Datasheet si2312ds Datasheet

N-Channel 20 -V (D-S) MOSFET

V

C/W

Si2312DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

20

r

DS(on)

0.033 @ V

0.040 @ V

0.051 @ V

(W)

= 4.5 V 4.9

GS

= 2.5 V 4.4

GS

= 1.8 V 3.9

GS

Ordering Information: Si2312DS-T1

ID (A) Qg (Typ)

1

G

2

S

11.2

TO-236

(SOT-23)

3

D

Top View

Si2312DS (C2)*

*Marking Code

Si2312DS-T1—E3 (Lead (Pb)-Free)

D 1.8-V Rated
D RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

FEATURES

Pb-free

Available

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy

Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

b

b

a

_

a

TA= 25_C

TA= 70_C

L = 0.1 mH

TA= 25_C

TA= 70_C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

a

t v 5 sec

Steady State

DS

GS

I

D

I

DM

I

AS

E

AS

I

S

P

D

stg

R

thJA

thJF

4.9 3.77

3.9 3.0

1.25 0.75

0.80 0.48

75 100

120 166

40 50

20

"8

15

15

11.25 mJ

1.0 A

−55 to 150

A

W

_C

_C/W

Document Number: 71338
S-50574—Rev. E, 04-Apr-05

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Si2312DS

V

SO

DS(on)

W

DS GS D

V

DD

= 10 V, RL = 10 W

g

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(

BR)DSS

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

a

a

I

r

DS(on)

Diode Forward Voltage V

Dynamic

b

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Switching

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall-Time t

Source-Drain Reverse Recovery Time t

GS(th)

GSS

DSS

D(on)

g

fs

SD

g

gs

gd

d(on)

r

d(off)

f

rr

VGS = 0 V, ID = 250 mA

VDS = VGS, ID = 250 mA

VDS = 0 V, VGS = "8 V "100 nA

VDS = 20 V, VGS = 0 V 1

VDS = 20 V, VGS = 0 V, TJ = 70_C

VDS w 10 V, VGS = 4.5 V 15 A

VGS = 4.5 V, ID = 5.0 A 0.027 0.033

VGS = 2.5 V, ID = 4.5 A 0.033 0.040

VGS = 1.8 V, ID = 4.0 A 0.042 0.051

VDS = 15 V, ID = 5.0 A 40 S

IS = 1.0 A, VGS = 0 V 0.8 1.2 V

VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 1.4 nC

V

= 10 V, RL = 10 W

DD

ID ^ 1.0 A, V

= 4.5 V, Rg = 6 W

GEN

IF = 1.0 A, di/dt = 100 A/ms

Limits

20

0.45 0.65 0.85

75

11.2 14.0

2.2

15 25

40 60

48 70

31 45

13 25

mA

W

ns

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

15

VGS = 4.5 thru 2.0 V

12

9

1.5 V

6

− Drain Current (A)I

D

3

0.5 V

1.0 V

0

01234

VDS − Drain-to-Source Voltage (V)

15

12

9

6

− Drain Current (A)I

D

TC = 125_C

3

25_C

−55_C

0

0.0 0.5 1.0 1.5 2.0

VGS − Gate-to-Source Voltage (V)

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Document Number: 71338

S-50574—Rev. E, 04-Apr-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si2312DS

Vishay Siliconix

0.15

0.12

W )

0.09

0.06

− On-Resistance (r

DS(on)

0.03

0.00

− Gate-to-Source Voltage (V)

GS

V

On-Resistance vs. Drain Current

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

03691215

− Drain Current (A)

I

D

Gate Charge

8

VDS = 10 V

= 5.0 A

I

D

6

4

2

1500

1200

900

600

C − Capacitance (pF)

300

0

0 4 8 12 16 20

1.6

1.4

1.2

− On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

Capacitance

C

iss

C

oss

VDS − Drain-to-Source Voltage (V)

C

rss

On-Resistance vs. Junction Temperature

VGS = 4.5 V

= 5.0 A

I

D

0

0 4 8 12 16 20

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

20

10

TJ = 150_C

1

− Source Current (A)I

0.1

S

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 71338
S-50574—Rev. E, 04-Apr-05

Qg − Total Gate Charge (nC)

TJ = 25_C

0.6

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

0.20

W )

− On-Resistance (r

DS(on)

0.15

0.10

0.05

0.00
02468

ID = 5.0 A

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Si2312DS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

0.2

0.1

ID = 250 mA

−0.0

−0.1

Variance (V)V

GS(th)

−0.2

−0.3

−0.4

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C)

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

−3

Single Pulse Power

12

10

8

6

Power (W)

4

2

0

0.01

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

TA = 25_C

1

Time (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

2

thJA

thJA

100

t

1

t

2

(t)

10

= 166_C/W

100 6000.1

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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?71338.

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Document Number: 71338

S-50574—Rev. E, 04-Apr-05

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Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1