Datasheet si3851dv Datasheet

Si3851DV

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

VDS (V) R

- 30

0.200 at V

0.360 at V

DS(on)

GS

GS

(Ω)

= - 10 V

= - 4.5 V

SCHOTTKY PRODUCT SUMMARY

(V)

V

VKA (V)

Diode Forward Voltage

30 0.5 V at 0.5 A 0.5

3 mm

Ordering Information: Si3851DV-T1-E3 (Lead (Pb)-free)

Si3851DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

F

TSOP-6

Top View

1

2

3

2.85 mm

6

5

4

KA

N/CS

DG

I

(A)

D

± 1.8

± 1.2

(A)

I

F

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• LITTLE FOOT

• Compliant to RoHS Directive 2002/95/EC

®

Plus

S

G

D

P-Channel MOSFET

K

A

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage (MOSFET and Schottky)

Gate-Source Voltage (MOSFET)

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C) (MOSFET)

J

(MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

Average Forward Current (Schottky)

Pulsed Foward Current (Schottky)

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

a

a

Operating Junction and Storage Temperature Range

Notes:
a. Surface mounted on 1" x 1" FR4 board.

Document Number: 70978
S09-2275-Rev. B, 02-Nov-09

TA = 25 °C

a

T

= 70 °C ± 1.5 ± 1.2

A

a

TA = 25 °C

= 70 °C 0.73 0.53

T

A

TA = 25 °C 1.0 0.76

T

= 70 °C 0.64 0.48

A

V

DS

V

KA

V

GS

I

D

I

DM

I

S

I

F

I

FM

± 20 ± 20

± 1.8 ± 1.6

- 1.05 - 0.75

- 30

30

± 7

0.5

7

1.15 0.83

P

D

T

, T

J

stg

- 55 to 150 °C

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VReverse Voltage (Schottky)

A

W

1

Si3851DV

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Device Symbol Typical Maximum Unit

t ≤ 5 s

Junction-to-Ambient

Steady State

Junction-to-Foot Steady State

MOSFET

Schottky 103 125

MOSFET 130 150

R

thJA

Schottky 140 165

MOSFET

Schottky 80 95

R

thJF

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

V

SD

Total Gate Charge Qg

gs

Gate-Drain Charge Q

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off DelayTime t

Fall Ti me t

Body Diode Reverse Recovery Time t

0.8

gd

d(on)

r

12 18

d(off)

f

rr

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

V

V

DS

I

D

= VGS, ID = - 250 µA - 1 V

DS

VDS = 0 V, VGS = ± 20 V ± 100 nA

V

= - 24 V, VGS = 0 V - 1

DS

= - 24 V, V

DS

≥ - 5 V, V

DS

V

GS

V

= - 4.5 V, ID = - 1.2 A 0.298 0.360

GS

V

DS

= 0 V, TJ = 75 °C - 10

GS

= - 10 V - 5 A

GS

= - 10 V, ID = - 1.8 A 0.165 0.200

= - 15 V, ID = - 1.8 A 2.4 S

IS = - 1.05 V, VGS = 0 V - 0.83 - 1.10 V

= - 15 V, V

V

DD

≅ - 1 A, V

= - 5 V, ID = - 1.8 A

GS

= - 15 V, RL = 15 Ω

= - 10 V, Rg = 6 Ω

GEN

IF = - 1.05 A, dI/dt = 100 A/µs 30 60

93 110

75 90

2.4 3.6

0.9

812

12 18

711

°C/W

µA

Ω

nCGate-Source Charge Q

ns

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Forward Voltage Drop V

F

IF = 0.5 A 0.45 0.5

I

= 0.5 A, TJ = 125 °C 0.35 0.4

F

VR = 30 V 0.002 0.100

Maximum Reverse Leakage Current I

Junction Capacitance C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

rm

T

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2

= 30 V, TJ = 75 °C 0.06 1

R

V

= 30 V, TJ = 125 °C 1.5 10

R

VR = 10 V 24 pF

Document Number: 70978

S09-2275-Rev. B, 02-Nov-09

V

mAV

MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Si3851DV

Vishay Siliconix

VGS = 10 V thru 7 V

8

6

4

- Drain Current (A)I

D

2

0

012345

VDS - Drain-to-Source Voltage (V)

