Datasheet si2306ds Datasheet

N-Channel 30-V (D-S) MOSFET

30

Conti

t (TJ = 150_C)

a

b

I

A

b

Si2306DS

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

0.057 @ VGS = 10 V 3.5

0.094 @ VGS = 4.5 V 2.8

-

(W) I

DS(on)

(A)

D

TO-236

(SOT-23)

1

G

3

D

2

S

Top View

Si2306DS (A6)*

*Marking Code

Ordering Information: Si2306DS-T1

FEATURES

D TrenchFETr Power MOSFET D 100% R

Tested

g

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

a,

b

nuous Drain Curren

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

=

a,

,

_

a, b

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

30

"20

3.5

2.8

16

1.25

0.80

-55 to 150 _C

V

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Notes a. Surface Mounted on FR4 Board. b. t v 5 sec.

Document Number: 70827 S-31873—Rev. C, 15-Sep-03

a

t v 5 sec

Steady State

R

thJA

130

100

_C/W

www.vishay.com

1

Si2306DS

V

C

DS

,

GS

,

D

DS

,

GS

,

p

VDD = 15 V, RL = 15 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Gate Charge Q

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

V

SD

g

gt

gs

gd

g

iss

oss

rss

Switching

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

d(on)

r

d(off)

f

VDS = 0 V, I

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= 250 mA 30

D

= 250 mA 1

D

"100 nA

VDS = 30 V, VGS = 0 V 0.5

VDS = 30 V, VGS = 0 V, TJ = 55_C 10

VDS w 4.5 V, VGS = 10 V 6

VDS w 4.5 V, VGS = 4.5 V 4

VGS = 10 V, ID = 3.5 A 0.046 0.057

VGS = 4.5 V, ID = 2.8 A

0.070 0.094

VDS = 4.5 V, ID = 3.5 A 6.9 S

IS = 1.25 A, VGS = 0 V 0.8 1.2 V

V

= 15 V, VGS = 5 V, ID = 3.5 A 4.2 7

DS

8.5 20

V

= 15 V, VGS = 10 V, ID = 3.5 A

DS

1.9

1.35

0.5 2.4 W

555

VDS = 15 V, VGS = 0 V, f= 1 MHz

120

60

9 20

VDD = 15 V, RL = 15 W

ID ^ 1 A, V

GEN

= 10 V, RG = 6 W

7.5 18

17 35

5.2 12

mA

A

W

n

pF

ns

www.vishay.com

2

Document Number: 70827

S-31873—Rev. C, 15-Sep-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Si2306DS

Vishay Siliconix

16

Output Characteristics Transfer Characteristics

12

8

- Drain Current (A)I

D

4

0

0246810

0.5

0.4

W )

0.3

0.2

- On-Resistance (r

DS(on)

0.1

0.0 0 4 8 12 16

VGS = 10 thru 5 V

4 V

3 thru 1 V

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

VGS = 4.5 V

VGS = 10 V

16

12

8

- Drain Current (A)I

D

4

0

012345

VGS - Gate-to-Source Voltage (V)

TC = 125_C

25_C

Capacitance

800

700

C

600

500

400

300

C - Capacitance (pF)

200

100

0

0 6 12 18 24 30

C

oss

C

rss

iss

-55_C

10

VDS = 15V I

= 3.5 A

D

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0246810

Qg - Total Gate Charge (nC)

Document Number: 70827 S-31873—Rev. C, 15-Sep-03

ID - Drain Current (A)

Gate Charge

1.6

1.4

W)

1.2

(Normalized)

1.0

- On-Resistance (r

DS(on)

0.8

0.6

V

- Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 10 V I

= 3.5 A

D

-50 -25 0 25 50 75 100 125 150

T

- Junction Temperature (_C)

J

www.vishay.com

3

Si2306DS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10

TJ = 150_C

- Source Current (A)I

S

1

0.00 0.2 0.4 0.6 0.8

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage

0.4

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.2

-0.0

ID = 250 mA

TJ = 25_C

1.0 1.2

W )

- On-Resistance (r

DS(on)

0.5

0.4

0.3

0.2

ID = 3.5 A

0.1

0.0 0246810

Single Pulse Power

12

10

8

-0.2

Variance (V)V

GS(th)

-0.4

-0.6

-0.8

-50 -25 0 25 50 75 100 125 150

TJ - Temperature (_C)

2

Normalized Thermal Transient Impedance, Junction-to-Ambient

1

Duty Cycle = 0.5

0.2

0.1

0.05

Thermal Impedance

0.02

Normalized Effective Transient

Single Pulse

0.01

-4

10

-3

10

6

Power (W)

4

TA = 25_C

2

0

0.01

1

10 5000.1

100

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

t

(t)

100

1

2

= 130_C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

-2

10

-1

1 10 50010

Square Wave Pulse Duration (sec)

www.vishay.com

4

Document Number: 70827

S-31873—Rev. C, 15-Sep-03

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1