Datasheet si3850dv Datasheet

Si3850DV

N-Ch

l

20

V

Maximum Power Dissipation

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

PRODUCT SUMMARY

V

(V) r

DS

-

anne

P-Channel −20

G

1

D

G

2

Ordering Information: Si3850DV-T1

TSOP-6

Top V iew

1

2

3

(W) I

DS(on)

0.500 @ VGS = 4.5 V 1.2

0.750 @ VGS = 3.0 V 1.0

1.00 @ VGS = −4.5 V −0.85

1.30 @ VGS = −3.0 V −0.75

6

5

4

Si3850DV-T1—E3 (Lead (Pb)-Free)

S

1

D

S

2

FEATURES

(A)

D

D 100% Rg Tested

S

G

2

G

1

S

2

D

1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source Current (Diode Conduction) I

Maximum Power Dissipation
(Surface Mounted on FR4 Board)

Operating Junction and Storage Temperature Range TJ, T

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec) R

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Document Number: 70778
S-50132—Rev. D, 24-Jan-05

Parameter Symbol N-Channel P-Channel Unit

DS

GS

_

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

I

D

DM

S

P

D

stg

20 −20

"12

1.2 −0.85

0.95 −0.65

3.5 −2.5

1 −1

1.25

0.8

−55 to 150 _C

Parameter Symbol N- or P- Channel Unit

thJA

100 _C/W

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A

W

1

Si3850DV

G

Th

ld Vol

V

V

T

l G

Ch

Q

C

V

10 V, VGS = −4.5 V

D

VDD = 10 V, RL = 10 W

g

P Channel

5 V,

I

1 A, V

5 V, Rg = 6 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

ate

resho

tage

Gate-Body Leakage I

GS(th)

GSS

VDS = VGS, I

VDS = VGS, I

VDS = 0 V, V

VDS = 20 V, VGS = 0 V

Zero Gate Voltage Drain Current I

DSS

VDS = −20 V, VGS = 0 V P-Ch −1

VDS = 20 V, VGS = 0 V, TJ = 70_C

VDS = −20 V, VGS = 0 V, TJ = 70_C P-Ch −10

V

On-State Drain Current

a

I

D(on)

DS

VDS = −5 V, VGS = −4.5 V P-Ch −2.0

VGS = 4.5 V, ID = 0.5 A

Drain-Source On-State Resistance

a

r

DS(on)

VGS = −4.5 V, ID = −0.5 A P-Ch 0.70 1.00

VGS = 3.0 V, ID = 0.5 A

VGS = −3.0 V, ID = −0.5 A P-Ch 1.10 1.30

Forward Transconductance

Diode Forward Voltage

ate

b

arge

Dynamic

ota

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v

a

a

300 ms, duty cycle v 2%.

g

V

SD

d(on)

d(off)

rr

fs

g

gs

gd

g

r

f

VDS = 10 V, ID = 1.2 A

VDS = −10 V, ID = −0.85 A P-Ch 1.2

IS = 1 A, VGS = 0 V

IS = −1 A, VGS = 0 V P-Ch −1.2

V

= 10 V, VGS = 4.5 V, ID = 1.2 A

DS

−

= −

DS

V

= 10 V, RL = 10 W

DD

ID ^ 1 A, V

VDD = −10 V, RL = 10 W

I

^ −1 A, V

^ −

D

IF = 1 A, di/dt = 100 A/ms

IF = −1 A, di/dt = 100 A/ms P-Ch 40 80

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

= 250 mA

D

= −250 mA P-Ch −0.6 −1.5

D

= "12 V "100 nA

GS

N-Ch

0.6 1.5

N-Ch

N-Ch

= 5 V, VGS = 4.5 V

N-Ch

3.0

N-Ch

N-Ch

N-Ch

N-Ch

N-Ch

N-Channel

P-Ch 1.10 2.5

N-Ch

P-Channel

ID = −0.85 A

−

P-Ch 0.50

N-Ch

P-Ch 0.2

N-Ch

0.3 1.5

P-Ch 3 16

N-Ch

P-Ch 8 15

N-Channel

= 4.5 V, Rg = 6 W

GEN

P-Channel

= −4.

= −4.

