Datasheet Si4856ADY Datasheet (Vishay)

Si4856ADY

30

21

V

b

C/W

PRODUCT SUMMARY

V

DS

(V)

0.0052 @ VGS = 10 V 17

0.0076 @ VGS = 4.5 V 14

Ordering Information: Si4856ADY—E3

r

(W)

DS(on)

SD

S

SD

G

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS
D 100% R

I

(A) Qg (Typ)

D

SO-8

1

2

3

4

Top View

Si4856ADY-T1—E3 (with Tape and Reel)

8

D

7

6

D

5

APPLICATIONS

D Buck Converter
D Synchronous Rectifier

G

Vishay Siliconix

Tested

g

− Secondary Rectifier

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

TC = 25_C

a,

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Pulse Source-Drain Diode Current I

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a, b

a

TC = 70_C

TA = 25_C

TA = 70_C

L = 0.1 mH

TC = 25_C

TC = 70_C

TA = 25_C

TA = 70_C

I

E

P

I

DM

I

SM

AS

DS

GS

D

S

AS

D

stg

30

"20

26

21

17

14

"50

2.7

50

45

100 mJ

6.5

4.2

3.0

2.0

−55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (MOSFET)

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. t = 10 sec

a

t v 10 sec

Steady State

R

thJA

thJF

34 41

67 80

15 19

A

W

_C

_C/W

Document Number: 73239
S-50031—Rev. A, 17-Jan-05

www.vishay.com

1

Si4856ADY

V

Drain-Source On-State Resistance

a

r

W

DS GS D

VDD = 15 V, RL = 15 W

g

Vishay Siliconix

New Product

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Drain-Source Breakdown Voltage V

VDS Temperature Coefficient

V

Temperature Coefficient

GS(th)

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

-

a

a

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate-Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

DV

DV

GS(th)

DS

DS/Tj

GS(th)/Tj

GSS

DSS

I

D(on)

DS(on)

g

fs

V

SD

g

gs

gd

g

d(on)

r

d(off)

f

rr

rr

VDS = VGS, I

VGS = 0 V, I

I

= 250 mA

D

= 250 mA

D

= 250 mA

D

VDS = 0 V, VGS = "20 V

VDS = 30 V, VGS = 0 V 1

VDS = 30 V, VGS = 0 V, TJ = 70_C

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 17 A

VGS = 4.5 V, ID = 14 A 0.0063 0.0076

VDS = 15 V, ID = 17 A 57 S

IS = 2.7 A, VGS = 0 V 0.72 1.1 V

V

= 15 V, VGS = 4.5 V, ID = 17 A 8.2 nC

DS

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

= 10 V, Rg = 6 W

GEN

IF = 2.7 A, di/dt = 100 A/ms

IF = 2.9 A, di/dt = 100 A/ms

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .

1.5 2.5

30

24

−6.2

mV/_C

"100 nA

5

40 A

0.0043 0.0052

21 32

7.2

0.7 1.5 2.3

18 27

15 23

57 90

20 30

40 60

36 60 nC

_

mA

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

60

50

40

30

20

− Drain Current (A)I

D

10

0

0.0 0.4 0.8 1.2 1.6 2.0

www.vishay.com

2

Output Characteristics Transfer Characteristics

VGS = 10 thru 4 V

VDS − Drain-to-Source Voltage (V)

3 V

60

50

40

30

20

− Drain Current (A)I

D

10

TC = 125_C

25_C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS − Gate-to-Source Voltage (V)

Document Number: 73239

S-50031—Rev. A, 17-Jan-05

−55_C

Si4856ADY

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0080

0.0075

0.0070

W )

0.0065

0.0060

0.0055

0.0050

− On-Resistance (r

0.0045

DS(on)

0.0040

0.0035

0.0030

− Gate-to-Source Voltage (V)

GS

V

6

5

4

3

2

1

On-Resistance vs. Drain Current

VGS = 4.5 V

VGS = 10 V

0 1020304050

ID − Drain Current (A)

Gate Charge

ID = 17 A

VDS = 10 V

15 V

20 V

3600

3000

2400

1800

1200

C − Capacitance (pF)

600

0

0 6 12 18 24 30

On-Resistance vs. Junction Temperature

1.6

1.4

1.2

1.0

− On-Resiistance
(Normalized)

DS(on)

r

0.8

Vishay Siliconix

Capacitance

C

oss

C

rss

V

− Drain-to-Source Voltage (V)

DS

VGS = 10 V

= 17 A

I

D

C

iss

0

0 6 12 18 24 30

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

60

10

1

− Source Current (A)I

S

0.1

0.00 0.2 0.4 0.6 0.8

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 73239
S-50031—Rev. A, 17-Jan-05

TJ = 150_C

TJ = 25_C

1.0 1.2

0.6

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

0.025

0.020

W )

0.015

0.010

− On-Resistance (r

0.005

DS(on)

0.000

ID = 17 A

TJ = 125_C

TJ = 25_C

0246810

www.vishay.com

3

Si4856ADY

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.4

0.2

−0.0

−0.2

Variance (V)V

GS(th)

−0.4

−0.6

−0.8

−50 −25 0 25 50 75 100 125 150

Threshold Voltage

ID = 250 mA

TJ − Temperature (_C)

* Limited by

r

DS(on)

100

10

Safe Operating Area

200

160

120

Power (W)

80

40

0

0.001

1 ms

Single Pulse Power

0.1

Time (sec)

1

100.01

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

−4

10 ms

1

100 ms

− Drain Current (A)I

D

0.1

TC = 25_C

Single Pulse

1 s

10 s

dc

0.01

0.1 1 10 100
VDS − Drain-to-Source Voltage (V)

u minimum VGS at which r

*V

GS

DS(on)

is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

2

t

thJA

thJA

100

1

t

2

= 67_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−3

10

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

www.vishay.com

4

Document Number: 73239

S-50031—Rev. A, 17-Jan-05

Si4856ADY

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

Duty Cycle = 0.5

1

0.2

0.1

0.1

0.01

0.05

0.02

Single Pulse

−4

10

−3

10

−2

10

Square Wave Pulse Duration (sec)

Thermal Impedance

Normalized Effective Transient

Vishay Siliconix

−1

11010

Vishay Siliconix maintains worldw ide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73239.

Document Number: 73239
S-50031—Rev. A, 17-Jan-05

www.vishay.com

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1