Page 1
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), [email protected], [email protected] < 31mΩ
RDS(ON), [email protected], [email protected] < 37mΩ
RDS(ON), [email protected], [email protected] < 85mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SOT-23-3L
REF.
A 2.70 3.10 G 1.90 REF.
B 2.65 2.95 H 1.00 1.30
C 1.50 1.70 K 0.10 0.20
D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15
F 0.45 0.55 M 0° 10°
Millimeter Millimeter
Min.
Max.
REF.
SI2312
G
Min. Max.
D
S
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) R
TA = 25oC
TA = 75oC
VDS 20
VGS +
ID 4.9
IDM 15
PD
TJ, T
θJA
stg
0.75
0.48
-55 to 150
8
140
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
V
A
W
o
C
o
C/W
Page 2
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Symbol
BV
VGS = 0V, ID = 250uA 20 V
DSS
R
VGS = 4.5V, ID = 5.0A 21.0 31.0
DS(on)
R
VGS = 2.5V, ID = 4.5A 24.0 37.0
DS(on)
R
VGS = 1.8V, ID = 4.0A 50.0 85.0
DS(on)
V
VDS =VGS, ID = 250uA 0.4 1 V
GS(th)
I
VDS = 20V, VGS = 0V 1 uA
DSS
I
VGS = ± 8V, VDS = 0V ± 100 nA
GSS
gfs VDS = 15V, ID = 5.0A 40
Qg
Qgs
Qgd
t
d(on)
tr
t
d(off)
tf
C
iss
C
oss
C
rss
IS 1.7 A
VSD IS = 1.8A, VGS = 0V 1.2 V
VDS = 10V, ID = 5.0A
VGS = 4.5V
VDD = 10V, RL=10Ω
ID = 1A, V
RG = 6Ω
V
= 8V, VGS = 0V
DS
f = 1.0 MHz
GEN
= 4.5V
Min. Typ.
11.2 14
1.4
2.2
15 25
40 60
48 70
31 45
500
300
140
SI2312
Miax.
S
Unit
mΩ
nC
ns
pF
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
Page 3
20V N-Channel Enhancement Mode MOSFET
SI2312
３
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
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