Datasheet si4810bd Datasheet

Si4810BDY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET PRODUCT SUMMARY

VDS (V) r

30

0.0135 at V

0.020 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V

GS

SCHOTTKY PRODUCT SUMMARY

VDS (V)

30 0.53 at 3.0 A 3.8

Diode Forward Voltage

V

(V)

SD

(A)

D

10

8

I

(A)

F

FEATURES

• TrenchFET® Power MOSFETS

• Fast Switching Speed

• Low Gate Charge

• 100 % UIS and R

Tested

g

APPLICATIONS

• DC-DC Logic Level

• Low Voltage and Battery Powered Applications

D

RoHS*

COMPLIANT

SO-8

1

S

2

3

G

4

Top View

DS

8

D

7

6

5

Ordering Information:

DS

Si4810BDY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free)

D

G

N-Channel MOSFET

Schottky Diode

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 sec Steady State Unit

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky) 30

Gate-Source Voltage (MOSFET)

TA = 25 °C

Continuous Drain Current (T

= 150 °C) (MOSFET)

J

a

= 70 °C

T

A

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

a

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

a

L = 0.1 mH

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

T

= 70 °C

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

I

F

I

FM

I

AS

E

AS

10 7.5

2.3 1.25

3.8 2.4

2.5 1.38

P

D

1.6 0.88

2.0 1.31

1.3 0.84

T

, T

J

stg

30

V

± 20

86

50

A

40

20

20 mJ

W

- 55 to 150 °C

Pb-free

Available

THERMAL RESISTANCE RATINGS

Parameter Device Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (t ≤ 10 sec)

a

Maximum Junction-to-Ambient (t = Steady State)

Maximum Junction-to-Foot (t = Steady State)

a

MOSFET

Schottky 44 60

MOSFET 73 90

R

thJA

Schottky 77 95

MOSFET

Schottky 24 30

R

thJF

Notes: a. Surface Mounted on FR4 Board. For SPICE model information vis the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72229 S-70138-Rev. C, 22-Jan-07

36 50

°C/W

17 21

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1

Si4810BDY

Vishay Siliconix

MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current (MOSFET and Schottky)

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Schottky Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

I

S

V

I

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 10 A

GS

V

= 4.5 V, ID = 5 A

GS

= 0 V

GS

= 0 V, TJ = 100 °C

= 0 V, TJ = 125 °C

= 10 V

GS

VDS = 15 V, ID = 10 A

IS = 3.0 A, V

= 3.0 A, V

= 15 V, V

DS

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

D

GS

GEN

= 0 V

GS

= 0 V, TJ = 125 °C

= 5.0 V, ID = 10 A

GS

= 10 V, Rg = 6 Ω

IF = 3.0 A, di/dt = 100 A/µs

13V

± 100 nA

0.007 0.100

1.5 10

mA

6.5 20

20 A

0.0105 0.0135

0.016 0.020

Ω

25 S

0.485 0.53

0.420 0.47

V

14.5 22

6.3

nCGate-Source Charge

4.7

0.2 0.55 0.9 Ω

17 30

13 20

45 90

ns

15 25

36 70

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72229

S-70138-Rev. C, 22-Jan-07

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4810BDY

Vishay Siliconix

50

40

30

20

- Drain Current (A)I

D

10

0

0123 45

VGS = 10 thru 5 V

- Drain-to-Source Voltage (V)

V

DS

4 V

Output Characteristics

0.040

)

0.032

0.024

VGS = 4.5 V

- On-Resistance (

0.016

VGS = 10 V

r

DS(on)

0.008

3 V

50

40

30

20

- Drain Current (A)I

D

10

0

0123 45

V

GS

TC = 125 °C

25 °C

- 55 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

2500

C

(MOSFET)

2000

1500

1000

C - Capacitance (pF)

500

C

(MOSFET)

rss

iss

C

(MOSFET and Schottky)

oss

0.000 01020304050

On-Resistance vs. Drain Current

6

VDS = 15 V

= 10 A

I

D

5

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0 3 6 9 12 15 18

Document Number: 72229 S-70138-Rev. C, 22-Jan-07

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

Gate Charge

- On-Resistance

DS(on)

r

0

048 12 16 20

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 10 V

= 10 A

I

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

(Normalized)

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

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Si4810BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- Source Current (A)I

S

0.1

0.01

- Reverse Curent (mA)

R

I

0.001

50

10

0.1

TJ = 150 °C

TJ = 25 °C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

SD

)V( egatloV niarD-ot-ecruoS -

Source-Drain Diode Forward Voltage

30

10

1

30 V

10 V

20 V

)

- On-Resistance (r

DS(on)

Power (W)

0.06

0.05

0.04 ID = 9.0 A

0.03

0.02

0.01

0.00

02468 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

50

40

30

20

10

0.0001

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0 25 50 75 100

TJ - Temperature (°C)

Reverse Current (Schottky)

- Drain Current (A)I

D

125 150

100

Limited

by r

DS(on)

10

1

0.1

0.01

0.1 1 10 100

TC = 25 °C

Single Pulse

VDS - Drain-to-Source Voltage (V)

0

0.01

1 ms

10 ms

100 ms

1 s

10 s

dc

Safe Operating Area, Junction-to-Case

1

10 10000.1

Time (sec)

Single Pulse Power

Document Number: 72229

S-70138-Rev. C, 22-Jan-07

100

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

Si4810BDY

Vishay Siliconix

Normalized Effective Transient

Thermal Impedance

0.1

0.01

10

2

1

0.1

0.2

0.1

0.05

0.02

Single Pulse

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

= 70 °C/W

(t)

00601110

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-3

10

-2

10

-1

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.01

Single Pulse

-4

10

-3

10

-2

10

-1

01110

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72229

Document Number: 72229

www.vishay.com

S-70138-Rev. C, 22-Jan-07

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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