Datasheet si2314eds Datasheet

N-Channel 20-V (D-S) MOSFET

V

C/W

Si2314EDS

Vishay Siliconix

PRODUCT SUMMARY

FEATURES

D TrenchFETr Power MOSFET

VDS (V)

20

r

(W)

DS(on)

0.033 @ V

0.040 @ V

0.051 @ V

= 4.5 V 4.9

GS

= 2.5 V 4.4

GS

= 1.8 V 3.9

GS

TO-236

(SOT-23)

1

G

2

S

Top View

Si2314EDS (C4)*

*Marking Code

Ordering Information: Si2314EDS-T1

Si2314EDS-T1—E3 (Lead (Pb)-Free)

3

ID (A)

D ESD Protected: 3000 V
D RoHS Compliant

APPLICATIONS

D LI-lon Battery Protection

D

D

G

3 kW

N-Channel

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Pb-free

Available

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy

Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

b

b

a

_

a

TA= 25_C

TA= 70_C

L = 0.1 mH

TA= 25_C

TA= 70_C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

a

t v 5 sec

Steady State

DS

GS

I

D

I

DM

I

AS

E

AS

I

S

P

D

stg

R

thJA

thJF

4.9 3.77

3.9 3.0

1.25 0.75

0.80 0.48

75 100

120 166

40 50

20

"12

15

15

11.25 mJ

1.0 A

−55 to 150

A

W

_C

_C/W

Document Number: 71611
S-50574—Rev. C, 04-Apr-05

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1

Si2314EDS

mA

SO

DS(on)

W

DS GS D

V

DD

= 10 V, RL = 10 W

g

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(

BR)DSS

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

I

r

DS(on)

Diode Forward Voltage V

Dynamic

b

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Switching

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall-Time t

Source-Drain Reverse Recovery Time t

GS(th)

GSS

DSS

D(on)

g

fs

SD

g

gs

gd

d(on)

r

d(off)

f

rr

VGS = 0 V, ID = 250 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "4.5 V "1.5

VDS = 20 V, VGS = 0 V 1

VDS = 20 V, VGS = 0 V, TJ = 70_C

VDS w 10 V, VGS = 4.5 V 15 A

VGS = 4.5 V, ID = 5.0 A 0.027 0.033

VGS = 2.5 V, ID = 4.5 A 0.033 0.040

VGS = 1.8 V, ID = 4.0 A 0.042 0.051

VDS = 15 V, ID = 5.0 A 40 S

IS = 1.0 A, VGS = 0 V 0.8 1.2 V

VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 1.5 nC

V

= 10 V, RL = 10 W

DD

ID ^ 1.0 A, V

= 4.5 V, Rg = 6 W

GEN

IF = 1.0 A, di/dt = 100 A/ms

20

0.45

Limits

0.95

75

11.0 14.0

2.1

0.53 0.8

1.4 2.2

13.5 20

5.9 9

13 25 ns

V

mA

W

ms

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Gate Current vs. Gate-Source Voltage

10

1

TJ = 150_C

TJ = 25_C

0.1 1 10 100

V

− Gate-to-Source Voltage (V)

GS

− Gate Current (mA)I

GSS

1200

Gate-Current vs. Gate-Source Voltage

1000

800

600

400

200

0

024681012

VGS − Gate-to-Source Voltage (V)

mA)

− Gate Current (I

GSS

10,000

1,000

100

0.1

0.01

0.001

0.0001

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Document Number: 71611

S-50574—Rev. C, 04-Apr-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

15

VGS = 4.5 thru 2.0 V

12

Si2314EDS

Vishay Siliconix

15

12

− Drain Current (A)I

D

W )

− On-Resistance (r

DS(on)

9

6

3

0.5 V

0

01234

VDS − Drain-to-Source Voltage (V)

1.5 V

1.0 V

On-Resistance vs. Drain Current

0.15

0.12

0.09

0.06

0.03

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

9

− Drain Current (A)I

6

D

3

0

0.0 0.5 1.0 1.5 2.0

1500

1200

900

600

C − Capacitance (pF)

300

TC = 125_C

25_C

VGS − Gate-to-Source Voltage (V)

−55_C

Capacitance

C

iss

C

oss

C

rss

0.00
03691215

8

VDS = 10 V

= 5.0 A

I

D

6

4

− Gate-to-Source Voltage (V)
2

GS

V

0

0 4 8 12 16 20

Document Number: 71611
S-50574—Rev. C, 04-Apr-05

− Drain Current (A)

I

D

Gate Charge

Qg − Total Gate Charge (nC)

0

1.6

1.4

1.2

− On-Resiistance

DS(on)

r

1.0

(Normalized)

0.8

0.6

−50 −25 0 25 50 75 100 125 150

0 4 8 12 16 20

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

VGS = 4.5 V

= 5.0 A

I

D

T

− Junction Temperature (_C)

J

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Si2314EDS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

− Source Current (A)I

S

Variance (V)V

GS(th)

20

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

10

TJ = 150_C

1

TJ = 25_C

0.1

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

0.2

0.1

−0.0

−0.1

−0.2

Threshold Voltage

ID = 250 mA

0.20

W )

0.15

0.10

− On-Resistance (r

0.05

DS(on)

0.00

12

10

Power (W)

ID = 5.0 A

02468

Single Pulse Power

8

TA = 25_C

6

4

−0.3

−0.4

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C)

2

1

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

0

0.01

1

Time (sec)

10

100 6000.1

0.2

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

2

thJA

thJA

100

t

1

t

2

(t)

= 166_C/W

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

−4

0.1

0.05

0.02

Single Pulse

−3

10

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay .com/ppg?7161 1.

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Document Number: 71611

S-50574—Rev. C, 04-Apr-05

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Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1