Datasheet Si4862DY Datasheet (VISHAY)

Si4862DY

16

PRODUCT SUMMARY

V

(V)

DS

r

DS(on)

0.0033 @ VGS = 4.5 V 25

0.0055 @ VGS = 2.5 V 20

SD

1

SD

2

SD

3

GD

4

New Product

N-Channel 16-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW r

(W)

SO-8

I

(A)

D

8 7 6 5

D Low Gate Resistance D 100% R

G

APPLICATIONS

D Synchronous Rectification D Low Output Voltage Synchronous Rectification

D

G

Tested

Vishay Siliconix

DS(on)

Top View

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C TA = 70_C

I

P

I

DM

I

DS GS

D

25 17 20 13

S

D

stg

2.9 1.3

3.5 1.6

2.2 1

16

"8

60

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJF

29 35 67 80 13 16

V

A

W

_C

_C/W

Document Number: 71439 S-03662—Rev. B, 14-Apr-03

www.vishay.com

1

Si4862DY

Drain-Source On-State Resistance

a

W

VDD = 6 V, RL = 6 W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

Forward Transconductance Diode Forward Voltage

Dynamic

b

a

-

a

Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Gate Resistance R Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Source-Drain Reverse Recovery Time t

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g gs gd

g

r

f rr

Notes a. Pulse test; pulse width v b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

VDS = VGS, I VDS = 0 V, VGS = "8 V "100

VDS = 12.8 V, VGS = 0 V 1

VDS = 12.8 V, VGS = 0 V, TJ = 55_C

VDS w 5 V , V

V

GS

VGS = 2.5 V, ID = 20 A 0.0045 0.0055

VDS = 6 V, ID = 25 A 140 S

IS = 2.9 A, VGS = 0 V 0.75 1.1 V

V

= 6 V, VGS = 4.5 V, ID = 25 A

DS

VDD = 6 V, RL = 6 W

ID ^ 1 A, V

IF = 2.9 A, di/dt = 100 A/ms

D

= 4.5 V, I

= 4.5 V, RG = 6 W

GEN

= 250 mA

= 4.5 V

GS

= 25 A

D

0.6 V

5

30 A

0.0027 0.0033

48 70

11.8

8.9

0.5 1.3 2.2 42 60 38 60

120 180

50 75 80 120

nA

mA

nC

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

60

50

40

30

20

- Drain Current (A)I

D

10

0

012345

www.vishay.com

2

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

VDS - Drain-to-Source Voltage (V)

2 V

60

50

40

30

TC = 125_C

20

- Drain Current (A)I

D

10

25_C

0

0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V)

Document Number: 71439

S-03662—Rev. B, 14-Apr-03

-55_C

Si4862DY

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current

VGS = 2.5 V

VGS = 4.5 V

0 102030405060

ID - Drain Current (A)

Gate Charge

VDS = 6 V

= 25 A

I

D

W )

- On-Resistance (r

DS(on)

0.010

0.008

0.006

0.004

0.002

0.000

5

4

10000

8000

6000

4000

C - Capacitance (pF)

2000

0

03691215

1.6

1.4

W)

Vishay Siliconix

Capacitance

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

VGS = 4.5 V

= 25 A

I

D

- Gate-to-Source Voltage (V)

GS

V

60

10

- Source Current (A)I

S

3

2

1

0

0 1224364860

Qg - Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

TJ = 150_C

TJ = 25_C

(Normalized)

- On-Resistance (r

DS(on)

0.015

0.012

W )

0.009

0.006

- On-Resistance (r

DS(on)

0.003

1.2

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150 T

- Junction Temperature (_C)

J

On-Resistance vs. Gate-to-Source Voltage

ID = 25 A

1

0.00 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V)

Document Number: 71439 S-03662—Rev. B, 14-Apr-03

1.0 1.2

0.000 02468

VGS - Gate-to-Source Voltage (V)

www.vishay.com

3

Si4862DY

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.4

0.2

-0.0

-0.2

Variance (V)V

GS(th)

-0.4

-0.6

-0.8

-50 -25 0 25 50 75 100 125 150

2

Threshold Voltage

ID = 250 mA

TJ - Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

60

50

40

30

Power (W)

20

10

0 10

Single Pulse Power

-2

-1

1 100 6001010

Time (sec)

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

2

1

0.1

Thermal Impedance

Normalized Effective Transient

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

10

-3

Single Pulse

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

t t

thJA

100

1 2

= 67_C/W

(t)

0.01

www.vishay.com

4

Single Pulse

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

Document Number: 71439

S-03662—Rev. B, 14-Apr-03