Page 1
N- and P-Channel 40 V (D-S) MOSFET
Si4564DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) R
N-Channel 40
P-Channel - 40
DS(on)
0.0175 at V
0.020 at V
0.021 at V
0.028 at V
(Ω)
GS
GS
= - 10 V
GS
= - 4.5 V
GS
= 10 V
= 4.5 V
I
D
- 9.2
- 7.4
(A)
10
9.2
a
Qg (Typ.)
9.8
21.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
• 100 % R
®
Power MOSFET
and UIS Tested
g
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PCs
SO-8
S
1
1
G
2
1
S
3
2
G
4
2
Top View
Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
8
1
D
7
1
D
6
2
D
5
2
G
1
N-Channel MOSFET
D
1
G
2
S
1
S
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
= 25 °C
C
= 70 °C
T
C
T
= 25 °C
A
TA = 70 °C
= 25 °C
T
C
= 25 °C
T
A
L = 0.1 mH
= 25 °C
T
C
= 70 °C
T
C
T
= 25 °C
A
TA = 70 °C
V
DS
V
GS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
P
D
, T
T
J
stg
40 - 40
± 16 ± 20
V
10 - 9.2
8- 7.4
b, c
8.0
b, c
6.2
40 - 40
- 7.2
- 5.8
b, c
b, c
A
2.6 - 2.6
1.6
b, c
- 1.6
b, c
40 - 40
10 - 20
520mJ
3.1 3.2
22.1
2
1.28
b, c
b, c
2
1.28
b, c
b, c
W
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
N-Channel P-Channel
Parameter Symbol
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain) Steady State
R
thJA
R
thJF
Typ. Max. Typ. Max.
50 62.5 47 62.5
30 40 29 38
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
= 25 °C.
C
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Unit
°C/W
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1
Page 2
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient ΔVDS/T
DS
V
Temperature Coefficient ΔV
GS(th)
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
a
b
b
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
VGS = 0 V, ID = 250 µA
V
= 0 V, ID = - 250 µA
GS
ID = 250 µA
J
I
= - 250 µA
D
ID = 250 µA
I
= - 250 µA
D
V
= VGS, ID = 250 µA
DS
V
= VGS, ID = - 250 µA
DS
VDS = 0 V, VGS = ± 16 V
V
= 0 V, VGS = ± 20 V
DS
V
= 40 V, V
DS
V
= - 40 V, V
DS
V
= 40 V, V
DS
V
= - 40 V, V
DS
V
V
GS
= 5 V, V
V
DS
= - 5 V, V
DS
V
= 10 V, ID = 8 A
GS
V
= - 10 V, ID = - 8 A
GS
V
= 4.5 V, ID = 5 A
GS
= - 4.5 V, ID = - 5 A
GS
= 0 V
GS
= 0 V
GS
= 0 V, TJ = 55 °C
= 0 V, TJ = 55 °C
GS
= 10 V
GS
= - 10 V
GS
VDS = 15 V, ID = 8 A
V
= - 15 V, ID = - 8 A
DS
N-Channel
V
= 20 V, V
DS
= 0 V, f = 1 MHz
GS
P-Channel
V
= - 20 V, V
DS
VDS = 20 V, V
V
= - 20 V, V
DS
= 0 V, f = 1 MHz
GS
= 10 V, ID = 10 A
GS
= - 10 V, ID = - 10 A
GS
N-Channel
V
= 20 V, V
DS
= 4.5 V, ID = 10 A
GS
P-Channel
V
= - 20 V, V
DS
= - 4.5 V, ID = - 10 A
GS
f = 1 MHz
N-Ch 40
P-Ch - 40
N-Ch 40
P-Ch - 34
N-Ch - 4.1
P-Ch 5.0
N-Ch 0.8 2.0
P-Ch - 1.2 - 2.5
N-Ch ± 100
P-Ch ± 100
N-Ch 1
P-Ch - 1
N-Ch 10
P-Ch - 10
N-Ch 20
P-Ch - 20
N-Ch 0.0145 0.0175
P-Ch 0.0175 0.021
N-Ch 0.017 0.020
P-Ch 0.0232 0.028
N-Ch 27
P-Ch 25
N-Ch 855
P-Ch 2000
N-Ch 120
P-Ch 240
N-Ch 48
P-Ch 202
N-Ch 20.5 31
P-Ch 41.5 63
N-Ch 9.8 15
P-Ch 21.7 33
N-Ch 2.6
P-Ch 5.6
N-Ch 2.6
P-Ch 9.8
N-Ch 0.3 1.5 3.0
P-Ch 1.3 6.4 12.8
Typ .
a
Max. Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
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2
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Page 3
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
a
Parameter Symbol Test Conditions Min.