GEN

R

= 6 W

N-Ch

P-Ch 20 40

N-Ch

P-Ch 10 20

N-Ch

P-Ch 8 15

N-Ch

1

10

0.38 0.500

0.55 0.750

2.7

1.2

0.8 2.0

0.25

0.2

10 20

20 40

20 40

16 30

40 80

mA

A

W

S

V

n

W

ns

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Document Number: 70778

S-50132—Rev. D, 24-Jan-05

Si3850DV

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL

3.5
VGS = 5.0 thru 4.0 V

3.0

2.5

2.0

1.5

− Drain Current (A)I
D

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V)

1.5 V

On-Resistance vs. Drain Current

0.7

VGS = 3.0 V

0.6

W )

Output Characteristics Transfer Characteristics

VGS = 4.5 V

− On-Resistance (r

DS(on)

0.5

0.4

0.3

0.2

0.1

3.5 V

3.0 V

2.5 V

2.0 V

3.5
TC = −55_C

3.0

2.5

2.0

1.5

− Drain Current (A)I
D

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VGS − Gate-to-Source Voltage (V)

120

100

80

60

40

C − Capacitance (pF)

20

C

oss

C

rss

25_C

Capacitance

C

iss

125_C

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

5

VGS = 10 V
I

= 1.2 A

D

4

3

2

− Gate-to-Source Voltage (V)

GS

1

V

0

0.0 0.2 0.4 0.6 0.8

Document Number: 70778
S-50132—Rev. D, 24-Jan-05

I

− Drain Current (A)

D

Gate Charge

Q

− Total Gate Charge (nC)

g

0

048121620

V

− Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

2.0

VGS = 4.5 V
I

= 1.2 A

1.6

1.2

− On-Resiistance

0.8

(Normalized)

DS(on)

r

0.4

0.0

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

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Si3850DV

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL

4.0

TJ = 150_C

1.0

− Source Current (A)I
S

TJ = 25_C

0.1

0.0 0.3 0.6 0.9 1.2 1.5

− Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

V

SD

Threshold Voltage Single Pulse Power

0.2

0.1

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

ID = 250 mA

Variance (V)V

GS(th)

−0.0

−0.1

−0.2

0.8

W )

0.6

0.4

− On-Resistance (r

0.2

DS(on)

ID = 1.2 A

0.0
012345

30

24

18

Power (W)

12

−0.3

−0.4

−50 −25 0 25 50 75 100 125 150

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

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4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

6

0

0.001 0.010 0.100 1.000 10.000

T

− Temperature (_C) Time (sec)

J

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

Single Pulse

−3

10

−2

10

−1

10

Square Wave Pulse Duration (sec)

3. TJM − TA = PDMZ

4. Surface Mounted

11030

t

1

t

2

t

1

t

2

= 100_C/W

thJA

(t)

thJA

Document Number: 70778

S-50132—Rev. D, 24-Jan-05

Si3850DV

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL

2.5

VGS = 5.0 thru 4.0 V

2.0

1.5

1.0

− Drain Current (A)I
D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

2.0

VGS = 3.0 V

W )

1.6

1.2

− On-Resistance (r

0.8

DS(on)

0.4

Output Characteristics Transfer Characteristics

3.5 V

3.0 V

2.5 V

2.0 V

VGS = 4.5 V

2.5

TC = −55_C

2.0

1.5

1.0

− Drain Current (A)I
D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

120

100

80

60

40

C − Capacitance (pF)

20

C

rss

Capacitance

C

oss

25_C

C

125_C

iss

0.0

0.0 0.5 1.0 1.5 2.0 2.5

8

VGS = 10 V
I

= 0.85 A

D

6

4

− Gate-to-Source Voltage (V)
2

GS

V

0

0.0 0.3 0.6 0.9 1.2 1.5 1.8

Document Number: 70778
S-50132—Rev. D, 24-Jan-05

I

− Drain Current (A)

D

Gate Charge

Q

− Total Gate Charge (nC)

g

0

048121620

V

− Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

2.0

VGS = 4.5 V
I

= 0.85 A

1.6

1.2

0.8

− On-Resiistance
(Normalized)

DS(on)

r

0.4

0.0

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

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Si3850DV

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL

4.0

TJ = 150_C

1.0

− Source Current (A)I
S

TJ = 25_C

0.1

0.0 0.3 0.6 0.9 1.2 1.5

− Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

V

SD

Threshold Voltage Single Pulse Power

0.4

0.3

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Variance (V)V

GS(th)

0.2

0.1

0.0

ID = 250 mA

2.0

W )

1.5

1.0

− On-Resistance (r

0.5

DS(on)

ID =0.85 A

0.0
012345

30

24

18

Power (W)

12

−0.1

−0.2

−50 −25 0 25 50 75 100 125 150

T

− Temperature (_C) Time (sec)

J

2

Normalized Thermal Transient Impedance, Junction-to-Ambient

6

0

0.001 0.010 0.100 1.000 10.000

1

Duty Cycle = 0.5

0.1

Thermal Impedance

Normalized Effective Transient

0.2

0.1

0.05

0.02

Single Pulse

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

2

thJA

t

1

t

2

thJA

(t)

= 100_C/W

0.01

−4

10

−3

10

−2

10

−1

10

11030

Square Wave Pulse Duration (sec)

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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

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Document Number: 70778

S-50132—Rev. D, 24-Jan-05

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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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Revision: 18-Jul-08 1