Datasheet si4814bd Datasheet

Si4814BDY

e

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

VDS (V) R

Channel-1

30

Channel-2

DS(on)

0.018 at V

0.023 at V

0.018 at V

0.022 at V

(Ω)

GS

= 10 V

= 4.5 V

= 10 V

= 4.5 V

I

D

(A)

10

8.5

10.5

9.3

a

Qg (Typ.)

6.6

8.9

FEATURES

• Halogen-free According to IEC 61249-2-21 Available

• LITTLE FOOT

• 100 % R

®

Plus Integrated Schottky

Tested

g

APPLICATIONS

• ADC/DC Converters

SCHOTTKY PRODUCT SUMMARY

VDS (V)

30 0.50 V at 1.0 A 2.0

D

1

D

2

1

G

3

2

S

4

2

Ordering Information:

VSD (V)

Diode Forward Voltage

SO-8

G

8

1

S1/D

7

6

5

Top View

Si4814BDY-T1-E3 (Lead (Pb)-free) Si4814BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S1/D

2

IF (A)

- Notebook

N-Channel 1

N-Channel 2

G

1

MOSFET

G

2

MOSFET

D

1

S1/D

2

Schottky Diod

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Channel-1 Channel-2 Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a,b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

PulseD Source-Drain Current

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s.

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

= 25 °C

T

A

L = 0.1 mH

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

10 10.5

I

D

I

DM

I

S

I

SM

I

AS

E

AS

7.5

a ,b, c

6

40 40

1.7

40 40

3.3 3.5

P

D

2.1 2.2

1.9

1.2

, T

T

J

stg

30

20

88.3

a, b, c

7.8

6.3

a, b, c

33.2

a, b, c

1.8

a, b, c

15

11.2 mJ

a, b, c

2.0

1.3

a, b, c

- 55 to 150 °C

V

A

W

Document Number: 73278 S09-0394-Rev. C, 09-Mar-09

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1

Si4814BDY

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2

Parameter

Maximum Junction-to-Ambient

a

t ≤ 10 s

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

Static

Drain-Source Breakdown Voltage

Temperature Coefficient ΔVDS/T

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

V

I

V

D(on)

b

R

DS(on)

g

fs

V

SD

Q

g

V

Q

gs

Q

gd

R

g

DS

V

DS

Symbol

R

thJA

R

thJF

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 30 V, V

DS

= 30 V, V

DS

V

GS

DS

GS

= 0 V, TJ = 85 °C

GS

= 5 V, V

GS

= 10 V, ID = 10 A

= 10 V, ID = 10.5 A

= 4.5 V, ID = 8.5 A

= 4.5 V, ID = 9.3 A

VDS = 15 V, ID = 10 A

V

= 15 V, ID = 10.5 A

DS

IS = 1.7 A, V

I

= 1 A, V

S

GS

Channel-1

= 15 V, V

= 4.5 V, ID = 10 A

GS

Channel-2

= 15 V, V

= 4.5 V, ID = - 10.5 A

GS

54 65 47 60

32 38 30 35

Ch-1 30

Ch-2 30

Ch-1 24

Ch-2 25

Ch-1 - 6

Ch-2 - 6

Ch-1 1.5 3.0

Ch-2 1.5 2.7

Ch-1 100

Ch-2 100

GS

= 0 V

Ch-1 1

Ch-2 100

Ch-1 15

Ch-2 2000

= 10 V

Ch-1 20

Ch-2 20

Ch-1 0.0145 0.018

Ch-2 0.015 0.018

Ch-1 0.019 0.023

Ch-2 0.018 0.022

Ch-1 30

Ch-2 35

= 0 V

Ch-1 0.75 1.1

Ch-2 0.47 0.5

Ch-1 6.6 10

Ch-2 8.9 14

Ch-1 2.9

Ch-2 3.4

Ch-1 2.3

Ch-2 2.4

Ch-1 0.5 1.9 2.9

Ch-2 0.5 2.3 3.5

a

Max. Unit

Unit Typ. Max. Typ. Max.

°C/W

V

mV/°C

V

nA

µA

A

Ω

S

V

nC

Ω

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Document Number: 73278

S09-0394-Rev. C, 09-Mar-09

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.

