Datasheet SI4920DY Datasheet (Fairchild Semiconductor)

January 2001

Si4920DY
Dual N-Channel, Logic Level, PowerTrench

General Description Features

These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.

These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.



MOSFET

6 A, 30 V. R
R

= 0.028 Ω @ VGS = 10 V

DS(ON)

= 0.035 Ω @ VGS = 4.5 V.

DS(ON)

Fast switching speed.
Low gate charge (typical 9 nC).

High performance trench technology for extremely low
R

.

DS(ON)

High power and current handling capability.

SOT-23

SuperSOT

TM

-6

SuperSOT

TM

-8

SO-8 SOT-223

SOIC-16

D2

D2

5

4

D1

D1

4920

G2

6

7

3
2

S2

SO-8

pin1

S1

Absolute Maximum Ratings T

G1

= 25oC unless other wise noted

A

8

Symbol Parameter Si4920DY Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 6 A

- Pulsed 20

P

T

D

J,TSTG

Power Dissipation for Single Operation (Note 1a) 2 W

(Note 1b) 1.6
(Note 1c) 0.9

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

1

© 2001 Fairchild Semiconductor International

Si4920DY Rev.A

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

DSS

∆BV

DSS

I

DSS

I

GSSF

I

GSSR

ON CHARACTERISTICS

V

GS(th)

∆V

GS(th)

R

DS(ON)

Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

I

= 250 µA, Referenced to 25 oC

D

V

= 24 V, V

DS

= 0 V

GS

= 55°C

T

J

23

1 µA

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse

(Note 2)

V

= -20 V, V

GS

= 0 V

DS

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V
Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

I

= 250 µA, Referenced to 25 oC

D

V

= 10 V, I D = 6 A

GS

-4

0.023 0.028

mV /oC

10 µA

-100 nA

mV /oC

TJ =125°C 0.036 0.044

0.029 0.035

18 S

I
g

D(ON)

FS

= 4.5 V, I D = 5 A

V

GS

On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance

V

= 15 V, I D= 6 A

DS

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

SWITCHING CHARACTERISTICS

t

D(on)

t

r

t

D(off)

t

f

Q

g

Q

gs

Q

gd

Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 185 pF

f = 1.0 MHz

830 pF

Reverse Transfer Capacitance 80 pF

(Note 2)

Turn - On Delay Time
Turn - On Rise Time

V

= 15 V, I D = 1 A

DS

V

= 10 V , R

GS

GEN

= 6 Ω

6 12 ns

10 18 ns

Turn - Off Delay Time 18 29 ns
Turn - Off Fall Time 5 12 ns
Total Gate Charge VDS = 15 V, I D = 7.5 A, 9 13 nC
Gate-Source Charge

V

= 5 V

GS

2.8 nC

Gate-Drain Charge 3.1 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

Notes:

1. R

SD

JA

θ

design while R

Maximum Continuous Drain-Source Diode Forward Current 1.3 A
Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

V

= 0 V, IS = 1.3 A

GS

(Note 2)

0.73 1.2 V

is guaranteed by

JC

θ

Ω

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width <

300µs, Duty Cycle < 2.0%.

a. 78OC/W on a 0.5 in

pad of 2oz copper.

2

b. 125OC/W on a 0.02 in

pad of 2oz copper.

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

2

Si4920DY Rev.A

Typical Electrical Characteristics

40

V =10V

GS

5.5V

32

24

16

8

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4

4.5V

4.0V

3.5V

3.0V

2.5V

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

I = 6A

D

V = 10V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

5

V = 2.5V

GS

4

3

2

DS(ON)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0

0 6 12 18 24 30

3.0 V

3.5 V

I , DRAIN CURRENT (A)

D

4.5 V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.15

0.12

0.09

0.06

0.03

DS(ON)

R , ON-RESISTANCE (OHM)

0

0 2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

T = 125°C

A

25°C

I = 3A

D

10V

Figure 3. On-Resistance Variation with

Temperature.

25

V =5.0V

DS

20

15

10

D

I , DRAIN CURRENT (A)

5

0

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

T = -55°C

J

25°C

125°C

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

20

V = 0V

GS

T = 125°C

1

J

25°C

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

Si4920DYA Rev.A

Typical Electrical Characteristics

10

8

I = 6A

D

V = 5V

DS

15V

10V

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 3 6 9 12 15 18

Q , GATE CHARGE (nC)

g

Figure 7. Gate Charge Characteristics.

100

50

10

RDS(ON) LIMIT

2

0.5

V =10V

GS

SINGLE PULSE

D

I , DRAIN CURRENT (A)

R = 135°C/W

JA

θ

0.05

0.01

A

T = 25°C

A

0.1 0.5 1 2 5 10 30 50
V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

100us

1ms

10ms

100ms

1s

10s

1500

C

iss

500

200

100

CAPACITANCE (pF)

50

f = 1 MHz
V = 0 V

GS

0.1 0.2 0.5 1 2 5 10 30
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

oss

C

rss

Figure 8. Capacitance Characteristics.

30

25

20

15

POWER (W)

10

5

0

0.01 0.1 0.5 10 50100 300

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =135 °C/W

JA

θ

T = 25°C

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

1

D = 0.5

0.5

R (t) = r(t) * R

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.2

0.1

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)

1

JA

θ

R =135° C/W

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1c.

Transient thermal response will change depending on the circuit board design.

JA

θ

JA

θ

1 2

Si4920DY Rev.A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™

PowerTrench



QFET™
QS™
QT Optoelectronics™

Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8



SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G