Dynamic
Tu r n - O n Delay T i m e
Rise Time
Turn-Off Delay Time
Fall Time
Tu r n - O n Delay T i m e
Rise Time
Turn-Off Delay Time
Fall Time
a
t
d(on)
t
d(off)
t
d(on)
t
d(off)
t
r
≅ 10 A, V
I
D
≅ - 10 A, V
I
t
f
D
t
r
I
≅ 10 A, V
D
≅ - 10 A, V
I
t
f
D
N-Channel
V
= 20 V, RL = 2 Ω
DD
= 10 V, Rg = 1 Ω
GEN
P-Channel
V
= - 20 V, RL = 2 Ω
DD
= - 10 V, Rg = 1 Ω
GEN
N-Channel
V
= 20 V, RL = 2 Ω
DD
= 4.5 V, Rg = 1 Ω
GEN
P-Channel
V
= - 20 V, RL = 2 Ω
DD
= - 4.5 V, Rg = 1 Ω
GEN
N-Ch 7 14
P-Ch 9 18
N-Ch 10 20
P-Ch 9 18
N-Ch 18 36
P-Ch 50 90
N-Ch 9 18
P-Ch 14 28
N-Ch 11 22
P-Ch 42 75
N-Ch 15 30
P-Ch 40 70
N-Ch 23 46
P-Ch 40 70
N-Ch 13 26
P-Ch 15 30
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
TC = 25 °C
IS = 2 A
I
= - 2 A
S
N-Channel
Q
rr
t
a
t
b
I
= 5 A, dI/dt = 100 A/µs, TJ = 25 °C
F
P-Channel
I
= - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C
F
N-Ch 2.6
P-Ch - 2.6
N-Ch 40
P-Ch - 40
N-Ch 0.74 1.2
P-Ch - 0.77 - 1.2
N-Ch 17 34
P-Ch 30 60
N-Ch 10 20
P-Ch 26 52
N-Ch 10
P-Ch 15
N-Ch 7
P-Ch 15
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Typ .
Max. Unit
ns
A
V
ns
nC
ns
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
www.vishay.com
3
Page 4
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
VGS=10Vthru4V
32
VGS=3V
24
16
- Drain Current (A)I
D
8
0
0.0 0.5 1.0 1.5 2.0 2.5
- Drain-to-Source Voltage (V)
V
DS
VGS=2V
Output Characteristics
0.025
0.022
0.019
VGS=4.5V
10
8
6
TC= 25 °C
4
- Drain Current (A)I
D
2
0
0.0 0.6 1.2 1.8 2.4 3.0
TC= 125 °C
- Gate-to-Source Voltage (V)
V
GS
TC= - 55 °C
Transfer Characteristics
1200
960
720
C
iss
- On-Resistance (Ω)R
0.016
DS(on)
0.013
0.010
0 1020304050
VGS=10V
ID- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID=10A
8
VDS=10V
6
VDS=20V
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0.0 4.4 8.8 13.2 17.6 22.0
Qg- Total Gate Charge (nC)
VDS=30V
Gate Charge
480
C - Capacitance (pF)
240
C
rss
0
0 8 16 24 32 40
C
oss
VDS- Drain-to-Source Voltage (V)
Capacitance
2.0
ID=8A
1.7
1.4
- On-Resistance
1.1
(Normalized)
DS(on)
R
0.8
0.5
- 50 - 25 0 25 50 75 100 125 150
- Junction Temperature (°C)
T
J
On-Resistance vs. Junction Temperature
VGS=10V
VGS=4.5V
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Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Page 5
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Si4564DY
Vishay Siliconix
100
10
TJ= 150 °C
1
0.1
- Source Current (A)I
S
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD- Source-to-Drain Voltage (V)
TJ= 25 °C
Source-Drain Diode Forward Voltage
0.4
0.2
0
0.10
ID=8A
0.08
0.06
- On-Resistance (Ω)
0.04
DS(on)
R
0.02
0.00
012345678910
VGS- Gate-to-Source Voltage (V)
TJ= 125 °C
TJ=25 °C
On-Resistance vs. Gate-to-Source Voltage
60
48
36
Variance (V)V
- 0.2
GS(th)
- 0.4
- 0.6
- 50 - 25 0 25 50 75 100 125 150
TJ- Temperature (°C)
ID= 250 μA
Threshold Voltage
100
10
1
- Drain Current (A)
D
I
0.1
0.01
0.01
Power (W)
ID=5mA
24
12
0
Single Pulse Power, Junction-to-Ambient
Limited by R
TA= 25 °C
Single Pulse
> minimum VGSat which R
*V
GS
*
DS(on)
BVDSS Limited
0.1 1 10
- Drain-to-Source Voltage (V)
V
DS
DS(on)
is specied
Safe Operating Area, Junction-to-Ambient
1ms
10 ms
100 ms
1s
10 s
DC
100
0.1
Time (s)
011100.00.01
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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5
Page 6
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
8.8
6.6
4.4
- Drain Current (A)
D
I
2.2
0.0
0 255075100125150
- Case Temperature (°C)
T
C
Current Derating*
4.0
3.2
2.4
Power (W)
1.6
0.8
0.0
0 25 50 75 100 125 150
- Case Temperature (°C)
T
C
Power Derating, Junction-to-Foot
* The power dissipation PD is based on T
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
J(max)
1.5
1.2
0.9
Power (W)
0.6
0.3
0.0
0 25 50 75 100 125 150
- Ambient Temperature (°C)
T
A
Power Derating, Junction-to-Ambient
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Page 7
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Si4564DY
Vishay Siliconix
