0.1

0.05

0.02

Single Pulse

0.1

10

-4

10

-3

10

-2

-1

1 10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69827.

www.vishay.com 6

Document Number: 69827

S-81448-Rev. B, 23-Jun-08

PowerPAK® ChipFET® SINGLE PAD

Z

D

E

C

A

b

e

H

E

2

D

2

K

L

K

1

E

3

D

3

A

1

S (5)D (6) D (7)D (8)

D (1) D (2) D (3) G (4)

D (2)D (1) D (3) G (4)

D (8) D (7) D (6) S (5)

DETAIL Z

Backside view of single pad

Package Information

Vishay Siliconix

MILLIMETERS INCHES

DIM. MIN. NOM. MAX. MIN. NOM. MAX.

A 0.70 0.75 0.85 0.028 0.030 0.033

A

1

0 - 0.05 0 - 0.002

b 0.25 0.30 0.35 0.010 0.012 0.014

C 0.15 0.20 0.25 0.006 0.008 0.010

D 2.92 3.00 3.08 0.115 0.118 0.121

D

2

D

3

E 1.82 1.90 1.98 0.072 0.075 0.078

E

2

E

3

e 0.65 BSC 0.026 BSC

1.75 1.87 2.00 0.069 0.074 0.079

0.20 0.25 0.30 0.008 0.010 0.012

1.38 1.50 1.63 0.054 0.059 0.064

0.45 0.50 0.55 0.018 0.020 0.022

H 0.15 0.20 0.25 0.006 0.008 0.010

K 0.25 - - 0.010 - -

K

Document Number: 73203 www.vishay.com

1

L 0.30 0.35 0.40 0.012 0.014 0.016

0.30 - - 0.012 - -

19-Jul-10 1

Package Information

Vishay Siliconix

PowerPAK® ChipFET® DUAL PAD

D

SI (1) GI (2) S2 (3) G2 (4)

Z

b

L

E

2

H

D1 (8)

Backside view of dual pad

SI (1)

D1 (7)

e

GI (2) S2 (3)

D2 (6) D2 (5)

K

1

S2 (5)D2 (6) D1 (7)D1 (8)

G2 (4)

E

A

C

A

1

K

DETAIL Z

MILLIMETERS INCHES

DIM. MIN. NOM. MAX. MIN. NOM. MAX.

A 0.70 0.75 0.85 0.028 0.030 0.033

A

1

0 - 0.05 0 - 0.002

b 0.25 0.30 0.35 0.010 0.012 0.014

C 0.15 0.20 0.25 0.006 0.008 0.010

D 2.92 3.00 3.08 0.115 0.118 0.121

D

2

1.07 1.20 1.32 0.042 0.047 0.052

E 1.82 1.90 1.98 0.072 0.075 0.078

E

2

0.92 1.05 1.17 0.036 0.041 0.046

e 0.65 BSC 0.026 BSC

H 0.15 0.20 0.25 0.006 0.008 0.010

K 0.20 - - 0.008 - -

K

1

0.20 - - 0.008 - -

L 0.30 0.35 0.40 0.012 0.014 0.016

ECN: C10-0618-Rev. C, 19-Jul-09 DWG: 5940

www.vishay.com Document Number: 73203 2 19-Jul-10

RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single

Application Note 826

Vishay Siliconix

(0.008)

1.900 (0.075)

0.200

1.500 (0.059)

0.225

(0.009)

0.650

(0.026)

1.870

(0.074)

0.300

(0.012)

(0.101)

0.350

(0.014)

0.300

(0.012)

0.100

(0.004)

0.250

(0.010)

0.500

(0.020)

0.350

(0.014)

0.350

(0.014)

0.305

(0.012)

2.575

Recommended Minimum Pads

Dimensions in mm/(Inches)

Return to Index

Document Number: 69948 www.vishay.com Revision: 21-Jan-08 9

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1