Datasheet si4914bd Datasheet (Vishay)

Si4914BDY

e

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

Channel-1

Channel-2

VDS (V) R

0.021 at V

0.027 at V

30

0.020 at V

0.025 at V

DS(on)

(Ω)

GS

GS

GS

GS

= 10 V

= 4.5 V

= 10 V

= 4.5 V

I

(A)

D

8.4

7.4

d

8

d

8

SCHOTTKY PRODUCT SUMMARY

(V)

V

VDS (V)

Diode Forward Voltage

SD

a

Qg (Typ.)

I

F

6.7

7.0

(A)

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• LITTLE FOOT

• 100 % R

®

Plus Integrated Schottky

and UIS Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Notebook PC

- System Power dc-to-dc

D

1

30 0.50 V at 1.0 A 2.0

SO-8

D

1

1

D

2

1

G

3

2

S

4

2

T op V i e w

Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

8

1

S 1 /D

7

6

5

S 1 /D

S 1 /D

2

2

2

G

1

N-Channel 1

MOSFET

G

2

N-Channel 2

MOSFET

S1/D

2

Schottky Diod

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Channel-1 Channel-2 Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

PulseD Source-Drain Current

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s.
d. Package limited.

Document Number: 69654
S09-2109-Rev. E, 12-Oct-09

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

= 25 °C

T

A

L = 0.1 mH

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

8.4

I

D

6.7 7.4

6.7

5.3

I

DM

I

S

I

SM

I

AS

E

AS

40 40

2.4 2.8

1.0

40 40

2.7 3.1

P

D

1.7 2.0

1.7

1.1

, T

T

J

stg

30

20

d

8

b, c

b, c

b, c

7.4

5.7

1.1

b, c

b, c

b, c

15

11.2 mJ

b, c

b, c

2.0

1.2

b, c

b, c

- 55 to 150 °C

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V

A

W

1

Si4914BDY

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2

Parameter

Maximum Junction-to-Ambient

a

t ≤ 10 s

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

Static

Drain-Source Breakdown Voltage

Temperature Coefficient ΔVDS/T

V

DS

V

Temperature Coefficient ΔV

GS(th)

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

V

I

V

D(on)

b

R

DS(on)

g

fs

V

SD

Q

g

V

Q

gs

V

Q

gd

R

g

Symbol

R

thJA

R

thJF

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 30 V, V

DS

= 30 V, V

DS

DS

V

V

V

GS

V

GS

= 0 V, TJ = 85 °C

GS

= 5 V, V

GS

= 10 V, ID = 8 A

GS

= 10 V, ID = 8 A

GS

= 4.5 V, ID = 6 A

= 4.5 V, ID = 6 A

VDS = 15 V, ID = 8 A

V

= 15 V, ID = 8 A

DS

IS = 1.7 A, V

I

= 1 A, V

S

GS

GS

Channel-1

= 15 V, V

DS

= 4.5 V, ID = 8 A

GS

Channel-2

= 15 V, V

DS

= 4.5 V, ID = 8 A

GS

59 70 52 62.5

36 45 32 40

Ch-1 30

Ch-2 30

Ch-1 35 mV/°C

Ch-1 - 6.2

Ch-1 1.2 2.7

Ch-2 1.2 2.7

Ch-1 100

Ch-2 100

GS

= 0 V

Ch-1 1

Ch-2 100

Ch-1 15

Ch-2 10000

= 10 V

Ch-1 20

Ch-2 20

Ch-1 0.0165 0.021

Ch-2 0.0155 0.020

Ch-1 0.0215 0.027

Ch-2 0.020 0.025

Ch-1 29

Ch-2 33

= 0 V

= 0 V

Ch-1 0.77 1.1

Ch-2 0.46 0.5

Ch-1 6.7 10.5

Ch-2 7.0 11.0

Ch-1 2.8

Ch-2 2.8

Ch-1 2.0

Ch-2 2.0

Ch-1 2.9 6.0

Ch-2 2.0 4.0

a

Max. Unit

Unit Typ. Max. Typ. Max.

