Page 1
Si3456DV
N-Channel PowerTrenchÒ MOSFET
Si3456DV
June 2002
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
· 5.1 A, 30 V. R
R
· High performance trench technology for extremely
low R
DS(ON)
· Low gate charge
· High power and current handling capability
= 45 mW @ VGS = 10 V
DS(ON)
= 65 mW @ VGS = 4.5 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 5.1 A
– Pulsed 20
Maximum Power Dissipation (Note 1a) 1.6 WP
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
±20
0.8
V
°C
Thermal Characteristics
R
qJA
R
qJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.456 Si3456DV 7’’ 8mm 3000 units
Ó2002 Fairchild Semiconductor Corpor ation
°C/W
Si3456DV Rev B
Page 2
Si3456DV
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
DBVDSS
DT
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 mA
V
GS
I
= 250 mA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V 1
TJ=70°C
Gate–Body Leakage
= ±20 V, VDS = 0 V ±100
V
GS
30 V
25
mV/°C
5
mA
nA
On Characteristics (Note 2)
V
GS(th)
DVGS(th)
DT
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS,ID = 250 mA
V
DS
I
= 250 mA, Referenced to 25°C
D
= 10 V, ID = 5.1 A
V
GS
= 4.5 V, ID = 4.3 A
V
GS
= 10 V, ID = 5.1 A, TJ=125°C
V
GS
On–State Drain Current VGS = 10 V, VDS = 5 V 15 A
Forward Transconductance VDS = 10 V, ID = 5.1 A 12 S
11.5 2 V
–4
33
44
49
45
65
71
mV/°
mW
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 463 pF
Output Capacitance 109 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.1
= 15 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
44 pF
W
Switching Characteristics (Note 2)
= 15 V, ID = 1 A,
V
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 6.3 13 nS
Turn–On Rise Time 6 12 nS
Turn–Off Delay Time 20 36 nS
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 9 12.6 nC
Gate–Source Charge 1.4 nC
Gate–Drain Charge
DS
= 10 V, R
V
GS
V
= 15 V, ID = 5.1 A,
DS
= 10 V
V
GS
GEN
= 6 W
2.3 4.6 nS
1.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 18 nS
Diode Reverse Recovery Charge
V
= 0 V, IS = 1.3 A (Note 2) 0.77 1.2 V
GS
= 5.1A
I
F
= 100 A/µs (Note 2)
d
iF/dt
17 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
qJA
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
is guaranteed by design while R
pins. R
qJC
is determined by the user's board design.
qCA
2
pad of 2oz copper on FR-4 board.
Si3456DV Rev B
Page 3
Typical Characteristics
)
E
Si3456DV
20
VGS = 10V
6.0V
15
10
, DRAIN CURRENT (A
5
D
I
0
00.511.522.533.5
4.5V
3.5V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
3.0V
2.5V
2.4
2.2
VGS = 3.0V
2
, NORMALIZED
R
DS(ON)
1.8
1.6
1.4
1.2
1
DRAIN-SOURCE ON-RESIST ANCE
0.8
3.5V
4.0V
4.5V
0 5 10 15 20
, DRAIN CURRENT (A)
I
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 5.1A
V
=10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANC
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.14
0.12
0.1
0.08
0.06
, ON-RESISTANCE (OHM)
TA = 25oC
DS(ON)
0.04
R
0.02
246810
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
6.0V
10V
ID = 2.5A
Figure 3. On-Resistance Variation
withTemperature.
20
VDS = 5V
15
10
, DRAIN CURRENT (A)
D
5
I
0
11.522.5 33.544.5
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = -55oC 25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3456DV Rev B
Page 4
Typical Characteristics
)
T
)
Si3456DV
10
ID = 5.1A
8
VDS = 10V
15V
20V
6
4
2
, GATE-SOURCE VOLTAGE ( V)
GS
V
0
0246810
, GATE CHARGE (nC)
Q
g
700
600
500
C
ISS
400
300
200
CAPACITANCE (pF)
100
0
0 5 10 15 20 25 30
C
OSS
C
RSS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100us
1ms
10ms
100ms
1
VGS = 10V
SINGLE PULSE
, DRAIN CURRENT (A
0.1
D
I
0.01
= 156oC/W
R
q
JA
T
= 25oC
A
0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
1s
10s
DC
50
SINGLE PULSE
40
R
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.0001 0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
= 156°C/W
q
JA
= 25°C
T
A
f = 1MHz
= 0 V
V
GS
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIEN
0.01
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) * R
JA
q
R
=156 °C/W
qJA
P(pk
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
JA
q
(t)
qJA
/ t
1
2
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3456DV Rev B
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H7
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