Datasheet SI4447ADY-GE3 Datasheet (VISHAY)

New Product

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel 40 V (D-S) MOSFET

Si4447ADY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 40

0.045 at V

0.062 at V

()I

DS(on)

= - 10 V - 7.2

GS

= - 4.5 V - 6.1

GS

D

(A)

d

Qg (Typ.)

11.8 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

•TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switches, Adaptor Switch

S

- Notebook PCs

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy E

Maximum Power Dissipation

= 25 °C

T

C

= 25 °C

T

A

L = 0.1 mH

= 25 °C

T

C

= 70 °C 2.7

T

C

= 25 °C

T

A

I

P

TA = 70 °C

Operating Junction and Storage Temperature Range TJ, T

DS

GS

I

D

DM

I

AS

S

D

stg

- 40

± 20

V

- 7.2

- 5.7

a, b

- 5.5

a, b

- 4.4

- 20

A

- 3.5

a, b

- 2.1

- 10

5mJ

4.2

2.5

1.6

a, b

W

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot

Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on T

Document Number: 67189 S10-2767-Rev. A, 29-Nov-10

= 25 °C.

C

a, c

t 10 s R

Steady State

thJA

R

thJF

40 50

24 30

°C/W

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New Product

Si4447ADY

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/T

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Tur n -O n D el a y T im e t

Rise Time t

Turn-Off DelayTime t

Fall Time t

Tur n -O n D el a y T im e t

Rise Time t

Turn-Off DelayTime t

Fall Time t

DS

J

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

120

oss

95

rss

g

gs

5.2

gd

g

d(on)

r

30 60

d(off)

f

d(on)

r

28 55

d(off)

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

SM

SD

rr

a

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

I

D

I

D

IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = - 250 µA - 40 V

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA - 1.2 - 2.5 V

DS

- 42

4.6

VDS = 0 V, VGS = ± 20 V ± 100 nA

V

= - 40 V, VGS = 0 V - 1

DS

= - 40 V, V

DS

V

 - 10 V, V

GS

DS

= 0 V, TJ = 55 °C - 5

GS

= - 10 V - 10 A

GS

= - 10 V, ID = - 5 A 0.036 0.045

= - 4.5 V, ID = - 4 A 0.050 0.062

= - 10 V, ID = - 5 A 14 S

970

= - 20 V, V

DS

= - 20 V, V

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 5 A 25 38

GS

11.8 18

= - 20 V, V

= - 4.5 V, ID = - 5 A

GS

3

f = 1 MHz 1.0 5.5 11 

714

V

= - 20 V, RL = 4 

DD

 - 5 A, V

= - 10 V, Rg = 1 

GEN

12 24

918

44 80

V

DD

 - 5 A, V

= - 20 V, RL = 4 

= - 4.5 V, Rg = 1 

GEN

33 60

13 25

TC = 25 °C - 3.5

- 20

IS = - 2 A, V

= 0 V - 0.76 - 1.2 V

GS

27 50 ns

19 35 nC

14

13

mV/°C

µA



pFOutput Capacitance C

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 67189

S10-2767-Rev. A, 29-Nov-10

New Product

0.00

0.02

0.04

0.06

0.08

0.10

0 6 12 18 24 30

VGS=10V

VGS=4.5V

R

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

0

2

4

6

8

10

0.0 5.1 10.2 15.3 20.4 25.5

ID=5A

VDS=20V

VDS=30V

VDS=10V

Qg - Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Si4447ADY

Vishay Siliconix

30

VGS=10Vthru5V

24

18

12

- Drain Current (A)

D

I

6

0

0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V)

VGS=3V

Output Characteristics

VGS=4V

5

4

3

2

- Drain Current (A)

D

I

1

0

012345

TC= 25 °C

TC= 125 °C

TC= - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

1600

1280

960

C

iss

On-Resistance vs. Drain Current

Document Number: 67189 S10-2767-Rev. A, 29-Nov-10

Gate Charge

640

C - Capacitance (pF)

320

C

oss

C

rss

0

0.0 2.4 4.8 7.2 9.6 12.0

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8

ID=5A

1.5

1.2

- On-Resistance (Normalized)

DS(on)

R

0.9

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

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New Product

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1

0.01

0.001

0.1

10

100

TJ= 25 °C

TJ= 150 °C

VSD - Source-to-Drain Voltage (V)

I

S

- Source Current (A)

0.00

0.04

0.08

0.12

0.16

0.20

0246810

TJ=25 °C

TJ= 125 °C

ID=5A

R

DS(on)

- On-Resistance (Ω)

VGS - Gate-to-Source Voltage (V)

0

10

20

30

40

50

Power (W)

Time (s)

10 10000.10.010.001 1001

Si4447ADY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

0.8

0.6

ID= 250 μA

0.4

0.2

Variance (V)

GS(th)

V

0

- 0.2

- 0.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

10

ID=1mA

Limited by R

DS(on)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

*

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1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10

VDS - Drain-to-Source Voltage (V)

> minimum VGS at which R

* V

GS

Safe Operating Area

BVDSS Limited

is specied

DS(on)

1ms

10 ms

100 ms

1s 10 s DC

100

Document Number: 67189

S10-2767-Rev. A, 29-Nov-10

New Product

0

1

2

3

4

5

0 25 50 75 100 125 150

TC - Case Temperature (°C)

Power (W)

0.0

0.4

0.8

1.2

1.6

2.0

0 25 50 75 100 125 150

TA - Ambient Temperature (°C)

Power (W)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

8.0

6.4

4.8

3.2

- Drain Current (A)

D

I

1.6

0.0 0 255075100125150

TC - Case Temperature (°C)

Current Derating*

Si4447ADY

Vishay Siliconix

Power, Junction-to-Foot

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 67189 S10-2767-Rev. A, 29-Nov-10

Power Derating, Junction-to-Ambient

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

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New Product

Si4447ADY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1

Duty Cycle = 0.5

0.2

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

0.1

0.01

-4

10

1

-4

10

0.1

0.05

0.02

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-3

10

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

-2

10

-1

1

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

-2

10

Square Wave Pulse Duration (s)

-1

Normalized Thermal Transient Impedance, Junction-to-Foot

t

1

t

2

JM-TA=PDMZthJA

100

thJA

t

1

t

2

(t)

= 85 °C/W

100010

01110

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67189

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.

Document Number: 67189

S10-2767-Rev. A, 29-Nov-10

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192 11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

0.022

(0.559)

0.246 (6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

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Legal Disclaimer Notice

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Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

1

Document Number: 91000