6 V

2 V

Output Characteristics

0.6

0.5

0.4

0.3

- On-Resistance (Ω)R

0.2

DS(on)

0.1

0

VGS = 4.5 V

VGS = 10 V

01234567

ID - Drain Current (A)

On-Resistance vs. Drain Current

5 V

4 V

3 V

8

TC = - 55 °C

6

25 °C

4

- Drain Current (A)I

D

2

0

0123456

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

300

240

180

120

C - Capacitance (pF)

60

0

061218 24 30

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

C

iss

Capacitance

125 °C

10

VDS = 15 V

= 1.8 A

I

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

012345

Document Number: 70978
S09-2275-Rev. B, 02-Nov-09

Qg - Total Gate Charge (nC)

Gate Charge

1.8

VGS = 10 V

= 1.8 A

I

D

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

- On-ResistanceR

(Normalized)

DS(on)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

On-Resistance vs. Junction Temperature

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Si3851DV

Vishay Siliconix

MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

10

TJ = 150 °C

1

- Source Current (A)I

S

0.1

0.0 0.3 0.6 0.9

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

0.6

0.4

Variance (V)

GS(th)

V

0.2

0.0

- 0.2

ID = 250 µA

TJ = 25 °C

1.2 1.5

0.6

ID = 1.8 A

0.5

ID = 1 A

0.4

0.3

- On-Resistance (Ω)R

0.2

DS(on)

0.1

0

02468 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

8

6

4

Power (W)

2

- 0.4

- 50 - 25 0 25 50 75 100 125 150

0.1

Thermal Impedance

Normalized Effective Transient

0.01

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4

2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

-4

10

TJ - Temperature (°C)

Threshold Voltage

Single Pulse

-3

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

0

0.01

1

10 300.1

Time (s)

Single Pulse Power, Junction-to-Ambient

Notes:

P

DM

t

1

t

2

t

thJA

thJA

(t)

100

1

t

2

= 130 °C/W

00601110

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-2

10

-1

Square Wave Pulse Duration (s)

Document Number: 70978

S09-2275-Rev. B, 02-Nov-09

MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

Normalized Thermal Transient Impedance, Junction-to-Foot

Thermal Impedance

Normalized Effective Transient

Si3851DV

Vishay Siliconix

01110

SCHOTTKY TYPICAL CHARACTERISTICS T

20

10

1

0.1

30 V

0.01

- Reverse Current (mA)

R

I

0.001

0.0001
0255075100

TJ - Junction Temperature (°C)

Reverse Current vs. Junction Temperature

10 V

125

100

75

125 150

VGS = 10 V

= 1.8 A

I

D

= 25 °C, unless otherwise noted

A

5

- Forward Current (A)

F

I

1

0.1

TJ = 150 °C

0 0.2 0.4 0.6

VF - Forward Voltage Drop (V)

Forward Voltage Drop

TJ = 25 °C

0.8 1.0

Document Number: 70978
S09-2275-Rev. B, 02-Nov-09

50

- Junction Capacitance (pF)

T

C

25

0

0 6 12 18 24 30

VKA - Reverse Voltage (V)

Capacitance

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5

Si3851DV

Vishay Siliconix

SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.2

0.1

0.05

0.02

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-3

10

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

t

1

t

2

t

1

t

2

= 140 °C/W

thJA

(t)

thJA

100

00601110

0.01

-4

10

-3

10

-2

10

-1

01110

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Single Pulse

reliability data, see www.vishay.com/ppg?70978

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6

.

Document Number: 70978

S09-2275-Rev. B, 02-Nov-09

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Revision: 11-Mar-11 1