Datasheet si2316bd Datasheet

N-Channel 30-V (D-S) MOSFET

Si2316BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.050 at V

30

0.080 at V

(Ω)

DS(on)

= 10 V 4.5

GS

= 4.5 V 3.4

GS

FEATURES

a

(A)

I

D

Qg (Typ)

3.16 nC

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• PWM Optimized

• 100 % R

tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Battery Switch

• DC/DC Converter

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2316DS (M6)*

*Marking Code

Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)

Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

C

T

= 70 °C 3.6

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

= 25 °C

T

A

= 25 °C

T

C

T

= 70 °C 1.06

C

= 25 °C

T

A

P

TA = 70 °C

Operating Junction and Storage Temperature Range TJ, T

DS

GS

I

D

DM

I

S

D

stg

30

± 20

4.5

b, c

3.9

b, c

3.13
20

1.39

b, c

1.04

1.66

b, c

1.25

b, c

0.8

- 55 to 150

Unit

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R

Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 moard.

= 25 °C.

C

c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.

b, d

≤ 5 s R

thJA

thJF

80 100
60 75

°C/W

Document Number: 70445
S09-1503-Rev. B, 10-Aug-09

www.vishay.com

1

Si2316BDS

Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage V

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off Delay Time t

Fall Ti me t

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off Delay Time t

Fall Ti me t

DS

Δ

J

V

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

65

oss

37

rss

g

gs

1.1

gd

f = 1 MHz 2.6 3.9 Ω

g

d(on)

r

12 18

d(off)

f

d(on)

r

11 17

d(off)

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

S

I

SM

SD

rr

rr

a

b

V

DS

V

V

DS

V

DS

I

≅ 3.13 A, V

D

I

= 2.4 A, V

D

IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA 30 V

DS

ID = 250 µA

V

= VGS, ID = 250 µA 1 3 V

DS

23.92

5.2

VDS = 0 V, VGS = ± 20 V ± 100 nA

V

= 30 V, V

DS

= 30 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 3.9 A 0.041 0.050

GS

= 4.5 V, ID = 3.3 A 0.064 0.080

V

GS

= 0 V 1

GS

= 0 V, TJ = 55 °C 10

= 10 V 20 A

GS

VDS = 15V, ID = 3.9 A 6 S

350

= 15 V, V

DS

= 15 V, V

= 0 V, f = 1 MHz

GS

= 10 V, ID = 3.9 A 6.35 9.6

GS

3.16 4.8

= 15 V, V

= 4.5 V, ID = 3.9 A

GS

1.56

4.5 6.75

V

= 15 V, RL = 4.8 Ω

DD

= 10 V, RG = 1 Ω

GEN

11 16.5

710.5

20 30

V

= 15 V, RL = 6.25 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

65 98

23 35

TC = 25 °C 1.39

20

IS = 2.0 A 0.8 1.2 V

10 15 ns

46nC

6.6

3.5

mV/°C

µA

Ω

pF

nC

ns

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com
2

Document Number: 70445

S09-1503-Rev. B, 10-Aug-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2316BDS

Vishay Siliconix

20

VGS = 10 V thru 5 V

15

10

- Drain Current (A)I

D

5

0

012345

- Drain-to-Source Voltage (V)

V

DS

VGS = 4 V

VGS = 3 V

Output Characteristics

0.20

0.16

VGS = 4.5 V

0.12

3

2

- Drain Current (A)I

D

1

0

012345

TJ = 25 °C

TJ = 125 °C

TJ = - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

500

400

300

C

iss

0.08

- On-Resistance (Ω)

DS(on)

R

0.04

0.00
048 12 16 20

I

D

VGS = 10 V

- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 3.9 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

02468

VDS = 16 V

VDS = 24 V

Qg - Total Gate Charge (nC)

Gate Charge

200

C - Capacitance (pF)

100

C

rss

0

061218 24 30

1.8

1.6

1.4

1.2

- On-Resistance
(Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 10 V, ID = 3.9 A