Thermal Impedance
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient
0.1
0.01
10
1
0.1
0.01
10
0.1
0.05
0.02
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-4
Single Pulse
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
10
-2
10
Square Wave Pulse Duration (s)
-1
Normalized Thermal Transient Impedance, Junction-to-Foot
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
JM-TA=PDMZthJA
4. Surface Mounted
10
t
1
t
2
t
1
t
2
=120 °C/W
thJA
(t)
100
100010
01110
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
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Page 8
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
V
32
= 10 V thru 4 V
GS
10
8
24
16
- Drain Current (A)
D
I
8
0
0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
3 V
Output Characteristics
0.035
0.031
- On-Resistance (Ω)
DS(on)
R
0.027
0.023
0.019
VGS = 4.5 V
VGS = 10 V
6
TC = 25 °C
4
- Drain Current (A)
D
I
2
0
012345
TC = 125 °C
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
Transfer Characteristics
3100
2480
C
iss
1860
1240
C - Capacitance (pF)
C
620
oss
0.015
0 8 16 24 32 40
On-Resistance vs. Drain Current and Gate Voltage
10
8
6
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0 9 18 27 36 45
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8
ID = 10 A
ID - Drain Current (A)
VDS = 10 V
VDS = 30 V
Qg - Total Gate Charge
Gate Charge
VDS = 20 V
C
rss
0
0 8 16 24 32 40
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 8 A
1.6
1.4
1.2
- On-Resistance
(Normalized)
1.0
DS(on)
R
0.8
0.6
- 50 - 25 25 75 1250 50 100 150
TJ - Junction Temperature (°C)
VGS = 10 V
On-Resistance vs. Junction Temperature
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
VGS = 4.5 V
Page 9
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
Si4564DY
Vishay Siliconix
ID = 8 A
10
TJ = 150 °C
1
TJ = 25 °C
0.1
- Source Current (A)
S
I
0.01
0.001
0.0 0.2 0.6 1.00.4 0.8 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.5
0.2
- Variance (V)
GS(th)
V
- 0.1
ID = 250 μA
ID = 5 mA
0.08
0.06
0.04
- On-Resistance (Ω)
DS(on)
R
0.02
0.00
02 6489153710
TJ = 25 °C
VGS - Gate-to-Source Voltage (V)
TJ = 125 °C
On-Resistance vs. Gate-to-Source Voltage
50
40
30
Power (W)
20
10
- 0.4
- 50 - 25 25 75 1250 50 100 150
TJ - Junction Temperature (°C)
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Threshold Voltage
- Drain Current (A)
D
I
100
Limited by R
10
1
0.1
TA = 25 °C
Single Pulse
0.01
0.01 0.1 1 10010
* V
> minimum VGS at which R
GS
*
DS(on)
BVDSS Limited
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
0
0.001 0.01 0.1 1 10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
is specied
DS(on)
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Page 10
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
8.8
6.6
4.4
- Drain Current (A)
D
I
2.2
0
0 25 50 75 100 150125
TC - Case Temperature (°C)
Current Derating*
4.0
3.2
2.4
Power (W)
1.6
0.8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
1.5
1.2
0.9
Power (W)
0.6
0.3
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on T
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
J(max)
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Page 11
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4564DY
Vishay Siliconix
0.1
Thermal Impedance
Normalized Effective Transient
0.01
-4
10
1
0.1
Thermal Impedance
Normalized Effective Transient
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
-3
10
Single Pulse
Notes:
P
DM
1. Duty Cycle, D =
Single Pulse
-2
10
-1
10
1 10 100 1000
2. Per Unit Base = R
3. T
- TA = PDMZ
JM
4. Surface Mounted
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
t
1
t
2
t
1
t
2
= 110 °C/W
thJA
(t)
thJA
0.01
-4
10
-3
10
-2
10
-1
10
101
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65922
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
.
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11
Page 12
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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