Datasheet si4830dy Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

C/W

PRODUCT SUMMARY

V

(V) r

DS

30

0.022 @ VGS = 10 V 7.5

0.030 @ VGS = 4.5 V 6.5

SCHOTTKY PRODUCT SUMMARY

V

(V)

DS

30 0.50 V @ 1.0 A 2.0

Diode Forward Voltage

DS(on)

VSD (V)

SO-8

(W) I

Si4830DY

Vishay Siliconix

(A)

D

I

(A)

F

D1D

1

D2D

2

S

1

G

2

1

S

3

2

G

4

2

Top View

Ordering Information: Si4830DY

Si4830DY-T1 (with Tape and Reel)

D

8

1

D

7

1

D

6

2

D

5

2

G

1

N-Channel MOSFET

G

2

S

1

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

I

DM

I

DS

GS

D

S

D

stg

7.5 5.7

6.0 4.6

1.7 0.9

2.0 1.1

1.3 0.7

30

"20

30

-55 to 150 _C

Schottky Diode

S

2

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady-State R

Notes a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71161 S-31989—Rev. C, 13-Oct-03

a

t v 10 sec

Steady-State

MOSFET Schottky

Typ Max Typ Max

R

thJA

thJC

52 62.5 53 62.5

93 110 93 110

35 40 35 40

Unit

_C/W

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1

Si4830DY

Ch 1

b

Ch 1

DS

,

GS

,

D

VDD = 15 V, RL = 15 W

Ch 1

g

rm

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).

Parameter Symbol Test Condition Min TypaMax Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

b

Diode Forward Voltage

Dynamic

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v

300 ms, duty cycle v 2%.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

g

r

f

rr

VDS = 30 V, VGS = 0 V, TJ = 85_C

VDS = VGS, I

VDS = 0 V, V

VDS = 30 V, VGS = 0 V

V

DS

= 250 mA 0.8 V

D

= "20 V "100 nA

GS

Ch-1

Ch-2

_

Ch-1

Ch-2

= 5 V, VGS = 10 V 20 A

VGS = 10 V, ID = 7.5 A 0.018 0.022

VGS = 4.5 V, ID = 6.5 A 0.024 0.030

VDS = 15 V, ID = 7.5 A 22 S

IS = 1 A, VGS = 0 V

V

= 15 V, VGS = 10 V, ID = 7.5 A

DS

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

= 10 V, RG = 6 W

GEN

IF = 1.7 A, di/dt = 100 A/ms

Ch-1

Ch-2

Ch-1

Ch-2

1

100

15

2000

0.8 1.2

0.47 0.5

13 20

2

2.7

0.5 3.2 W

8 16

10 20

21 40

10 20

40 80

32 70

mA

W

V

nC

ns

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Ty p Max Unit

Forward Voltage Drop V

Maximum Reverse Leakage Current I

Junction Capacitance C

F

rm

T

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2

IF = 1.0 A 0.47 0.50

IF = 1.0 A, TJ = 125_C 0.36 0.42

Vr = 30 V 0.004 0.100

Vr = 30 V, TJ = 100_C 0.7 10

Vr = -30 V, TJ = 125_C 3.0 20

Vr = 10 V

50 pF

Document Number: 71161

S-31989—Rev. C, 13-Oct-03

V

mA

Si4830DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET

20

VGS = 10 thru 4 V

16

12

8

- Drain Current (A)I

D

W )

- On-Resistance (r

DS(on)

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.040

0.032

0.024

0.016

0.008

Output Characteristics Transfer Characteristics

20

3 V

16

12

8

2 V

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

VGS = 4.5 V

VGS = 10 V

- Drain Current (A)I

D

4

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS - Gate-to-Source Voltage (V)

1000

800

600

400

C - Capacitance (pF)

200

C

rss

TC = 125_C

25_C

Capacitance

C

iss

C

oss

-55_C

0.000 048121620

10

VDS = 15 V I

= 7.5 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

Document Number: 71161 S-31989—Rev. C, 13-Oct-03

D

0 3 6 9 12 15

- Drain Current (A)

I

D

Gate Charge

Qg - Total Gate Charge (nC)

W)

(Normalized)

- On-Resistance (r

DS(on)

0

0 6 12 18 24 30

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.6

VGS = 10 V I

= 7.5 A

D

1.4

1.2

1.0

0.8

0.6

-50 -25 0 25 50 75 100 125 150

T

- Junction Temperature (_C)

J

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3

Si4830DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

20

0.04

10

TJ = 150_C

- Source Current (A)I

S

TJ = 25_C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage

0.4

0.2

ID = 250 mA

-0.0

-0.2

Variance (V)V

GS(th)

-0.4

W )

0.03

0.02

- On-Resistance (r

0.01

DS(on)

0.00

50

40

30

Power (W)

20

ID = 7.5 A

0246810

Single Pulse Power

-0.6

-0.8

-50 -25 0 25 50 75 100 125 150

TJ - Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

0.1

0.01 10

0.05

0.02

-4

Single Pulse

-3

10

Thermal Impedance

Normalized Effective Transient

10

0

-3

10

-1

-2

1 100 6001010

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

= 93_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

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Document Number: 71161

S-31989—Rev. C, 13-Oct-03

Si4830DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET

2

1

Duty Cycle = 0.5

0.2

0.1

0.01

0.05

0.02

Single Pulse

-4

10

Thermal Impedance

Normalized Effective Transient

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY

Normalized Thermal Transient Impedance, Junction-to-Foot

-3

10

-2

10

Square Wave Pulse Duration (sec)

-1

11010

- Reverse Current (mA)I

R

Reverse Current vs. Junction Temperature

20

10

1

0.1

0.01

0.001

0.0001 0 25 50 75 100 125 150

30 V

24 V

TJ - Temperature (_C)

Capacitance

200

160

120

Forward Voltage Drop

10

TJ = 150_C

TJ = 25_C

- Forward Current (A)I

F

1

0.0 0.3 0.6 0.9 1.2 1.5

VF - Forward Voltage Drop (V)

80

C - Capacitance (pF)

40

0

0 6 12 18 24 30

VDS - Drain-to-Source Voltage (V)

Document Number: 71161 S-31989—Rev. C, 13-Oct-03

C

oss

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