Datasheet si4812dy Datasheet

Si4812DY

V

Conti

t (TJ = 150_C) (MOSFET)

a

b

I

A

b

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET PRODUCT SUMMARY

V

(V) r

DS

30

0.018 @ VGS = 10 V 9

0.028 @ VGS = 4.5 V 7.3

(W) I

DS(on)

(A)

D

FEATURES

D LITTLE FOOTr Plus Power MOSFET

D 100% R

Tested

g

SCHOTTKY PRODUCT SUMMARY

VSD (V)

V

(V)

DS

30 0.50 V @ 1.0 A 1.4

SD

S

SD

G

Diode Forward Voltage

SO-8

1

2

3

4

Top View

I

(A)

F

8

7

6

5

Ordering Information:

D

Si4812DY Si4812DY-T1 (with Tape and Reel) Si4812DY—E3 (Lead (Pb)-Free) Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

D

G

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Limit

Parameter Symbol

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET) V

=

nuous Drain Curren

Pulsed Drain Current (MOSFET) I

Continuous Source Current (MOSFET Diode Conduction)

Average Foward Current (Schottky) I

Pulsed Foward Current (Schottky) I

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range TJ, T

_

a,

TA = 25_C

b

,

TA = 70_C

a, b

TA = 25_C 2.5 1.4

TA = 70_C

TA = 25_C

TA = 70_C 1.3 0.8

V

P

DM

I

FM

DS

GS

D

S

F

D

stg

10 sec Steady State

30

"20

9

7.5 5.6

50

2.1 1.2

1.4 0.8

30

1.6 0.9

2.0 1.2

−55 to 150 _C

D

Schottky Diode

S

Unit

V

6.9

W

THERMAL RESISTANCE RATINGS

Parameter Device Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (t v 10 sec)

Maximum Junction-to-Ambient (t = steady state)

Notes a. Surface Mounted on FR4 Board. b. t v 10 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 71775 S-41426—Rev. G, 26-Jul-04

a

MOSFET 40 50

Schottky

MOSFET

Schottky 85 100

R

thJA

50 60

72 90

_C/W

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1

Si4812DY

(

y)

(MOSFET + Schottky)

DSS

VDD = 15 V, RL = 15 W

Vishay Siliconix

MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current

MOSFET + Schottk

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Schottky Diode Forward Voltage

Dynamic

b

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

GS(th)

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

g

r

f

rr

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= 250 mA 1 3 V

D

"100 nA

VDS = 30 V, VGS = 0 V 0.004 0.100

VDS = 30 V, VGS = 0 V, TJ = 100_C 0.7 10

VDS = 30 V, VGS = 0 V, TJ = 125_C 3.0 20

VDS w 5 V, VGS = 10 V 20 A

VGS = 10 V, ID = 9 A 0.012 0.018

VGS = 4.5 V, ID = 7.3 A

0.019 0.028

VDS = 15 V, ID = 9 A 23 S

IS = 1.0 A, VGS = 0 V 0.45 0.50

IS = 1.0 A, VGS = 0 V, TJ = 125_C 0.33 0.42

13 24

V

= 15 V, VGS = 5 V, ID = 9 A 4 nC

DS

5.7

0.2 2.4 W

16 25

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

GEN

= 10 V, Rg = 6 W

10 20

35 50

13 20

IF = 1.0 A, di/dt = 100 A/ms 35 70

mA

W

V

ns

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Document Number: 71775

S-41426—Rev. G, 26-Jul-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4812DY

Vishay Siliconix

50

VGS = 10 thru 5 V

40

30

20

− Drain Current (A)I

D

10

0

012345

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.10

W )

0.08

0.06

− On-Resistance (r

0.04

Output Characteristics Transfer Characteristics

DS(on)

0.02

VGS = 4.5 V

VGS = 10 V

4 V

3 V

50

40

30

20

− Drain Current (A)I

D

10

0

012345

VGS − Gate-to-Source Voltage (V)

TC = 125_C

25_C

−55_C

Capacitance

1800

1500

C

iss

1200

900

C

600

C − Capacitance (pF)

300

oss

C

rss

0.00 0 1020304050

10

VDS = 15 V I

= 9 A

8

6

4

− Gate-to-Source Voltage (V)

GS

2

V

0

Document Number: 71775 S-41426—Rev. G, 26-Jul-04

D

0 5 10 15 20 25

Qg − Total Gate Charge (nC)

ID − Drain Current (A)

Gate Charge

0

0 5 10 15 20 25 30

V

− Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

1.6

VGS = 10 V I

= 9 A

1.4

1.2

− On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

0.6

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

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Si4812DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

50

10

1

− Source Current (A)I

S

0.1

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.10

TJ = 150_C

TJ = 25_C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

W )

− On-Resistance (r

DS(on)

0.08

0.06

ID = 9.0 A

0.04

0.02

0.00 0246810

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Reverse Current (Schottky)

20

50

Single Pulse Power (MOSFET)

10

40

1

30 V

30

0.1

0.01

− Reverse Current (mA)I

R

0.001

0.0001 0 255075100

2

1

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

Single Pulse

0.01

−4

10

10 V

20 V

TJ − Junction Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)

−3

10

−2

10

125 150

−1

10

Square Wave Pulse Duration (sec)

Power (W)

1

20

10

0

6001001010.10.01

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

1

t

2

= 72_C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

10 100 600

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Document Number: 71775

S-41426—Rev. G, 26-Jul-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4812DY

Vishay Siliconix

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

Thermal Impedance

0.02

Normalized Effective Transient

0.01

−4

10

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−3

10

−2

10

−1

10

Square Wave Pulse Duration (sec)

11030

t

1

t

2

t

1

t

2

= 85_C/W

thJA

(t)

thJA

Document Number: 71775 S-41426—Rev. G, 26-Jul-04

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