Datasheet SI4800 Datasheet (Philips)

M3D315

1. Product proﬁle

1.1 Description

1.2 Features

1.3 Applications

SI4800

N-channel TrenchMOS™ logic level FET

Rev. 02 — 17 February 2004 Product data

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

■ Low gate charge ■ Surface mounted package

■ Low on-state resistance ■ Fast switching.

■ Portable appliances ■ Notebook computers

■ Lithium-ion battery chargers ■ DC-to-DC converters.

1.4 Quick reference data

■ VDS≤ 30 V ■ ID≤ 9A

■ P

≤ 2.5 W ■ R

tot

DSon

2. Pinning information

Table 1: Pinning - SOT96-1 (SO-8), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1,2,3 source (s) 4 gate (g) 5,6,7,8 drain (d)

8

1

Top view MBK187

SOT96-1 (SO8)

5

4

≤ 18.5 mΩ

g

MBB076

d

s

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

SI4800 SO8 plastic small outline package; 8 leads SOT96-1

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 30 V gate-source voltage (DC) - ±20 V drain current T

peak drain current T total power dissipation T

=25°C; pulsed; tp≤ 10 s;

amb

=70°C; pulsed; tp≤ 10 s;

T

amb

=25°C; pulsed; tp≤ 10 µs;

amb

=25°C; pulsed; tp≤ 10 s;

amb

=70°C; pulsed; tp≤ 10 s;

T

amb

Figure 2 and 3 -9A Figure 2 -7A

Figure 3 -40A Figure 1 - 2.5 W Figure 1 - 1.6 W

storage temperature −55 +150 °C junction temperature −55 +150 °C

source (diode forward) current T

=25°C; pulsed; tp≤ 10 s - 2.3 A

amb

9397 750 12899

Product data Rev. 02 — 17 February 2004 2 of 12

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

T

amb

03aa11

(°C)

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×= I

Fig 1. Normalized total power dissipation as a

function of ambient temperature.

2

10

T

amb

03aa19

(°C)

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------

I

D25C

()

100%×=

°

Fig 2. Normalized continuous drain current as a

function of ambient temperature.

03ap01

I

(A)

10

1

10

T

amb

D

-1

-2

Limit R

DSon

-1

10

=25°C; IDM is single pulse.

= V

DS

/ I

D

DC

1 10 10

tp = 10 µs

1 ms

10 ms

100 ms

10 s

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

9397 750 12899

Product data Rev. 02 — 17 February 2004 3 of 12

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from junction to ambient mounted on a printed-circuit board;

minimum footprint; tp≤ 10 s;

Figure 4

5.1 Transient thermal impedance

--50K/W

2

10

1

10

T

amb

-1

-2 10

=25°C

δ = 0.5

0.2

0.1

0.05

0.02

-4

single pulse

-3

10

P

t

p

-2

10

-1

1 10 10

2

Z

th(j-amb)

(K/W)

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.

03af83

t

p

δ =

T

t

T

3

t

10

(s)

p

9397 750 12899

Product data Rev. 02 — 17 February 2004 4 of 12

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

GS(th)

I

DSS

I

GSS

R

DSon

I

D(on)

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

gate-source threshold voltage ID= 250 µA; VDS=VGS;

Figure 9 0.8 - - V

drain-source leakage current VDS=24V; VGS=0V

=25°C --1µA

T

j

=55°C --5µA

T

j

gate-source leakage current VGS= ±20 V; VDS= 0 V - - 100 nA drain-source on-state resistance VGS= 10 V; ID=9A;

= 4.5 V; ID=7A;

V

GS

Figure 7 and 8 - 15.5 18.5 mΩ

Figure 7 - 2433mΩ

on-state drain current VDS≥ 5 V; VGS=10V 30 - - A

forward transconductance VDS=15V; ID=9A - 19 - S total gate charge ID= 8 A; VDD=15V; VGS=5V;

Figure 13 - 11.8 - nC

gate-source charge - 2.7 - nC gate-drain (Miller) charge - 5 - nC turn-on delay time VDD=15V; ID= 1.5 A; VGS=10V; RG=6Ω - 6 16 ns rise time - 7 15 ns turn-off delay time - 23 30 ns fall time - 1115ns

source-drain (diode forward) voltage IS= 7 A; VGS=0V; reverse recovery time IS= 7 A; dIS/dt = −100 A/µs; VR=30V;

Figure 12 - 0.86 1.2 V

- 2580ns

VGS=0V

9397 750 12899

Product data Rev. 02 — 17 February 2004 5 of 12

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

10

I

D

(A)

