Datasheet si4431ady Datasheet

P-Channel 30-V (D-S) MOSFET

30

Conti

t (T

150_C)

a

I

A

Si4431ADY

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

–

–

Ordering Information: Si4431ADY-T1

DS(on)

0.030 @ VGS = –10 V

0.052 @ VGS = –4.5 V –5.5

SD

1

S

2

SD

3

G

4

(W) I

D

–7.2

SO-8

8

D

7

6

D

5

Top View

Si4431ADY-T1—E3 (Lead (Pb)-free)

(A)

FEATURES

D TrenchFETr Power MOSFET

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

=

J

a

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

–7.2

–5.8 –4.2

–2.1 –1.3

2.5 1.35

1.6 0.87

–30

"20

–30

–55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJF

35 50

75 92

17 25

V

–5.3

W

_C/W

Document Number: 71803
S-51472—Rev. D, 01-Aug-05

www.vishay.com

1

Si4431ADY

V

DD

R

L

W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

gs

gd

G

d(on)

r

d(off)

f

rr

VDS = VGS, I

= –250 mA –1.0 –3.0 V

D

VDS = 0 V, VGS = "20 V "100 nA

VDS = –30 V, VGS = 0 V –1

VDS = –30 V, VGS = 0 V, TJ = 70_C –10

mA

VDS = –5 V, VGS = –10 V –30 A

VDS = –5 V, VGS = –4.5 V –7 A

VGS = –10 V, ID = –7.2 A 0.024 0.030

VGS = –4.5 V, ID = –5.0 A 0.040 0.052

VDS = –15 V, ID = –7.2 A

14 S

W

IS = –2.1 A, VGS = 0 V –0.78 –1.1 V

g

V

= –15 V, VGS = –5 V, ID = –7.2 A 4.7 nC

DS

12 20

3.7

3.1 4.7 W

12 20

VDD = –15 V, RL = 15 W

ID ^ –1 A, V

= 15 V,

GEN

= 15

= –10 V, RG = 6 W

15 20

40 60

ns

20 25

IF = –2.1 A, di/dt = 100 A/ms 30 80

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

4 V

3 V

VDS – Drain-to-Source Voltage (V)

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2

30

24

18

12

– Drain Current (A)I

D

6

0

012345

30

24

18

12

– Drain Current (A)I

D

6

TC = 125_C

25_C

–55_C

0

012345

VGS – Gate-to-Source Voltage (V)

Document Number: 71803

S-51472—Rev. D, 01-Aug-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si4431ADY

Vishay Siliconix

W )

– On-Resistance (r

DS(on)

On-Resistance vs. Drain Current

0.10

0.08

0.06

0.04

0.02

0.00
0 6 12 18 24 30

VGS = 4.5 V

– Drain Current (A)

I

D

VGS = 10 V

Gate Charge

10

VDS = 15 V
I

= 7.2 A

D

8

6

2000

1600

1200

800

C – Capacitance (pF)

400

C

rss

0

0 6 12 18 24 30

On-Resistance vs. Junction Temperature

1.6

VGS = 10 V
I

= 7.2 A

D

1.4

1.2

Capacitance

C

iss

C

oss

VDS – Drain-to-Source Voltage (V)

– Gate-to-Source Voltage (V)

GS

V

– Source Current (A)I

S

4

2

0

0 3 6 9 1215182124

Qg – Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

30

TJ = 150_C

10

TJ = 25_C

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

– On-Resistance

1.0

(Normalized)

DS(on)

r

0.8

0.6
–50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (_C)

J

0.20

W )

0.15

ID = 7.2 A

0.10

– On-Resistance (r

0.05

DS(on)

0.00
0246810

Document Number: 71803
S-51472—Rev. D, 01-Aug-05

www.vishay.com

3

Si4431ADY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

0.6

0.4

ID = 250 mA

0.2

Variance (V)V

0.0

GS(th)

–0.2

–0.4

–50 –25 0 25 50 75 100 125 150

TJ – Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

–4

10

0.05

0.02

Single Pulse

–3

10

Thermal Impedance

Normalized Effective Transient

Single Pulse Power, Junction-to-Ambient

40

32

24

Power (W)

16

8

0

–2

10

–2

10

–1

1 10 60010

Square Wave Pulse Duration (sec)

–1

1 6001010

Time (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

4. Surface Mounted

2

thJA

t
t

thJA

100

1

2

= 75_C/W

(t)

100

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

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4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

–4

10

Single Pulse

10

Normalized Thermal Transient Impedance, Junction-to-Foot

–3

–2

10

–1

Square Wave Pulse Duration (sec)

11010

Document Number: 71803

S-51472—Rev. D, 01-Aug-05

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Revision: 18-Jul-08 1