Datasheet si4230dy Datasheet

Dual N-Channel 30-V (D-S) MOSFET

Si4230DY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.0205 at V

30

0.026 at V

DS(on)

(Ω)

GS

GS

= 10 V

= 4.5 V

SO-8

S

1

1

G

2

1

S

3

2

G

4

2

Top View

Ordering Information: Si4230DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

8

7

6

5

a, e

I

(A)

D

D

1

D

1

D

2

D

2

Qg (Typ.)

8

8

7.3

• Halogen-free

•TrenchFET

• 100 % R

®

Power MOSFET

and UIS Tested

g

APPLICATIONS

• Low Current DC/DC

• Notebook PC

- System Power

D

1

G

1

S

1

N-Channel MOSFET

D

G

2

S

N-Channel MOSFET

2

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

FEATURES

Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T
T
TA = 70 °C

Pulsed Drain Current (10 µs Pulse Width)

Source-Drain Current Diode Current

T
T

Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy

L = 0.1 mH

T

Maximum Power Dissipation

T
T
TA = 70 °C

Operating Junction and Storage Temperature Range

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

I

SM

I

AS

E

AS

± 20

7.5

7.3

5.8

2.6

1.7

30

8

30

30
10

V

e

b, c

b, c

A

b, c

5

mJ

3.2

P

D

T

, T

J

stg

2.1

b, c

2

b, c

1.28

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.

Document Number: 68983
S-82660-Rev. A, 03-Nov-08

b, d

t ≤ 10 s

R

thJA

R

thJF

50 62.5
30 38

°C/W

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1

Si4230DY

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate Threshold Voltage

Gate Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

b

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %

V

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

DS

VDS = V

V

DS

V

DS

= 30 V, V

DS

V

V

V

, ID = 250 µA

GS

= 0 V, V

GS

= 30 V, V

= 0 V, TJ = 55 °C

GS

= 5 V, V

GS

= 10 V, ID = 8 A

GS

= 4.5 V, ID = 5 A

GS

= 15 V, ID = 8 A

DS

= ± 20 V

= 0 V

GS

= 10 V

N-Channel

V

DS

V

DS

= 15 V, V

= 15 V, V

= 0 V, f = 1 MHz

GS

= 10 V, ID = 8 A

GS

N-Channel

V

= 15 V, V

DS

= 4.5 V, ID = 8 A

GS

f = 1 MHz 0.2 1.2 2.4 Ω

N-Channel

V

= 15 V, RL = 3 Ω

DD

≅ 5 A, V

I

D

= 4.5 V, Rg = 1 Ω

GEN

N-Channel

V

= 15 V, RL = 3 Ω

DD

≅ 5 A, V

I

D

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 1 A

N-Channel

I

= 5 A, dI/dt = 100 A/µs, TJ = 25 °C

F

30 V

32

- 6

mV/°C

1.0 3.0 V

100 nA

1

10

20 A

0.0172 0.0205

0.0205 0.026

29 S

950

155

65

16.5 25

7.3 11

2.7

2.1

17 35

12 24

18 35

10 20

918

11 20

18 35

816

2.6

30

0.74 1.2 V

17 34 ns

918nC

10

7

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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2

Document Number: 68983

S-82660-Rev. A, 03-Nov-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si4230DY

Vishay Siliconix

30

VGS=10thru 4 V

24

18

12

- Drain Current (A)I

D

6

0

0.0 0.5 1.0 1.5 2.0 2.5

- Drain-to-Source Voltage (V)

V

DS

VGS=3V

Output Characteristics

0.024

0.022

0.020

VGS=4.5V

5

4

3

2

- Drain Current (A)I

D

1

0

012345

TC= 25 °C

TC= 125 °C

- Gate-to-Source Voltage (V)

V

GS

TC= - 55 °C

Transfer Characteristics

1200

C

960

720

iss

0.018

- On-Resistance (Ω)R

DS(on)

0.016

0.014

VGS=10V

0 6 12 18 24 30

ID- Drain Current (A)

On-Resistance vs. Drain Current

10

ID= 8 A

8

VDS=10V

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 3.6 7.2 10.8 14.4 18.0

Qg- Total Gate Charge (nC)