8

6

4

2

0

0 0.2 0.4 0.6 0.8 1

3 V5 V10 V

03ao99

2.8 V

2.7 V

2.5 V

VGS = 2.3 V

V

(V)

DS

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

03ap00

R

(mΩ)

80

DSon

VGS = 2.8 V

10 I (A)

VDS > ID x R

D

8

6

4

2

0

0123

=25°C and 150 °C; VDS> IDxR

j

DSon

Tj = 150 °C

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2

a

003aaa326

25 °C

VGS (V)

DSon

03aa27

60

40

20

0

0246810

3 V

4 V 5 V

10 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1.5

1

0.5

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 12899

Product data Rev. 02 — 17 February 2004 6 of 12

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

2.5

V

GS(th)

(V)

2

1.5

1

0.5

0

-60 0 60 120 180

ID= 250 µA; VDS=V

max

typ

min

GS

03aq19

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

4

10

C

(pF)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0123

03aa36

maxtypmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

003aaa328

3

10

2

-1

10

1 10 10

C

C C

VDS (V)

iss

oss rss

2

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 12899

Product data Rev. 02 — 17 February 2004 7 of 12

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

8

I

S

(A)

6

4

2

0

0.2 0.4 0.6 0.8 1

Tj = 150 °C

25 °C

003aaa329

VSD (V)

5

V

GS

(V)

4

3

2

1

0

0 5 10 15

Tj=25°C and 150 °C; VGS=0V ID= 8 A; VDD=15V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

003aaa625

QG (nC)

9397 750 12899

Product data Rev. 02 — 17 February 2004 8 of 12

Philips Semiconductors

7. Package outline

SI4800

N-channel TrenchMOS™ logic level FET

SO8: plastic small outline package; 8 leads; body width 3.9 mm

D

c

y

Z

8

pin 1 index

1

e

5

A

2

A

4

w M

b

p

SOT96-1

E

H

E

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT96-1

A

A1A2A3b

max.

0.25

1.75

0.10

0.010

0.069

0.004

p

1.45

1.25

0.057

0.049

IEC JEDEC JEITA

076E03 MS-012

0.25

0.01

0.49

0.36

0.019

0.014

0.25

0.19

0.0100

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

eHELLpQZywv θ

4.0

3.8

0.16

0.15

1.27

0.05

6.2

5.8

0.244

0.228

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

99-12-27 03-02-18

o

8

o

0

Fig 14. SOT96-1 (SO8).

9397 750 12899

Product data Rev. 02 — 17 February 2004 9 of 12

Philips Semiconductors

8. Revision history

Table 6: Revision history

Rev Date CPCN Description

02 20040217 - Product data (9397 750 12899)

Modiﬁcations:

• Updated to latest standards.

•

Section 3 “Ordering information” added.

• Section 5 “Thermal characteristics” clariﬁcation of thermal resistance table.

• Section 6 “Characteristics” typical R

• Section 6 “Characteristics” typical Q

• Section 6 “Characteristics” t

• Section 6 “Characteristics” V

• Section 6 “Characteristics” t

• Section 6 “Characteristics” Figure 5, 6, 7, 11, 12 and 13 modiﬁed.

01 20010713 - Product data (9397 750 08412)

N-channel TrenchMOS™ logic level FET

value improved.

DSon

, Qgs and Qgd values improved.

g(tot)

, tr, t

d(on)

conditions, and typical value modiﬁed.

SD

conditions and typical value modiﬁed

rr

and tf conditions and typical values modiﬁed.

d(off)

SI4800

9397 750 12899

Product data Rev. 02 — 17 February 2004 10 of 12

Philips Semiconductors

9. Data sheet status

SI4800

N-channel TrenchMOS™ logic level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains datafrom the preliminary speciﬁcation. Supplementary data willbe published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2][3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.Philips Semiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.

right to make changes at anytimeinorder to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, andmakes no representationsor warranties thattheseproducts are free frompatent,copyright, or mask workrightinfringement, unless otherwise speciﬁed.

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825

9397 750 12899

Product data Rev. 02 — 17 February 2004 11 of 12

Philips Semiconductors

Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

10 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

SI4800

N-channel TrenchMOS™ logic level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 17 February 2004 Document order number: 9397 750 12899

Datasheet SI4800 Datasheet (Philips) [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Limiting values

5. Thermal characteristics

5.1 Transient thermal impedance

6. Characteristics

7. Package outline

8. Revision history

9. Data sheet status

11. Disclaimers