Page 1
Si4837DY
V
Conti
t (TJ = 150_C) (MOSFET)
a
b
I
A
b
b
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
(V) r
DS
-30
0.020 @ VGS = -10 V 8.3
0.030 @ VGS = - 4.5 V 6.8
(W) I
DS(on)
SCHOTTKY PRODUCT SUMMARY
V
(V)
KA
30 0.53 V @ 3 A 3
Diode Forward Voltage
Ordering Information: Si4837DY
Vf (V)
SO-8
KA
1
S
2
SD
3
G
4
Top View
Si4837DY-T1 (with Tape and Reel)
8
D
7
6
D
5
FEATURES
(A)
D
D TrenchFETr Power MOSFET
D LITTLE FOOTr Plus Schottky
D 100% Rg Tested
APPLICATIONS
D Battery Charging
D DC/DC Converters
I
(A)
F
G
P-Channel MOSFET
- Asynchronous Buck
- Voltage Inverter
S
D
K
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain-Source Voltage (MOSFET) V
Reverse Voltage (Schottky) V
Gate-Source Voltage (MOSFET) V
nuous Drain Curren
Pulsed Drain Current (MOSFET) I
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky) I
Pulsed Foward Current (Schottky) I
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
Parameter Symbol 10 Sec Steady State Unit
DS
KA
GS
=
_
a,
a,
a,
TA = 25_C
b
,
TA = 70_C
a, b
TA = 25_C 2.5 1.38
TA = 70_C
TA = 25_C
TA = 70_C 0.98 0.64
D
DM
I
S
F
FM
P
D
stg
-8.3
-6.6 -4.9
-2.3 -1.25
1.6 0.88
1.5 1.0
-30
30
"20
-6.1
-40
3
20
-55 to 150 _C
V
W
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1
Page 2
Si4837DY
DS
,
GS
,
D
VDD = -15 V, RL = 15 W
F
d Vol
V
V
g
rm
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (t v 10 sec)
Maximum Junction-to-Ambient (t = steady state)
a
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
MOSFET 37 50
Schottky
R
MOSFET
thJA
Schottky 100 125
MOSFET
R
Schottky
thJF
65 81
70 90
_C/W
20 25
50 62.5
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate-Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
d(on)
d(off)
fs
SD
g
gs
gd
g
r
f
rr
VDS = VGS, I
VDS = 0 V, VGS = "20 V
= -250 mA -1.0 V
D
"100 nA
VDS = -24 V, VGS = 0 V -1
VDS = -24 V, VGS = 0 V, TJ = 75_C -10
VDS w -5 V, VGS = -10 V -20 A
VGS = -10 V, ID = - 8.3 A 0.0165 0.020
VGS = - 4.5 V, ID = - 6.8 A
0.0245 0.030
VDS = -15 V, ID = - 8.3 A 22 S
IS = - 2.3 A, VGS = 0 V -0.75 -1.1 V
22 33
V
= - 15 V, VGS = -5 V, ID = - 8.3 A
DS
9
6.6
1 1.9 2 W
17 26
VDD = -15 V, RL = 15 W
ID ^ - 1 A, V
GEN
= - 10 V, RG = 6 W
15 23
56 85
21 32
IF = - 2.3 A, di/dt = 100 A/ms 45 70
mA
W
nC
ns
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
orwar
Maximum Reverse Leakage Current I
Junction Capacitance C
tage Drop
F
rm
T
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2
IF = 3 A 0.485 0.53
IF = 3 A, TJ = 125_C 0.42 0.47
Vr = 30 V 0.008 0.1
Vr = 30 V, TJ = 75_C 0.4 5
Vr = 30 V, TJ = 125_C 6.5 20
Vr = 15 V
102 pF
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
mA
Page 3
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
50
VGS = 10 thru 5 V
40
30
20
- Drain Current (A)I
D
10
0
0246810
VDS - Drain-to-Source Voltage (V)
4 V
3 V
On-Resistance vs. Drain Current
0.05
0.04
W )
0.03
VGS = 4.5 V
50
40
30
20
- Drain Current (A)I
D
10
0
012345
VGS - Gate-to-Source Voltage (V)
TC = 125_C
25_C
-55_C
Capacitance
3500
2800
2100
C
iss
Output Characteristics Transfer Characteristics
0.02
- On-Resistance (r
DS(on)
0.01
0.00
10
- Gate-to-Source Voltage (V)
GS
V
VGS = 10 V
0 1020304050
ID - Drain Current (A)
Gate Charge
VDS = 15 V
I
= 8.3 A
8
6
4
2
0
D
0 8 16 24 32 40
Qg - Total Gate Charge (nC)
1400
C - Capacitance (pF)
700
0
0 6 12 18 24 30
On-Resistance vs. Junction Temperature
1.8
1.6
W )
1.4
1.2
(Normalized)
- On-Resistance (r
1.0
DS(on)
0.8
0.6
-50 -25 0 25 50 75 100 125 150
C
oss
C
rss
V
- Drain-to-Source Voltage (V)
DS
VGS = 10 V
I
= 8.3 A
D
T
- Junction Temperature (_C)
J
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
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Page 4
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50
0.070
0.056
W )
TJ = 150_C
10
- Source Current (A)I
0.042
0.028
- On-Resistance (r
ID = 8.3 A
S
TJ = 25_C
1
0.00 0.25 0.50 0.75 1.00
1.25 1.50
DS(on)
0.014
0.000
0246810
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
0.8
0.6
0.4
Threshold Voltage
ID = 250 mA
Single Pulse Power, Junction-to-Ambient
200
160
120
Variance (V)V
0.2
GS(th)
0.0
-0.2
-0.4
-50 -25 0 25 50 75 100 125 150
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-4
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
10
80
Power (W)
40
0
0.001 0.1 1 10
0.01
Time (sec)
Notes:
P
DM
t
1
t
2
t
thJA
thJA
100
1
t
2
= 70_C/W
(t)
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
-2
10
-1
1 10 60010
Square Wave Pulse Duration (sec)
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Document Number: 71662
S-31726—Rev. B, 18-Aug-03
Page 5
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET
2
1
0.1
Thermal Impedance
Normalized Effective Transient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
-4
10
-3
10
-2
10
Square Wave Pulse Duration (sec)
-1
11010
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
Forward Voltage Drop
TJ = 25_C
VF - Forward Voltage Drop (V)
0.6
0.8
- Reverse Current (mA)I
R
Reverse Current vs. Junction Temperature
100
10
1
0.1
0.01
0.001
0.0001
0 255075100
30 V
TJ - Junction Temperature (_C)
20 V
500
125 150
5
TJ = 150_C
1
- Forward Current (A)I
F
0.1
0 0.2 0.4
Capacitance
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
400
300
200
- Junction Capacitance (pF)
T
100
C
0
0 6 12 18 24 30
VKA - Reverse Voltage (V
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Page 6
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-4
Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
t
thJA
thJA
t
(t)
100
1
2
= 100_C/W
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
-3
10
-2
10
-1
1 10 60010
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
0.1
Thermal Impedance
Normalized Effective Transient
0.01
10
0.1
0.05
0.02
Single Pulse
-4
-3
10
-2
10
-1
11010
Square Wave Pulse Duration (sec)
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Document Number: 71662
S-31726—Rev. B, 18-Aug-03
Page 7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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