Datasheet Si2319DS Datasheet (Vishay)

PRODUCT SUMMARY

V

b

b

VDS (V) r

−40

0.082 @ V

0.130 @ V

P-Channel 40-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

(W) ID (A)

DS(on)

= −10 V −3.0

GS

= −4.5 V −2.4

GS

G

1

S

2

b

TO-236

(SOT-23)

APPLICATIONS

D Load Switch

D

3

Ordering Information: Si2319DS-T1

Si2319DS

Vishay Siliconix

Si2319DS-T1—E3 (Lead Free)

Top View

Si2319DS (C9)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

a

_

b

TA= 25_C

TA= 70_C

TA= 25_C

TA= 70_C

DS

GS

I

D

I

DM

I

S

P

D

stg

−3.0 −2.3

−2.4 −1.85

−1.0 −0.62

1.25 0.75

0.8 0.48

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

−40

"20

−12

A

W

Maximum Junction-to-Ambient

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) R

Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.

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Document Number: 72315
S-40844—Rev. B, 03-May-04

b

R

c

thJA

thJF

75 100

120 166

40 50

_C/W

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Si2319DS

ID ^ −3 A

ID ^ −1.0 A, V

=

V

T

Off Ti

g

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Conditions Min Typ Max Unit

Static

Limits

Drain-Source Breakdown Voltage V

(BR)DSS

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

I

r

DS(on)

Diode Forward Voltage V

Dynamic

b

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Switching

c

t

Turn-On Time

urn-

-

me

t

GS(th)

GSS

DSS

D(on)

g

fs

SD

g

gs

gd

iss

oss

rss

d(on)

t

r

d(off)

t

f

VGS = 0 V, ID = −250 mA −40

VDS = VGS, ID = −250 mA −1.0 −3.0

VDS = 0 V, VGS = "20 V "100 nA

VDS = −40 V, VGS = 0 V −1

VDS = −40 V, VGS = 0 V, TJ = 55_C −10

VDS v −5 V, VGS = −10 V −6 A

VGS = −10 V, ID = −3.0 A 0.065 0.082

VGS = −4.5 V, ID = −2.4 A 0.100 0.130

VDS = −5 V, ID = −3.0 A 7.0 S

IS = −1.25 A, VGS = 0 V −0.8 −1.2 V

11.3 17

VDS = −20 V, VGS = −10 V

I

^ −3 A

D

1.7

3.3

470

VDS = −20 V, VGS = 0, f = 1 MHz

85

65

7 15

VDD = −20 V, RL =20 W

−

Rg = 6 W

GEN

−

−4.5

15 25

25 40

25 40

V

mA

W

nC

pF

ns

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600

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Document Number: 72315

S-40844—Rev. B, 03-May-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si2319DS

Vishay Siliconix

20

16

12

8

− Drain Current (A)I
D

4

0

0246810

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

1 V, 2 V

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.20

0.16

W )

0.12

0.08

− On-Resistance (r

DS(on)

0.04

0.00

VGS = 4.5 V

VGS = 10 V

024681012

ID − Drain Current (A)

4 V

3 V

12

10

8

6

4

− Drain Current (A)I
D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

800

700

600

500

400

300

C − Capacitance (pF)

200

100

C

0

0 5 10 15 20 25 30 35 40

TC = 125_C

25_C

VGS − Gate-to-Source Voltage (V)

Capacitance

C

iss

C

oss

rss

V

− Drain-to-Source Voltage (V)

DS

−55_C

10

VDS = 20 V
I

= 3 A

D

8

6

4

− Gate-to-Source Voltage (V)
2

GS

V

0

024681012

Document Number: 72315
S-40844—Rev. B, 03-May-04

Gate Charge

Qg − Total Gate Charge (nC)

1.8

1.6

1.4

1.2

− On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

0.6

−50 −25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

VGS = 10 V
I

= 3 A

D

− Junction Temperature (_C)

T

J

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Si2319DS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

20

10

− Source Current (A)I

S

0.1

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

TJ = 150_C

1

TJ = 25_C

0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

0.8

0.7

0.6

W )

0.5

0.4

0.3

− On-Resistance (r

0.2

DS(on)

0.1

0.0
0246810

ID = 3 A

Threshold Voltage Single Pulse Power

0.6

0.4

0.2
ID = 250 mA

10

8

6

Variance (V)V

0.0

GS(th)

−0.2

−0.4

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C) Time (sec)

100.0

10.0

1.0

− Drain Current (A)I

D

0.1

0.01

4

Power (W)

2

0

0.01 0.1 1 10 100 1000

Safe Operating Area, Junction-to-Case

Limited by

r

DS(on)

10 ms

100 ms

1 ms

10 ms

100 ms

TA = 25_C

Single Pulse

0.1 1 10 100

VDS − Drain-to-Source Voltage (V)

Square Wave Pulse Duration (sec)

dc, 100 s, 10 s, 1 s

TA = 25_C

Single Pulse

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Document Number: 72315

S-40844—Rev. B, 03-May-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si2319DS

Vishay Siliconix

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

−3

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

−2

10

−1

10

1 10 600

Square Wave Pulse Duration (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

2

thJA

thJA

t

1

t

2

(t)

= 166_C/W

100

Document Number: 72315
S-40844—Rev. B, 03-May-04

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Revision: 08-Apr-05 1