Datasheet si4310bd Datasheet

Si4310BDY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

Channel-1

Channel-2

VDS (V) R

0.011 at V

30

0.016 at V

0.0085 at V

0.0095 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

= 10 V

= 4.5 V

SCHOTTKY PRODUCT SUMMARY

VDS (V)

30 0.53 V at 3 A 2

D

1

D

2

1

G

3

1

G

4

2

S

2

S

6

2

S

7

2

Ordering Information: Si4310B DY-T1-E3 (Lead (Pb)-free)

VSD (V)

Diode Forward Voltage

SO-14

S

14

1

S

13

1

D

12

2

D

11

2

D

105

2

D

9

2

D

8

2

Top View

Si4310BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

I

D

8.2

IF (A)

(A)

10

14

13

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• DC/DC Converters

- Game Stations

- Video Equipment

D

2

S

2

N-Channel 2

MOSFET

G

1

D

1

S

1

N-Channel 1

MOSFET

G

2

Schottky Diode

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Channel-1 Channel-2

Parameter Symbol 10 s Steady State 10 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

TA = 25 °C

Continuous Drain Current (T

= 150 °C)

J

a

= 70 °C

T

A

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a

TA = 25 °C

T

= 70 °C

A

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

1.28 0.73 1.9 0.94

± 20 ± 20

10 7.5 14 9.8

86117.8

40 50

1.8 1.04 2.73 1.33

2 1.14 3.0 1.47

30

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Channel-1 Channel-2 Schottky

Parameter Symbol

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 10 s

Steady State 92 110 70 72 76 93

R

thJA

R

thJF

Notes: a. Surface Mounted on 1" x 1" FR4 board.

Typ. Max. Typ. Max. Typ. Max.

5362.534354048

35 42 17 24 21 26

Unit

°C/W

V

A

W

Document Number: 73064 S09-2436-Rev. B, 16-Nov-09

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1

Si4310BDY

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ.aMax. Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

a

b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n Delay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

