Datasheet si4413dy Datasheet

Si4413DY

T

PRODUCT SUMMARY

VDS (V) r

- 30

S

G

Ordering Information:

DS(on)

0.0095 at V

0.0145 at V

SO-8

1

2

3

4

Top View

GS

Si4413DY-T1 Si4413DY-T1-E3 (Lead (Pb)-free)

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

(Ω)I

D

(A)

= - 10 V - 13

= - 4.5 V - 10

8

D

7

6

D

5

• TrenchFET® Power MOSFET

APPLICATIONS

• Notebook

- Load switch

- Battery switch

S

G

D

P-Channel MOSFE

Vishay Siliconix

Pb-free

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 sec Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 13 - 9

- 10.5 - 7.5

- 2.7 - 1.36

- 30

± 20

- 50

3.0 1.5

1.9 0.95

- 55 to 150 °C

V

A

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 sec

Steady State 70 84

Maximum Junction-to-Foot (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

R

thJA

R

thJF

33 42

°C/W

16 21

Document Number: 72054 S-70315-Rev. B, 12-Feb-07

www.vishay.com

1

Si4413DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n De l a y Ti m e

Rise Time

Tur n - O f f D e l ay T i m e

Fall Time

Source-Drain Reverse Recovery Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

V

GS(th)

I

GSS

I

DSS

I

D(on)

a

r

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

V

DS

I

D

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 30 V, V

DS

= - 30 V, V

DS

= - 5 V, V

DS

V

= - 10 V, ID = - 13 A

GS

V

= - 4.5 V, ID = - 10 A

GS

= 0 V

GS

= 0 V, TJ = 70 °C

= - 10 V

GS

VDS = - 15 V, ID = - 13 A

IS = - 2.7 A, V

= - 15 V, V

V

= - 15 V, RL = 15 Ω

DD

≅ - 1 A, V

GEN

GS

= 0 V

GS

= - 5 V, ID = - 13 A

= - 10 V, RG = 6 Ω

IF = - 2.1 A, di/dt = 100 A/µs

- 1.0 3.0 V

± 100 nA

- 1

- 10

- 30 A

0.0075 0.0095

0.0115 0.0145

50 S

- 0.74 - 1.1 V

61 95

15.5

32

3.4 Ω

21 35

18 30

170 260

97 150

70 110

µA

Ω

nCGate-Source Charge

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

VGS = 10 thru 4 V

40

30

20

- Drain Current (A)I

D

10

3 V

0

www.vishay.com 2

012345

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

2 V

50

40

30

20

- Drain Current (A) I

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V

- Gate-to-Source V oltage (V)

GS

T C = 125 °C

25 °C

Transfer Characteristics

Document Number: 72054

S-70315-Rev. B, 12-Feb-07

- 55 °C

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4413DY

Vishay Siliconix

Ω)

- On-Resistance (r

DS(on)

- Gate-to-Source Voltage (V)

GS

V

0.020

0.016

0.012

0.008

0.004

0.000

VGS = 4.5 V

VGS = 10 V

0 1020304050

ID - Drain Current (A)

On-Resistance vs. Drain Current

10

VDS = 15 V I

= 13 A

D

8

6

4

2

7000

5600

4200

2800

C - Capacitance (pF)

1400

0

0 6 12 18 24 30

1.6

VGS = 10 V I

= 13 A

D

1.4

1.2

- On-Resistance r (Normalized)

1.0

DS(on)

0.8

C

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

C

rss

0

0 22446688110

100

10

- Source Current (A)I

1

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

Document Number: 72054 S-70315-Rev. B, 12-Feb-07

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

TJ = 25 °C

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.030

0.024

Ω)

ID = 13 A

- On-Resistance (r

DS(on)

0.018

0.012

0.006

0.000 0246810

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

www.vishay.com

3

Si4413DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.0

0.8

Variance (V)V

GS(th)

0.6

0.4

0.2

ID = 250 µA

0.0

- 0.2

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

Limited by r

10

- Drain Current (A)I

D

0.1

100

80

60

Power (W)

40

20

0

0.1 1010.010.001

Time (sec)

Single Pulse Power, Junction-to-Ambient

DS(on)

1 ms

10 ms

1

TC = 25 °C

Single Pulse

100 ms

1 s

10 s

dc

0.1

Thermal Impedance

Normalized Effective Transient

0.01

www.vishay.com 4

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-4

10

Single Pulse

0.01

0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

Safe Operating Area, Junction-to-Case

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

= 70 °C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-3

10

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 72054

S-70315-Rev. B, 12-Feb-07

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

q

)

2

1

Duty Cycle = 0.5

0.2

0.1

0.01

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10 uare Wave Pulse Duration (sec

S

Normalized Thermal Transient Impedance, Junction-to-Foot

Thermal Impedance

Normalized Effective Transient

Si4413DY

Vishay Siliconix

-1

11010

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72054.

Document Number: 72054

www.vishay.com

S-70315-Rev. B, 12-Feb-07

5

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1