Dynamic

Tu r n - O n D el a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

a

t

d(on)

t

d(off)

Q

t

r

I

D

I

t

f

t

rr

D

I

Channel-1

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

= 10 V, Rg = 6 Ω

GEN

Channel-2

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

= 10 V, Rg = 6 Ω

GEN

IF = 1.3 A, dI/dt = 100 A/µs

= 2.2 A, dI/dt = 100 µA/µs

F

IF = 1.3 A, dI/dt = 100 A/µs

rr

t

a

t

b

I

= 2.2 A, dI/dt = 100 µA/µs

F

IF = 1.3 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 µA/µs

F

IF = 1.3 A, dI/dt = 100 A/µs

I

= 2.2 A, dI/dt = 100 µA/µs

F

Ch-1 8 15

Ch-2 9 15

Ch-1 11 18

Ch-2 13 20

Ch-1 21 32

Ch-2 27 40

Ch-1 6 10

Ch-2 9 15

Ch-1 28 40

Ch-2 24 35

Ch-1 17

Ch-2 12

Ch-1 12

Ch-2 11

Ch-1 16

Ch-2 13

Si4814BDY

Vishay Siliconix

a

Max. Unit

ns

nC

ns

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward Voltage Drop

V

F

IF = 1.0 A

I

= 1.0 A, TJ = 125 °C

F

VR = 30 V

Maximum Reverse Leakage Current

Junction Capacitance

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and fun ctional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

I

rm

C

T

V

= 30 V, TJ = 100 °C

R

V

= - 30 V, TJ = 125 °C

R

VR = 10 V

0.47 0.50

0.36 0.42

0.004 0.100

0.7 10

3.0 20

50 pF

V

mA

Document Number: 73278 S09-0394-Rev. C, 09-Mar-09

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Si4814BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

35

30

25

20

15

– Drain Current (A)I

D

10

5

0

0.00 0.30 0.60 0.90 1.20 1.50

– Drain-to-Source Voltage (V)

V

DS

VGS = 10 thru 5 V

Output Characteristics

0.025

0.022

VGS = 4.5 V

0.019

4 V

3 V

40

35

30

25

20

15

– Drain Current (A)I

D

10

5

0

012345

V

TC = 125 °C

25 °C

– Gate-to-Source Voltage (V)

GS

- 55 °C

Transfer Characteristics

1050

900

750

600

C

iss

0.016

– On-Resistance (Ω)

DS(on)

0.013

R

0.010 0 5 10 15 20 25 30 35 40

ID – Drain Current (A)

VGS = 10 V

On-Resistance vs. Drain Current

6

ID = 7.5 A

5

VDS = 10 V

4

3

2

– Gate-to-Source Voltage (V)

GS

V

1

0

0123456789

Qg – Total Gate Charge (nC)

VDS = 15 V

Gate Charge

450

C – Capacitance (pF)

300

150

0

1.6

1.4

1.2

– On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

C

oss

C

rss

0 6 12 18 24 30

VDS – Drain-to-Source Voltage (V)

Capacitance

VGS = 10 V and 4.5 V I

= 7.5 A

D

– Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Document Number: 73278

S09-0394-Rev. C, 09-Mar-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

0.05

Si4814BDY

Vishay Siliconix

10

1

– Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ = 150 °C

TJ = 25 °C

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.4

Variance (V)V

GS(th)

0.2

0.0

- 0.2

- 0.4

ID = 250 µA

– On-Resistance (Ω)

DS(on)

R

Power (W)

0.04

0.03

ID = 7.5 A

0.02

0.01

0.00 0246810

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

120

100

80

60

40

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ – Temperature (°C)

Threshold Voltage

100

Limited by R

10

1

I

Limited

– Drain Current (A)I

D

0.1

0.01

0.1 1 10 100

* V

GS

DS(on)*

D(on)

TC = 25 °C

Single Pulse

BVDSS Limited

V

–> Drain-to-Source Voltage (V)

DS

minimum VGS at which R

Safe Operating Area

20

0

0.001

0.01

Time (s)

Single Pulse Power, Junction-to-Ambient

I

Limited

DM

1 ms

10 ms

100 ms

1 s 10 s

DC

is specified

DS(on)

1

100.1

Document Number: 73278 S09-0394-Rev. C, 09-Mar-09

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Si4814BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.01 10

2

0.05

0.02

Single Pulse

- 4

-3

10

-2

10

-1

10

1 10 600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Thermal Impedance

Normalized Effective Transient

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

100

thJA

t

1

t

2

= 90 °C/W

(t)