V

DS

= 30 V, V

= 5 V, V

DS

V

= 10 V, ID = 10 A

GS

V

= 10 V, ID = 14 A

GS

V

= 4.5 V, ID = 8.2 A

GS

V

= 4.5 V, ID = 13 A

GS

= 0 V, TJ = 85 °C

GS

VDS = 15 V, ID = 10 A

V

= 15 V, ID = 14 A

DS

IS = 1.8 V, V

I

= 2.73 V, V

S

VDS = 15 V, V

GS

= 0 V, f = 1 MHz

GS

Channel-1

V

= 15 V, V

DS

= 4.5 V, ID = 10 A

GS

Channel-2

V

= 15 V, V

DS

= 4.5 V, ID = 14 A

GS

f = 1 MHz

Channel-1

V

= 15 V, RL = 15 Ω

DD

I

≅ 1 A, V

D

= 10 V, Rg = 6 Ω

GEN

Channel-2

V

= 15 V, RL = 15 Ω

DD

≅ 1 A, V

I

D

= 10 V, Rg = 6 Ω

GEN

IF = 1.8 A, dI/dt = 100 A/µs

I

= 2.73 V, dI/dt = 100 A/µs

F

= 0 V

= 10 V

= 0 V

Ch-1 1.0 3.0

Ch-2 1.0 3.0

Ch-1 100

Ch-2 100

Ch-1 1

Ch-2 100

Ch-1 15

Ch-2 4000

Ch-1 20

Ch-2 30

Ch-1 0.009 0.011

Ch-2 0.0065 0.0085

Ch-1 0.013 0.016

Ch-2 0.0075 0.0095

Ch-1 30

Ch-2 60

Ch-1 0.76 1.1

Ch-2 0.485 0.53

Ch-1 790 1580 2370

Ch-2 1530 3060 4590

Ch-1 145 290 435

Ch-2 300 600 900

Ch-1 70 140 210

Ch-2 115 225 340

Ch-1 12 18

Ch-2 19 30

Ch-1 5.3

Ch-2 10

Ch-1 4.3

Ch-2 5

Ch-1 0.90 1.8 2.7

Ch-2 0.3 0.95 1.4

Ch-1 13 20

Ch-2 17 26

Ch-1 10 15

Ch-2 12 20

Ch-1 33 50

Ch-2 53 80

Ch-1 10 15

Ch-2 17 26

Ch-1 25 40

Ch-2 31 50

V

nA

µA

A

Ω

S

V

pF

nC

Ω

ns

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Document Number: 73064

S09-2436-Rev. B, 16-Nov-09

Si4310BDY

Vishay Siliconix

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward voltage Drop

V

F

IF = 3 A

I

= 3 A, TJ = 125 °C

F

VR = 30 V

Maximum Reverse Leakage Current

Junction Capacitance

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

I

rm

C

T

V

= 30 V, TJ = 75 °C

R

V

= 30 V, TJ = 125 °C

R

VR = 15 V

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.485 0.53

0.42 0.42

0.008 0.100

0.4 5

0.5 20

102 pF

V

mA

40

35

30

25

20

15

- Drain Current (A)I

D

10

VGS = 10 V thru 5 V

4 V

5

0

012345

- Drain-to-Source Voltage (V)

V

DS

3 V

Output Characteristics

0.020

0.016

0.012

VGS = 4.5 V

VGS = 10 V

40

35

30

25

20

15

- D r a i n Current (A)I

D

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

- Gate-to-Source Voltage (V)

V

GS

TC = 125 °C

25 °C

Transfer Characteristics

2000

C

1600

1200

iss

-55 °C

0.008

- On-Resistance (Ω)R

DS(on)

0.004

0.000 0 5 10 15 20 25 30

On-Resistance vs. Drain Current

Document Number: 73064 S09-2436-Rev. B, 16-Nov-09

ID- Drain Current (A)

800

Capacitance (pF)

C

400

C

rss

0

0 5 10 15 20 25 30

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

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Si4310BDY

Vishay Siliconix

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

8

VDS = 15 V

= 10 A

I

D

1.6

1.4

VGS = 10 V

= 10 A

I

D

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 5 10 15 20 25

Qg- Total Gate Charge (nC)

Gate Charge

30

10

- S o urce Current (A)I

S

TJ = 150 C

TJ = 25 C

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ-Junction Temperature (°C)

On-Resistance vs. Junction Temperature

0.05

ID = 10 A

0.04

0.03

0.02

- On-Resistance (Ω)R

DS(on)

0.01

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Source-Drain Diode Forward Voltage

0.4

0.2

0.0

- 0.2

Variance (V)

GS(th)

- 0.4

V

- 0.6

-0.8

- 50 - 25 0 25 50 75 100 125 150

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- Voltage (V) niarD-ot-ecruoS

V

SD

ID = 250 µA

TJ- Temperature (°C)

Threshold Voltage

0.00 02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

200

160

120

Power (W)

80

40

0

Time (s)

1100.10.001 0.01

Single Pulse Power

Document Number: 73064

S09-2436-Rev. B, 16-Nov-09

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

Limited by R *

10

DS(on)

1 ms

Si4310BDY

Vishay Siliconix

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-4

10 ms

100 ms

1 s

10 s DC

- Drain Current (A) I

1

D

0.1 TC = 25 C

Single Pulse

0.01

0.1 1 10 100

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

* V

GS

DS(on)

is specified

Safe Operating Area, Junction-to-Case

Single Pulse

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

100

t

1

t

2

= 92 C/W

(t)

00601110

2

1

Duty Cycle = 0.5

Transient

Thermal Impedance

Normalized Effective

0.1

0.2

0.1

0.05

0.02

Single Pulse

0.01

-4

10

Document Number: 73064 S09-2436-Rev. B, 16-Nov-09

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

01110

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Si4310BDY

Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

40

30

20

- Drain Current (A)I

D

10

0

VGS = 10 V thru 4 V

3 V

012345

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.015

0.012

0.009

0.006

- On-Resistance (Ω)R

DS(on)

0.003

0.000

VGS = 4.5 V

0 1020304050

ID- Drain Current (A)

On-Resistance vs. Drain Current

VGS = 10 V

50

40

30

- Drain Current (A)I

20

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Transfer Characteristics

4000

3500

3000

2500

2000

1500

- Capacitance (pF) C

1000

500

C

0

0 5 10 15 20 25 30

TC = 125 °C

25 °C

- Gate-to-Source Voltage (V)

V

GS

C

iss

C

oss

rss

VDS- Drain-to-Source Voltage (V)

Capacitance

-55 °C

6

5

4

3

2

- Gate-to-Source Voltage (V)

GS

V

1

0

0 5 10 15 20 25

www.vishay.com 6

VDS = 15 V

= 14 A

I

D

Qg- Total Gate Charge (nC)