°C/W

V

V

nA

µA

A

Ω

S

V

nC

Ω

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2

Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

Dynamic

Tu r n - O n D el a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

a

t

d(on)

t

d(off)

Q

t

r

≅ 5 A, V

I

D

I

≅ 5 A, V

t

f

t

rr

D

Channel-1

V

= 15 V, RL = 3 Ω

DD

= 10 V, Rg = 1 Ω

GEN

Channel-2

V

= 15 V, RL = 3 Ω

DD

= 10 V, Rg = 1 Ω

GEN

IF = 2.2 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 A/µs

F

IF = 2.2 A, dI/dt = 100 A/µs

rr

t

a

t

b

I

= 2.2 A, dI/dt = 100 A/µs

F

IF = 2.2 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 A/µs

F

IF = 2.2 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 A/µs

F

Ch-1 9 18

Ch-2 10 20

Ch-1 10 20

Ch-2 9 18

Ch-1 16 32

Ch-2 16 32

Ch-1 9 18

Ch-2 8 16

Ch-1 35 55

Ch-2 21 35

Ch-1 40

Ch-2 11

Ch-1 19

Ch-2 11

Ch-1 16

Ch-2 10

Si4914BDY

Vishay Siliconix

a

Max. Unit

ns

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and fun ctional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Document Number: 69654
S09-2109-Rev. E, 12-Oct-09

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3

Si4914BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

40

30

20

- Drain Current (A)I

D

10

0

00.51.01.52.02.5

VDS- Drain-to-Source Voltage (V)

VGS=10V thru 5 V

4 V

3 V

Output Characteristics

0.05

0.04

0.03

VGS=4.5V

2.0

1.6

1.2

TC= 25 °C

0.8

- Drain Current (A)I

D

0.4

0

TC= 125 °C

TJ= - 55 °C

012345

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

1000

C

800

600

iss

0.02

- On-Resistance (Ω)R

DS(on)

0.01

0

0 1020304050

ID- Drain Current (A)

VGS=10V

On-Resistance vs. Drain Current

10

ID= 8 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 3.2 6.4 9.6 12.8 16.0

VDS=15V

Qg- Total Gate Charge (nC)

VDS=10V

VDS=20V

Gate Charge

400

C - Capacitance (pF)

200

C

rss

0

0 6 12 18 24 30

1.7

ID=7A

1.5

1.3

- On-Resistance

1.1

(Normalized)

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

VGS=10V

VGS=4.5V

TJ- Junction Temperature (°C)

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.10

Si4914BDY

Vishay Siliconix

10

1

0.1

- Source Current (A)I

S

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2

VSD- Source-to-Drain Voltage (V)

TJ= 150 °C

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.5

ID= 250 µA

0.2

ID=5mA

- 0.1

Variance (V)V

- 0.4

GS(th)

- On-Resistance (Ω)R

DS(on)

Power (W)

0.08

0.06

0.04

TA= 125 °C

0.02

TA= 25 °C

0

02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

80

60

40

- 0.7

- 1.0

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

Single Pulse

0.01

0.1 1 10 100

* V

*

DS(on)

TA=25 °C

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

Safe Operating Area

20

0

0.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1s
10 s
DC

is specified

DS(on)

011100.00.01

Document Number: 69654
S09-2109-Rev. E, 12-Oct-09

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Si4914BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

8

6

4

- Drain Current (A)

D

I

2

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Current Derating*

3.5

2.8

2.1

Power (W)

1.4

0.7

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Power, Junction-to-Foot

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

1.5

1.2

0.9

Power (W)

0.6

0.3

0

0 25 50 75 100 125 150

TA- Ambient Temperature (°C)

Power, Junction-to-Ambient

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Si4914BDY

Vishay Siliconix

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

0.1

0.01

0.05

0.02

-4

10

1

10

0.1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

Notes:

P

DM

t

1

t

2

t

100

thJA

thJA

t

1

2

=120 °C/W

(t)

100010

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA=PDMZ

Single Pulse

-3

10

-2

10

-1

1

JM

4. Surface Mounted

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

10

-2

10

Square WavePulse Duration (s)

-1

01110

Normalized Thermal Transient Impedance, Junction-to-Foot

Document Number: 69654
S09-2109-Rev. E, 12-Oct-09

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7

Si4914BDY

Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

40

30

20

- Drain Current (A)I

D

10

0

0 0.5 1.0 1.5 2.0 2.5

V

DS

VGS= 10 V thru 5 V

- Drain-to-Source Voltage (V)

