Datasheet si4814dy Datasheet

Si4814DY

C/W

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

Channel-1

Channel-2

V

(V) r

DS

30

0.021 @ VGS = 10 V 7.0

0.0325 @ VGS = 4.5 V 5.6

0.020 @ VGS = 10 V 7.4

0.0265 @ VGS = 4.5 V 6.4

DS(on)

(W) I

SCHOTTKY PRODUCT SUMMARY

VSD (V)

V

(V)

DS

30 0.50 V @ 1.0 A 2.0

Ordering Information: Si4814DY

Diode Forward Voltage

SO-8

D

1

D

2

1

G

3

2

S

4

2

Top View

Si4814DY-T1 (with Tape and Reel)

G

8

S1/D

7

S1/D

6

S1/D

5

FEATURES

(A)

D

D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout

Options

D 100% R

Tested

g

APPLICATIONS

D DC/DC Converters

− Notebook

D

1

I

(A)

F

G

1

2

N-Channel 1

MOSFET

G

2

N-Channel 2

MOSFET

S1/D

2

Schottky Diode

S

2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Channel-1 Channel-2

Parameter Symbol

Drain-Source Voltage V

Gate-Source Voltage V

TA = 25_C

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 70_C

a

TA = 25_C

TA = 70_C

P

I

DM

I

DS

GS

D

S

D

10 secs Steady State 10 secs Steady State

30

20

7.0 5.5 7.4 5.7

5.6 4.3 6 4.5

40 40

1.7 1.0 1.8 0.95

1.9 1.1 2.0 1.16

1.2 0.71 1.3 0.74

stg

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2

Parameter Symbol

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady-State R

Notes a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady-State

R

thJA

thJF

Typ Max Ty p Max

52 65 47 60

90 11 2 85 107

30 38 28 35

Unit

V

A

W

Unit

_C/W

Document Number: 71685 S-32124—Rev. E, 27-Oct-03

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1

Si4814DY

b

Channel-1

Channel 2

VDD = 15 V, RL = 15 W

Channel 2

0 V,

I

^ 1 A, V

10 V, RG = 6 W

Maximum Reverse Leakage Current

I

rm

mA

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min TypaMax Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v

300 ms, duty cycle v 2%.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

g

r

f

rr

VDS = VGS, I

VDS = 0 V, V

= 250 mA

D

= 20 V

GS

VDS = 30 V, VGS = 0 V

VDS = 30 V, VGS = 0 V, TJ = 85_C

V

= 5 V, VGS = 10 V

DS

_

VGS = 10 V, ID = 7.0 A

VGS = 10 V, ID = 7.4 A Ch-2 0.0165 0.020

VGS = 4.5 V, ID = 5.6 A

VGS = 4.5 V, ID = 6.4 A Ch-2 0.022 0.0265

VDS = 15 V, ID = 7.0 A

VDS = 15 V, ID = 7.4 A Ch-2 20

IS = 1.7 A, VGS = 0 V

IS = 1 A, VGS = 0 V Ch-2 0.47 0.5

V

DS

V

DS

ID ^ 1 A, V

I

D

Channel-1

= 15 V, VGS = 5 V, ID = 7.0 A

Channel-2

= 15 V, VGS = 5 V, ID = −7.4 A

Channel-1

V

= 15 V, RL = 15 W

DD

= 10 V, RG = 6 W

GEN

Channel-2

VDD = 15 V, RL = 15 W

^ 1 A, V

GEN

= 1

=

R

= 6 W

IF = 1.3 A, di/dt = 100 A/ms Ch-1 50 80

IF = 2.2 A, di/dt = 100 mA/ms

Ch-1

Ch-2 0.8

Ch-1

Ch-2 100

Ch-1

Ch-2 100

Ch-1

Ch-2 2000

Ch-1

Ch-2 20

Ch-1

Ch-2 9.7 15

Ch-1

Ch-2 2.6

Ch-1

Ch-2 3.8

Ch-1

Ch-2 0.5 1.8 3.1

Ch-1

Ch-2 13 20

Ch-1

Ch-2 13 20

Ch-1

Ch-2 29 45

Ch-1

Ch-2 12 20

Ch-2

0.8

100

15

20

0.0175 0.021

0.027 0.0325

17

0.7 1.1

6.5 10

1.5

2.7

0.5 1.6 2.6

12 20

13 20

22 35

8 15

46 80

V

nA

1

mA

A

W

S

V

nC

W

ns

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Ty p Max Unit

Forward Voltage Drop V

Maximum Reverse Leakage Current I

Junction Capacitance C

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2

F

IF = 1.0 A, TJ = 125_C 0.36 0.42

IF = 1.0 A 0.47 0.50

V

Vr = 30 V 0.004 0.100

rm

Vr = 30 V, TJ = 100_C 0.7 10

mA

Vr = −30 V, TJ = 125_C 3.0 20

T

Vr = 10 V

50 pF

Document Number: 71685

S-32124—Rev. E, 27-Oct-03

Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1

Output Characteristics Transfer Characteristics

40

VGS = 10 thru 5 V

40

32

24

16

− Drain Current (A)I

D

8

0

0246810

VDS − Drain-to-Source Voltage (V)

4 V

3 V

On-Resistance vs. Drain Current

0.05

0.04

W )

VGS = 4.5 V

0.03

0.02

− On-Resistance (

DS(on)

0.01

r

VGS = 10 V

32

24

16

− Drain Current (A)I

D

8

0

012345

TC = 125_C

25_C

VGS − Gate-to-Source Voltage (V)

