Datasheet Si4473DY Datasheet (VISHAY)

14

Conti

t (TJ = 150_C)

a

I

A

C/W

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Si4473DY

Vishay Siliconix

P-Channel 14-V (D-S) MOSFET

PRODUCT SUMMARY

V

(V) r

DS

−

−

Ordering Information: Si4473DY

DS(on)

0.011 @ VGS = −4.5 V

0.016 @ VGS = −2.5 V −11

SD

1

S

2

SD

3

G

4

(W) I

D

−13

(A)

SO-8

8

D

7

6

D

5

Top View

Si4473DY-T1 (with Tape and Reel)
Si4473DY—E3 (Lead (Pb)-Free)
Si4473DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

FEATURES

D TrenchFETr Power MOSFET

APPLICATION

D Battery Switch for Portable Equipment

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

−13

−10 −7

−2.7 −1.36

3.0 1.5

1.9 0.95

−14

"12

−50

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJF

33 42

70 84

16 21

V

−9

W

_C/W

Document Number: 71613
S-50154—Rev. C, 31-Jan-05

www.vishay.com

1

Si4473DY

VDD = 15 V, RL = 10 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

gs

gd

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

d(on)

r

d(off)

f

rr

g

g

VDS = VGS, I

= −250 mA −0.6 1.5 V

D

VDS = 0 V, VGS = "12 V "100 nA

VDS = −14 V, VGS = 0 V −1

VDS = −14 V, VGS = 0 V, TJ = 70_C −10

VDS = −5 V, VGS = −4.5 V −30 A

VGS = −4.5 V, ID = −13 A 0.0088 0.011

VGS = −2.5 V, ID = −11 A 0.013 0.016

VDS = −17 V, ID = −13 A

50 S

IS = −2.7 A, VGS = 0 V −0.65 −1.1 V

46 70

V

= −10 V, VGS = −4.5 V, ID = −13 A 9 nC

DS

13.2

1.5 3.2 5.3 W

35 55

VDD = −15 V, RL = 10 W

ID ^ −1 A, V

GEN

= −4.5 V, Rg = 6 W

45 70

160 240

140 210

IF = −2.1 A, di/dt = 100 A/ms 55 80

mA

W

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

50

40

30

20

− Drain Current (A)I

D

10

0

0246810

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2

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

2 V

1.5 V

VDS − Drain-to-Source Voltage (V)

50

TC = −55_C

40

25_C

30

20

− Drain Current (A)I

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS − Gate-to-Source Voltage (V)

Document Number: 71613

S-50154—Rev. C, 31-Jan-05

125_C

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4473DY

Vishay Siliconix

W )

− On-Resistance (r

DS(on)

On-Resistance vs. Drain Current

0.030

0.024

0.018

0.012

0.006

0.000
0 1020304050

VGS = 2.5 V

− Drain Current (A)

I

D

VGS = 4.5 V

Gate Charge

10

VDS = 10 V
I

= 13 A

D

8

6

8000

6400

4800

3200

C − Capacitance (pF)

1600

0

048121620

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V
I

1.4

1.2

Capacitance

C

oss

C

rss

VDS − Drain-to-Source Voltage (V)

= 13 A

D

C

iss

− Gate-to-Source Voltage (V)

GS

V

− Source Current (A)I

S

4

2

0

0 20406080100

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

50

TJ = 150_C

10

TJ = 25_C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

− On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

0.6

−50 −25 0 25 50 75 100 125 150

0.05

0.04

W )

0.03

0.02

− On-Resistance (r

DS(on)

0.01

0.00
02468

T

− Junction Temperature (_C)

J

ID = 13 A

Document Number: 71613
S-50154—Rev. C, 31-Jan-05

www.vishay.com

3

Si4473DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

0.6

0.4

0.2

Variance (V)V

0.0

GS(th)

−0.2

−0.4

−50 −25 0 25 50 75 100 125 150

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

−4

10

ID = 250 mA

TJ − Temperature (_C)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Ambient

−3

10

Single Pulse Power, Junction-to-Ambient

200

160

120

Power (W)

80

40

0

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

0.1 1010.010.001

Time (sec)

t

1

t

2

thJA

t
t

thJA

100

1

2

= 70_C/W

(t)

2

1

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

0.2

0.1

0.1

Thermal Impedance

0.05

Normalized Effective Transient

0.02

Single Pulse

0.01

−4

10

−3

10

−2

10

−1

11010

Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products m ay be manufac tured at one of several qualified locations. Reliability d at a for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?71613.

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Document Number: 71613

S-50154—Rev. C, 31-Jan-05