VDS=20V

VDS=15V

Gate Charge

480

C - Capacitance (pF)

240

C

oss

C

rss

0

0 5 10 15 20 25 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID= 8 A

1.6

1.4

1.2

- On-ResistanceR
(Normalized)

1.0

DS(on)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

-Junction Temperature (°C)

J

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 68983
S-82660-Rev. A, 03-Nov-08

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3

Si4230DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 150 °C

TJ= 25 °C

VSD-Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.4

0.2

0.0

- 0.2

Variance (V)V

- 0.4

GS(th)

ID=5mA

0.10

ID= 8 A

0.08

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

0.00
012345678 910

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

60

48

36

Power (W)

24

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

ID= 250 µA

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1
TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

* V

GS

Safe Operating Area

*

DS(on)

BVDSS Limited

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

DS(on)

12

0

0.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1 s
10 s
DC

is specified

011100.00.01

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4

Document Number: 68983

S-82660-Rev. A, 03-Nov-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

11.0

8.8

6.6

4.4

- Drain Current (A)

D

I

2.2

0.0
0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Current Derating*

Si4230DY

Vishay Siliconix

4.0

3.2

2.4

Power (W)

1.6

0.8

0.0
0 25 50 75 100 125 150

T

- Case Temperature (°C)

C

Power, Junction-to-Foot

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

1.5

1.2

0.9

Power (W)

0.6

0.3

0.0
0 25 50 75 100 125 150

-Ambient Temperature (°C)

T

A

Power Derating, Junction-to-Ambient

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 68983
S-82660-Rev. A, 03-Nov-08

www.vishay.com

5

Si4230DY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01
10

1

0.1

0.1

0.05

0.02

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-3

10

-2

10

-1

1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

10

t

1

t

2

t

1

t

2

=110 °C/W

thJA

(t)

100

100010

0.01

-4

10

Single Pulse

-3

10

-2

10

-1

01110

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68983.

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Document Number: 68983

S-82660-Rev. A, 03-Nov-08

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

Package Information

Vishay Siliconix

D

e

BA

1

DIM

A 1.35 1.75 0.053 0.069

A

1

B 0.35 0.51 0.014 0.020

C 0.19 0.25 0.0075 0.010

D 4.80 5.00 0.189 0.196

E 3.80 4.00 0.150 0.157

e 1.27 BSC 0.050 BSC

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.50 0.93 0.020 0.037

q0°8°0°8°

S 0.44 0.64 0.018 0.026

ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

8

1

0.25 mm (Gage Plane)

A

6

7

2

5

HE

3

4

S

h x 45

C

L

MILLIMETERS INCHES

Min Max Min Max

0.10 0.20 0.004 0.008

All Leads

q

0.101 mm

0.004"

Document Number: 71192
11-Sep-06

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1

VISHAY SILICONIX

Trench FET® Power MOSFETs

Application Note 808

Mounting LITTLE FOOT®, SO-8 Power MOSFETs

Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use

integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and

0.050

1.27

design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the

0.027

0.69

0.07

1.98

Figure 2. Dual MOSFET SO-8 Pad Pattern

basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.

In the case of the SO-8 package, the thermal connections
are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The

The minimum recommended pad patterns for the
single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.

total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.

Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, “thermal” connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder

0.288

7.3

connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the

0.050

1.27

0.027

0.69

0.078

1.98

0.2

5.07

0.196

5.0

Figure 1. Single MOSFET SO-8 Pad

Pattern With Copper Spreading

Document Number: 70740 www.vishay.com
Revision: 18-Jun-07 1

drain pins, the solder mask generation occurs automatically.

A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least

0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.

0.288

7.3

8

0.2

5.07

With Copper Spreading

0.088

2.25

0.088

2.25

APPLICATION NOTE

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172

(4.369)

0.028

(0.711)

Return to Index

Return to Index

0.022

(0.559)

0.246
(6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.270)

0.152

0.047

(3.861)

(1.194)

APPLICATION NOTE

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22 Revision: 21-Jan-08

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Revision: 11-Mar-11 1