Gate Charge

1.6

VGS = 10 V

= 14 A

I

D

- 50 - 25 0 25 50 75 100 125 150

ID- Drain Current (A)

- On-Resistance (Ω)R

DS(on)

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

Document Number: 73064

S09-2436-Rev. B, 16-Nov-09

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50

TJ = 150 °C

0.020

ID = 14 A

0.016

Si4310BDY

Vishay Siliconix

10

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-)V( egatloV niarD-ot-ecruoS

V

SD

TJ = 25 °C

Source-Drain Diode Forward Voltage

100

10

1

0.1

0.01

Reverse Current (mA)I

-

R

0.001

VDS = 30 V

VDS = 24 V

0.012

0.008

- On-Resistance (Ω)R

DS(on)

0.004

0.000 02468 10

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

200

160

120

Power (W)

80

40

0.0001 0 25 50 75 100 125 150

Reverse Current vs. Junction Temperature

Document Number: 73064 S09-2436-Rev. B, 16-Nov-09

- Temperature (°C)

T

J

100

Limited by R *

- Drain Current (A)

D

I

DS(on)

10

1

0.1

0.01

0.1 1 10 100

* V

TC = 25 C

Single Pulse

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

GS

DS(on)

Safe Operating Area, Junction-to-Case

0

1 ms

10 ms

100 ms

1 s

10 s

DC

is specified

0.01 1.0100.0

Time (s)

Single Pulse Power

110

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Si4310BDY

Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

0.2

0.1

0.05

0.02

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-4

Single Pulse

-3

10

Single Pulse

10

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

-2

10

Square Wave Pulse Duration (s)

-1

Normalized Thermal Transient Impedance, Junction-to-Foot

- TA = PDMZ

JM

t

1

t

2

t

1

t

2

= 92 C/W

thJA

(t)

thJA

100

00601110

01110

SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

1

0.1

0.01

Reverse Current (mA)

-

R

I

30 V

20 V

0.001

0.0001 0255075100

TJ- J unction Temperature (°C)

Reverse Current vs. Junction Temperature

www.vishay.com 8

125 150

Forward Current (A)

-

F

I

5

TJ = 150 °C

1

0.1

00.20.4

Forward Voltage Drop

TJ = 25 °C

0.6

VF- Forward Voltage Drop (V)

Document Number: 73064

S09-2436-Rev. B, 16-Nov-09

0.8

SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

500

400

300

200

- Junction Capacitance (pF)

T

100

C

0

0 6 12 18 24 30

VKA- R e verse Voltage (V)

Capacitance

2

1

Duty Cycle = 0.5

Si4310BDY

Vishay Siliconix

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

100

t

1

t

2

= 100 °C/W

(t)

00601110

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

0.2

0.1

0.05

0.02

-4

Single Pulse

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

Transient

0.2

0.1

Thermal Impedance

Normalized Effective

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

01110

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73064

.

Document Number: 73064 S09-2436-Rev. B, 16-Nov-09

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SOIC (NARROW): 14ĆLEAD

14 13 12 11 10 9 8

1234567

D

e

B

Package Information

Vishay Siliconix

MILLIMETERS INCHES

Dim

A

B

E

C D E

e H L

Ø

ECN: T-05766—Rev. F, 19-Sep-05

H

0.25

A

1

(GAGE PLANE)

L

DWG: 5499

C

Ø

Min Max Min Max

1.35 1.75 0.053 0.069

0.10 0.20 0.004 0.008

1

0.38 0.51 0.015 0.020

0.18 0.23 0.007 0.009

8.55 8.75 0.336 0.344

3.8 4.00 0.149 0.157

1.27 BSC 0.050 BSC

5.80 6.20 0.228 0.244

0.50 0.93 0.020 0.037

0_ 8_ 0_ 8_

ALL LEADS

0.101 mm

0.004″

Document Number: 71193 19-Sep-05

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Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1

RECOMMENDED MINIMUM PADS FOR SO-14

0.322

(8.179)

Application Note 826

Vishay Siliconix

0.047

(1.194)

Return to Index

0.246

Return to Index

(6.248)

0.022

(0.559)

0.050

(1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.028

(0.711)

0.152 (3.861)

APPLICATION NOTE

Document Number: 72607 www.vishay.com Revision: 21-Jan-08 23

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1