Datasheet si4832dy Datasheet

N-Channel 30-V (D-S) MOSFET with Schottky Diode

P

Symbol

Uni

V

Conti

t (TJ = 150_C) (MOSFET)

b

I

A

b

MOSFET PRODUCT SUMMARY

V

(V) r

DS

30

0.018 @ VGS = 10 V 9

0.028 @ VGS = 4.5 V 7.3

SCHOTTKY PRODUCT SUMMARY

V

(V)

DS

30 0.53 V @ 3.0 A 4.0

Diode Forward Voltage

SD

1

S

2

SD

3

G

4

Top View

(W) I

DS(on)

VSD (V)

SO-8

8 7 6 5

Ordering Information:

D

Si4832DY Si4832DY-T1 (with Tape and Reel)

D

Si4832DY

Vishay Siliconix

(A)

D

I

(A)

F

D

G

N-Channel MOSFET

S

Schottky Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

arameter

Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET) V

,

b

=

nuous Drain Curren

Pulsed Drain Current (MOSFET) I Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) I Pulsed Foward Current (Schottky) I

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range TJ, T

_

a

a,

,

a

TA = 25_C TA = 70_C

, b

TA = 25_C 2.5 1.4 TA = 70_C TA = 25_C TA = 70_C 1.3 0.8

V

P

DM

I

FM

DS

GS

10 sec Steady State

D

S F

D

stg

7.5 5.6

2.1 1.2

4.0 2.3

1.6 0.9

2.0 1.2

-55 to 150 -55 to 150 _C

Limit

30 30

"20

9

50

THERMAL RESISTANCE RATINGS

Parameter Device Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (t v 10 sec)

Maximum Junction-to-Ambient (t = steady state)

Notes a. Surface Mounted on FR4 Board. b. t v 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

a

MOSFET 40 50

Schottky

MOSFET

Schottky 80 100

R

thJA

50 60 70 90

t

V

6.9

W

_C/W

Document Number: 71774 S-31062—Rev. F, 26-May-03

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1

Si4832DY

(

y)

(MOSFET + Schottky)

DSS

VDD = 15 V, RL = 15 W

Vishay Siliconix

MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V Gate-Body Leakage I

Zero Gate Voltage Drain Current

MOSFET + Schottk

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Schottky Diode Forward Voltage

Dynamic

b

a

Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Gate Resistance R Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Source-Drain Reverse Recovery Time t

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

GS(th)

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g gs gd

g

r

f

rr

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= 250 mA 1 V

D

"100 nA

VDS = 30 V, VGS = 0 V 0.007 0.100 VDS = 30 V, VGS = 0 V, TJ = 100_C 1.5 10 VDS = 30 V, VGS = 0 V, TJ = 125_C 6.5 20

VDS w 5 V, VGS = 10 V 20 A

VGS = 10 V, ID = 9 A 0.012 0.018

VGS = 4.5 V, I

= 7.3 A

D

0.019 0.028

VDS = 15 V, ID = 9 A 23 S

IS = 3.0 A, VGS = 0 V 0.493 0.53

IS = 3.0 A, VGS = 0 V, TJ = 125_C 0.40 0.47

13 24

V

= 15 V, VGS = 5 V, ID = 9 A 4 nC

DS

5.6

0.2 1.0 2.4 W 16 25

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

GEN

= 10 V, RG = 6 W

10 20 35 50 13 20

IF = 3.0 A, di/dt = 100 A/ms 40 70

mA

W

V

ns

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Document Number: 71774

S-31062—Rev. F, 26-May-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4832DY

Vishay Siliconix

50

VGS = 10 thru 5 V

40

30

20

- Drain Current (A)I

D

10

0

012345

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.10

W )

0.08

0.06

- On-Resistance (r

0.04

Output Characteristics Transfer Characteristics

DS(on)

0.02

VGS = 4.5 V

VGS = 10 V

4 V

3 V

50

40

30

20

- Drain Current (A)I

D

10

0

012345

VGS - Gate-to-Source Voltage (V)

TC = 125_C

25_C

-55_C

Capacitance

1800

1500

1200

900

600

C - Capacitance (pF)

300

C

iss

C

oss

rss

0.00 0 1020304050

10

VDS = 15 V I

= 9 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

Document Number: 71774 S-31062—Rev. F, 26-May-03

D

0 5 10 15 20 25

Qg - Total Gate Charge (nC)

ID - Drain Current (A)

Gate Charge

1.6

1.4

W)

1.2

(Normalized)

- On-Resistance (r

1.0

DS(on)

0.8

0.6

0

0 5 10 15 20 25 30

V

- Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 10 V I

= 9 A

D

-50 -25 0 25 50 75 100 125 150 T

- Junction Temperature (_C)

J

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Si4832DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

50

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

10

TJ = 150_C

TJ = 25_C

1

- Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Reverse Current (Schottky)

30 10

1

30 V

0.1 10 V

0.01

- Reverse Current (mA)I

R

0.001

20 V

0.10

0.08

W )

0.06

0.04

- On-Resistance (r

DS(on)

0.02

0.00

Power (W)

ID = 9.0 A

0246810

Single Pulse Power (MOSFET)

50

40

30

20

10

0.0001 0 255075100

2

1

0.1

Thermal Impedance

Normalized Effective Transient

Single Pulse

0.01

-4

10

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4

TJ - Junction Temperature (_C)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

125 150

0

Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)

-3

10

-2

10

-1

10

1

Square Wave Pulse Duration (sec)

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

1

t

2

= 70_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

10 100 600

Document Number: 71774

S-31062—Rev. F, 26-May-03

6001001010.10.01

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4832DY

Vishay Siliconix

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

Thermal Impedance

0.02

Normalized Effective Transient

0.01

-4

10

Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

Single Pulse

-3

10

-2

10

-1

10

Square Wave Pulse Duration (sec)

4. Surface Mounted

11030

t

1

t

2

t

1

t

2

= 80_C/W

thJA

(t)

thJA

Document Number: 71774 S-31062—Rev. F, 26-May-03

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