−55_C

Capacitance

750

C

600

450

300

C − Capacitance (pF)

150

iss

C

oss

C

rss

0.00 0 8 16 24 32 40

5

VDS = 15 V I

= 7 A

D

4

3

2

− Gate-to-Source Voltage (V)

GS

1

V

0

0.0 1.5 3.0 4.5 6.0 7.5

Document Number: 71685 S-32124—Rev. E, 27-Oct-03

ID − Drain Current (A)

Gate Charge

Qg − Total Gate Charge (nC)

0

0 6 12 18 24 30

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.8

VGS = 10 V I

= 7 A

D

1.6

W)

1.4

1.2

(Normalized)

− On-Resistance (r

1.0

DS(on)

0.8

0.6

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

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Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1

Source-Drain Diode Forward Voltage

50

TJ = 150_C

10

TJ = 25_C

− Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD − Source-to-Drain Voltage (V)

Threshold Voltage

0.4

ID = 250 mA

Variance (V)V

GS(th)

0.2

−0.0

−0.2

−0.4

0.10

0.08

W )

0.06

0.04

− On-Resistance (

DS(on)

r

0.02

0.00 0246810

120

100

80

60

Power (W)

40

On-Resistance vs. Gate-to-Source Voltage

ID = 7 A

VGS − Gate-to-Source Voltage (V)

Single Pulse Power, Junction-to-Ambient

−0.6

−0.8

−50 −25 0 25 50 75 100 125 150

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4

TJ − Temperature (_C)

100

r

DS(on)

10

1

I

D(on)

Limited

− Drain Current (A)I

D

0.1

0.01

0.1 1 10 100

Safe Operating Area

Limited

TC = 25_C

Single Pulse

BV

Limited

DSS

VDS − Drain-to-Source Voltage (V)

20

0

I

DM

0.001

Limited

1 ms

10 ms

100 ms

1 s

10 s dc

0.01

Time (sec)

Document Number: 71685

S-32124—Rev. E, 27-Oct-03

1

100.1

Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

−4

Duty Cycle = 0.5

0.2

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

2

t

thJA

100

thJA

t

1

2

= 90_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−3

10

−2

10

−1

10

1 10 600

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

0.1

Thermal Impedance

Normalized Effective Transient

0.01

10

−4

0.1

0.05

0.02

Single Pulse

−3

10

−2

10

−1

Square Wave Pulse Duration (sec)

11010

Document Number: 71685 S-32124—Rev. E, 27-Oct-03

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Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2

40

VGS = 10 thru 4 V

32

24

16

− Drain Current (A)I

D

8

0

0246810

VDS − Drain-to-Source Voltage (V)

3 V

On-Resistance vs. Drain Current

0.05

0.04

W )

0.03

VGS = 4.5 V

0.02

Output Characteristics Transfer Characteristics

− On-Resistance (r

DS(on)

0.01

VGS = 10 V

40

32

24

16

− Drain Current (A)I

D

8

0

012345

1500

1200

900

600

C − Capacitance (pF)

300

TC = 125_C

25_C

−55_C

VGS − Gate-to-Source Voltage (V)

Capacitance

C

iss

C

oss

C

rss

0.00 0 8 16 24 32 40

5

4

3

2

− Gate-to-Source Voltage (V)

GS

1

V

0

0246810

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6

ID − Drain Current (A)

Gate Charge

VDS = 15 V I

= 7.4 A

D

Qg − Total Gate Charge (nC)

W)

(Normalized)

− On-Resistance (r

DS(on)

0

0 6 12 18 24 30

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.8

1.6

1.4

1.2

1.0

0.8

0.6

VGS = 10 V I

= 7.4 A

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

Document Number: 71685

S-32124—Rev. E, 27-Oct-03

Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2

Source-Drain Diode Forward Voltage

50

TJ = 150_C

10

− Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD − Source-to-Drain Voltage (V)

TJ = 25_C

Reverse Current vs. Junction Temperature

10

1

−1

1

0.10

0.08

W )

0.06

0.04

− On-Resistance (

DS(on)

r

0.02

0.00 0246810

120

100

80

On-Resistance vs. Gate-to-Source Voltage

ID = 7.4 A

VGS − Gate-to-Source Voltage (V)

Single Pulse Power, Junction-to-Ambient

−2

1

30 V

−3

− Reverse Current (mA)I

1

R

−4

1

−5

1

0 25 50 75 100 125 150

24 V

TJ − Temperature (_C)

60

Power (W)

40

20

100

r

DS(on)

10

1

I

D(on)

Limited

− Drain Current (A)I

D

0.1

0.01

0.1 1 10 100

Safe Operating Area

Limited

TC = 25_C

Single Pulse

BV

Limited

DSS

VDS − Drain-to-Source Voltage (V)

0

0.001

I

DM

Limited

1 ms

10 ms

100 ms

1 s

10 s dc

0.01

Time (sec)

1

100.1

Document Number: 71685 S-32124—Rev. E, 27-Oct-03

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Si4814DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

−4

10

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

0.2

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

2

t

thJA

100

1

t

2

= 85_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−3

10

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

−4

0.1

0.05

0.02

Single Pulse

10

−3

−2

10

−1

11010

Square Wave Pulse Duration (sec)

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Document Number: 71685

S-32124—Rev. E, 27-Oct-03

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Disclaimer

All product specifications and data are subject to change without notice.

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