Datasheet si4835dy_2 Datasheet

PRODUCT SUMMARY

Conti

t (TJ = 150_C)

a

b

I

A

b

V

(V) r

DS

-30

DS(on)

0.019 @ VGS = -10 V -8.0

0.033 @ VGS = -4.5 V -6.0

SD

1

S

2

SD

3

G

4

P-Channel 30-V (D-S) MOSFET

(W) I

SO-8

8 7 6 5

(A)

D

SSS

D

G

Si4835DY

Vishay Siliconix

Top View

Ordering Information: Si4835DY

Si4835DY-T1 (with Tape and Reel)

D DD D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V Gate-Source Voltage V

a,

b

nuous Drain Curren

Pulsed Drain Current I Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

=

a,

,

_

a, b

TA = 25_C TA = 70_C

DS GS

D

DM

I

S

P

D

stg

-55 to 150 _C

THERMAL RESISTANCE RATINGS

-30

"25

-8.0

-6.4

-50

-2.1

2.5

1.6

V

W

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Notes a. Surface Mounted on FR4 Board. b. t v10 sec.

Document Number: 70836 S-31062—Rev. B, 26-May-03

a

t v 10 sec

Steady State

R

thJA

70

50

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_C/W

1

Si4835DY

VDD = -15 V, RL = 15 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance Diode Forward Voltage

Dynamic

b

a

Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Gate Resistance R Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Source-Drain Reverse Recovery Time t

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g gs gd

g

r

f

rr

VDS = VGS, I VDS = 0 V, VGS = "25 V

= - 250 mA -1.0 V

D

"100 nA

VDS = -30 V, VGS = 0 V -1

VDS = -30 V, VGS = 0 V, TJ = 70_C -5

VDS w -5 V, VGS = -10 V -40

VDS w -5 V, VGS = -4.5 V -10

VGS = -10 V, ID = -8.0 A 0.0155 0.019

VGS = -4.5 V, I

= -5.0 A

D

0.027 0.033

VDS = -15 V, ID = -8.0 A 17 S

IS = -2.1 A, VGS = 0 V -0.75 -1.2 V

21 31

V

= - 10 V, VGS = -5 V, ID = -4.6 A 6.5 nC

DS

8

1.0 2.6 4.4 W 16 30

VDD = -15 V, RL = 15 W

ID ^ -1 A, V

GEN

= - 10 V, RG = 6 W

13 25 56 100 30 60

IF = -2.1 A, di/dt = 100 A/ms 40 80

mA

A

W

ns

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2

Document Number: 70836

S-31062—Rev. B, 26-May-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4835DY

Vishay Siliconix

50

40

30

20

- Drain Current (A)I

D

10

0

0246810

VGS = 6 thru 10 V

5 V

4 V

2 V

VDS - Drain-to-Source Voltage (V)

3 V

On-Resistance vs. Drain Current

0.20

W )

0.15

0.10

- On-Resistance (r

Output Characteristics Transfer Characteristics

0.05

DS(on)

0.00

VGS = 4.5 V

VGS = 10 V

0 1020304050

50

40

30

20

- Drain Current (A)I

D

10

0

0123456

VGS - Gate-to-Source Voltage (V)

TC = -55_C

25_C

Capacitance

3500

3000

C

2500

2000

1500

C - Capacitance (pF)

1000

500

0

0 6 12 18 24 30

C

oss

C

rss

iss

125_C

10

VDS = 15 V I

= 4.6 A

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 10203040

Qg - Total Gate Charge (nC)

Document Number: 70836 S-31062—Rev. B, 26-May-03

ID - Drain Current (A)

Gate Charge

W)

(Normalized)

- On-Resistance (r

DS(on)

V

- Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

VGS = 10 V I

= 8.0 A

D

-50 -25 0 25 50 75 100 125 150 T

- Junction Temperature (_C)

J

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3

Si4835DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

30

10

TJ = 150_C

- Source Current (A)I

S

1

0.00 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage

1.0

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

ID = 250 mA

Variance (V)V

GS(th)

0.8

0.6

0.4

0.2

0.0

TJ = 25_C

1.0 1.2

0.10

0.08

W )

0.06

0.04

- On-Resistance (r

DS(on)

0.02

0.00

80

60

40

Power (W)

20

ID = 8.0 A

0246810

Single Pulse Power

-0.2

-0.4

-50 -25 0 25 50 75 100 125 150

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

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4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

TJ - Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

10

0

0.01

1

10 300.1

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

100

1

t

2

= 70_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

Document Number: 70836

S-31062—Rev. B, 26-May-03

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Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1