0.1

Thermal Impedance

Normalized Effective Transient

0.01

1

Duty Cycle = 0.5

0.2

0.1

-

4

10

Single

0.05

0.02

Pulse

-

3

10

-

2

10

-

1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

11010

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Document Number: 73278

S09-0394-Rev. C, 09-Mar-09

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4814BDY

Vishay Siliconix

40

35

30

25

20

15

– Drain Current (A)I

D

10

5

0

0.0 0.3 0.6 0.9 1.2 1.5

– Drain-to-Source Voltage (V)

V

DS

VGS = 10 thru 4 V

Output Characteristics

0.025

0.022

0.019

0.016

– On-Resistance (Ω)R

DS(on)

0.013

VGS = 4.5 V

VGS = 10 V

3 V

40

35

30

25

20

15

– Drain Current (A)I

D

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

– Gate-to-Source Voltage (V)

V

GS

TC = 125 °C

25 °C

Transfer Characteristics

1400

C

iss

1120

840

560

C – Capacitance (pF)

280

C

rss

C

oss

- 55 °C

0.010 0 5 10 15 20 25 30 35 40

On-Resistance vs. Drain Current

6

ID = 7.8 A

5

4

3

2

– Gate-to-Source Voltage (V)

GS

1

V

0

0.0 2.2 4.4 6.6 8.8 11.0

Document Number: 73278 S09-0394-Rev. C, 09-Mar-09

ID – Drain Current (A)

VDS = 10 V

VDS = 15 V

Qg – Total Gate Charge (nC)

Gate Charge

0

0 5 10 15 20 25 30

VDS – Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 10 V and 4.5 V

= 7.8 A

I

1.4

1.2

1.0

– On-Resistance

(Normalized)

DS(on)

R

0.8

0.6

D

- 50 - 25 0 25 50 75 100 125 150

T

– Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Si4814BDY

Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

40

0.05

10

1

– Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ = 150 °C

TJ = 25 °C

– Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

10

1

-1

10

-2

10

30 V

-3

– Reverse Current (mA)I

10

R

-4

10

24 V

– On-Resistance (Ω)

DS(on)

R

Power (W)

0.04

0.03

ID = 7.8 A

0.02

0.01

0.00 0246810

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

80

60

40

20

-5

10

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0 25 50 75 100 125 150

TJ – Temperature (°C)

Reverse Current vs. Junction Temperature

100

Limited by R

10

1

I

D(on)

Limited

– Drain Current (A)I

D

0.1

0.01

TC = 25 °C

Single Pulse

0.1 1 10 100 V

DS

minimum VGS at which R

* V

GS

0

0.001

DS(on)

I

is specified

*

DS(on)

BVDSS Limited

–> Drain-to-Source Voltage (V)

Safe Operating Area

0.01

Time (s)

1

Single Pulse Power, Junction-to-Ambient

Limited

DM

1 ms

10 ms

100 ms

1 s

10 s dc

Document Number: 73278

S09-0394-Rev. C, 09-Mar-09

100.1

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

Si4814BDY

Vishay Siliconix

0.1

Thermal Impedance

Normalized Effective Transient

0.01

0.1

Thermal Impedance

Normalized Effective Transient

0.2

0.1

0.05

0.02

Single Pulse

-

4

10

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Notes:

P

DM

t

1

t

2

t

thJA

100

1

t

2

= 85 °C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

3

-

10

-

2

10

-

1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.01

-

4

10

Single Pulse

10

-

3

-

2

10

-

1

11010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73278

Document Number: 73278

.

www.vishay.com

S09-0394-Rev. C, 09-Mar-09

9

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192 11-Sep-06

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1

VISHAY SILICONIX

TrenchFET® Power MOSFETs

Application Note 808

Mounting LITTLE FOOT®, SO-8 Power MOSFETs

Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use

integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and

0.050

1.27

design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the

0.027

0.69

0.07

1.98

Figure 2. Dual MOSFET SO-8 Pad Pattern

basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package.

In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The

The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose.

total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board.

Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder

0.288

7.3

connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the

0.050

1.27

0.027

0.69

0.078

1.98

0.2

5.07

0.196

5.0

Figure 1. Single MOSFET SO-8 Pad

Pattern With Copper Spreading

Document Number: 70740 www.vishay.com Revision: 18-Jun-07 1

drain pins, the solder mask generation occurs automatically.

A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least

0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device.

0.288

7.3

8

0.2

5.07

With Copper Spreading

0.088

2.25

0.088

2.25

APPLICATION NOTE

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

0.022

(0.559)

0.246 (6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1