VGS = 4.5 V, ID = 3.3 A

TJ- Junction Temperature (°C)

Document Number: 70445
S09-1503-Rev. B, 10-Aug-09

www.vishay.com

3

Si2316BDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

1

- Source Current (A)I

S

0.1

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

- Source-to-Drain Voltage (V)

V

SD

TJ = 25 °C

Source-Drain Diode Forward Voltage

2.6

2.4

2.2

(V)

2.0

GS(th)

V

1.8

ID = 250 µA

- On-Resistance (Ω)

DS(on)

R

Power (W)

0.12

ID = 4.1 A

0.09

TA = 125 °C

0.06

0.03

0.00
02468 10

- Gate-to-Source Voltage (V)

V

GS

TA = 25 °C

On-Resistance vs. Gate-to-Source Voltage

10

8

6

4

TA = 25 °C

Single Pulse

1.6

1.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature ( C)

Threshold Voltage

100

R

DS(on)

10

1

0.1

- Drain Current (A)

D

I

0.01

0.001

0.1 1 10 100

*V

GS

Limited*

TA = 25 °C

Single Pulse

- Drain-to-Source Voltage (V)

V

DS

minimum VGS at which R

Safe Operating Area

DS(on)

2

0

0.10.01

Single Pulse Power

10 ms

100 ms

1 s

10 s

DC

is specified

1 60010

Time (s)

100

www.vishay.com
4

Document Number: 70445

S09-1503-Rev. B, 10-Aug-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2316BDS

Vishay Siliconix

Power

2.0

1.6

1.2

0.8

0.4

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

5

4

3

2

- Drain Current (A)

D

I

1

0

0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

*The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max.)

limit.

2

1

Duty Cycle = 0.5

0.2

Notes:

P

DM

t

1

t

TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

t
t

thJA

100

1

2

(t)

= 130 °C/W

0.1

Thermal Impedance

Normalized Effective Transient

0.01

0.1

0.05

0.02

Single Pulse

-

4

10

-

3

10

-

2

10

-

1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70445

.

Document Number: 70445
S09-1503-Rev. B, 10-Aug-09

www.vishay.com

5

SOT-23 (TO-236): 3-LEAD

b

3

1

Package Information

Vishay Siliconix

E

E

1

2

S

A

A

2

A

1

Dim

A 0.89 1.12 0.035 0.044

A

1

A

2

b 0.35 0.50 0.014 0.020

c 0.085 0.18 0.003 0.007

D 2.80 3.04 0.110 0.120

E 2.10 2.64 0.083 0.104

E

1

e 0.95 BSC 0.0374 Ref

e

1

L 0.40 0.60 0.016 0.024

L

1

S 0.50 Ref 0.020 Ref

q 3°8°3°8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

e

e

1

D

0.10 mm

Seating Plane

C

0.004"

C

C

q

L

L

1

MILLIMETERS INCHES

Min Max Min Max

0.01 0.10 0.0004 0.004

0.88 1.02 0.0346 0.040

1.20 1.40 0.047 0.055

1.90 BSC 0.0748 Ref

0.64 Ref 0.025 Ref

0.25 mm

Gauge Plane

Seating Plane

Document Number: 71196
09-Jul-01

www.vishay.com

1

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

AN807

Vishay Siliconix

Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis

of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.

ambient air. This pattern uses all the available area underneath the
body for this purpose.

0.114

2.9

0.081

2.05

0.150

3.8

0.059

1.5

0.0394

FIGURE 1. Footprint With Copper Spreading

1.0

0.037

0.95

Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the

Document Number: 70739
26-Nov-03

A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.

www.vishay.com

1

RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826

Vishay Siliconix

0.106
(2.692)

0.037

(0.950)

0.053

(1.341)

0.097

(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.022

(0.559)

0.049

0.029

(1.245)

(0.724)

Return to Index

Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25

Return to Index

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1