Output Characteristics

0.040

0.034

0.028

4 V

3 V

- Drain Current (A)

D

I

1200

960

720

2.0

1.6

1.2

TJ= 25 °C

0.8

0.4
TJ= 125 °C

0

01.22.43.64.8 6.0

VGS- Gate-to-Source Voltage (V)

TJ= - 55 °C

Transfer Characteristics

C

iss

0.022

- On-Resistance (Ω)

DS(on)

R

0.016

0.010
0 1020304050

10

ID= 8 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 3.4 6.8 10.2 13.6 17.0

VGS=4.5V

VGS=10V

ID- Drain Current (A)

On-Resistance vs. Drain Current

VDS=10V

VDS=15V

VDS=20V

Qg- Total Gate Charge (nC)

Gate Charge

480

C - Capacitance (pF)

240

C

rss

0

0 6 12 18 24 30

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.7

ID=7.5A

1.5

1.3

- On-Resistance

1.1

(Normalized)

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Source Current (A)I

S

0.1

TJ= 150 °C

1

0 0.2 0.4 0.6 0.8 1.0 1.2

V

- Source-to-Drain Voltage (V)

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.10

0.08

0.06

0.04

0.02

0

02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Si4914BDY

Vishay Siliconix

TA= 125 °C

TA= 25 °C

-1

10

VDS=20V

-2

10

-3

10

- Reverse (A)I

-4

10

R

-5

10

-6

10

0 25 50 75 100 125 150

TJ- Temperature (°C)

VDS=30V

VDS=10V

Reverse Current Schottky

100

Limited byR

- Drain Current (A)I

D

0.01

*

DS(on)

10

1

0.1

TA= 25 °C

Single Pulse

0.1 1 10 100

VDS- Drain-to-Source Voltage (V)

* V

> minimum VGSat which R

GS

Power (W)

100

80

60

40

20

0

0.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1s
10 s

DC

is specified

DS(on)

011100.00.01

Safe Operating Area

Document Number: 69654
S09-2109-Rev. E, 12-Oct-09

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9

Si4914BDY

Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

11.0

8.8

Package Limited

6.6

4.4

- Drain Current (A)

D

I

2.2

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Current Derating*

4.0

3.2

2.4

Power (W)

1.6

0.8

0

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Power, Junction-to-Foot

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

1.5

1.2

0.9

Power (W)

0.6

0.3

0

0 25 50 75 100 125 150

TA- Ambient Temperature (°C)

Power, Junction-to-Ambient

limit.

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10

Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Si4914BDY

Vishay Siliconix

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

10

1

0.1

0.01
10

0.1

0.05

0.02

Single Pulse

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

Notes:

P

DM

t

1

t

2

t

100

thJA

thJA

1

t

2

(t)

=115 °C/W

100010

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA=PDMZ

JM

4. Surface Mounted

-3

10

-2

10

-1

1

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

10

-2

10

Square WavePulse Duration (s)

-1

01110

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69654

Document Number: 69654
S09-2109-Rev. E, 12-Oct-09

.

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11

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192
11-Sep-06

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1

VISHAY SILICONIX

TrenchFET® Power MOSFETs

Application Note 808

Mounting LITTLE FOOT®, SO-8 Power MOSFETs

Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use

integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and

0.050

1.27

design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the

0.027

0.69

0.07

1.98

Figure 2. Dual MOSFET SO-8 Pad Pattern

basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.

In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The

The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.

total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.

Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder

0.288

7.3

connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the

0.050

1.27

0.027

0.69

0.078

1.98

0.2

5.07

0.196

5.0

Figure 1. Single MOSFET SO-8 Pad

Pattern With Copper Spreading

Document Number: 70740 www.vishay.com
Revision: 18-Jun-07 1

drain pins, the solder mask generation occurs automatically.

A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least

0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.

0.288

7.3

8

0.2

5.07

With Copper Spreading

0.088

2.25

0.088

2.25

APPLICATION NOTE

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

Return to Index

0.022

(0.559)

0.246
(6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08

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Revision: 02-Oct-12

1

Document Number: 91000