Datasheet Si2305DS Datasheet (Vishay)

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Si2305DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 8

Ordering Information:

DS(on)

0.052 at V

0.071 at V

0.108 at V

G

1

S

2

GS

Si2305DS (A5)*

*Marking Code

Si2305DS-T1 Si2305DS-T1-E3 (Lead (Pb)-free)

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8 V

(A)

D

± 3.5

± 3

± 2

TO-236

(SOT-23)

D

3

Top View

FEATURES

• TrenchFET® Power MOSFETs: 1.8 V Rated

Pb-free

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

a, b

Operating Junction and Storage Temperature Range

= 25 °C

T

A

T

= 70 °C

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 8

± 8

± 3.5

± 2.8

± 12

- 1.6

1.25

0.8

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 sec

Steady State 130

Notes: a. Surface Mounted on FR4 Board. b. t ≤ 5 sec.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

R

thJA

100

°C/W

Document Number: 70833 S-61190-Rev. D, 03-Jul-06

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1

Si2305DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Min Typ Max

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

b

Tur n - O n T i m e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

V

DS

g

V

DS

VDS = - 4 V, VGS = 0 V, f = 1 MHz

≅ - 1.0 A, V

I

D

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 8 V, V

DS

= - 8 V, V

≤ - 5 V, V

V

DS

V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 3.5 A

GS

V

= - 2.5 V, ID = - 3 A

GS

V

= - 1.8 V, ID = - 2 A

GS

= 0 V, TJ = 55 °C

GS

= - 4.5 V

GS

= - 2.5 V

GS

VDS = - 5 V, ID = - 3.5 A

IS = - 1.6 A, V

= - 4 V, V

V

DD

= - 4 V, RL = 4 Ω

GS

= - 4.5 V, ID ≅ - 3.5 A

GS

= - 4.5 V, RG = 6 Ω

GEN

- 8

- 0.45 - 0.8

= 0 V

- 6

- 3

= 0 V

Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Limits

Unit

± 100 nA

- 1

- 10

µA

0.044 0.052

0.060 0.071

0.087 0.108

8.5 S

- 1.2 V

10 15

2

nCGate-Source Charge

2

1245

375

pFOutput Capacitance

210

13 20

25 40

55 80

ns

19 35

V

A

Ω

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Document Number: 70833

S-61190-Rev. D, 03-Jul-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

Si2305DS

Vishay Siliconix

12

VGS = 4.5 thru 2.5 V

10

8

6

4

- Drain Current (A)I

D

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

- Drain-to-Source Voltage (V)

V

DS

1.5 V

1, 0.5 V

Output Characteristics

0.30

0.25

0.20

0.15

- On-Resistance (Ω)r

DS(on)

0.10

0.05

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

0

024681012

ID - Drain Current (A)

On-Resistance vs. Drain Current

2 V

12

10

8

6

4

- Drain Current (A)I

D

2

0

0 0.5 1.0 1.5 2.0 2.5

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

25 °C

125 °C

Transfer Characteristics

2000

1600

C

iss

1200

800

C - Capacitance (pF)

400

0

02468

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

5

VDS = 4 V

= 3.5 A

I

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0246810

Document Number: 70833 S-61190-Rev. D, 03-Jul-06

Qg - Total Gate Charge (nC)

Gate Charge

- On-Resistance r

DS(on)

1.4

VGS = 4.5 V

= 3.5 A

I

1.2

1.0

(Normalized)

0.8

0.6

D

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Si2305DS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

30

10

TJ = 150 °C

1

- Source Current (A)I

S

0.1

0.00 0.2 0.4 0.6 0.8

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

0.4

ID = 250 µA

Variance (V)V

GS(th)

0.3

0.2

0.1

0.0

- 0.1

TJ = 25 °C

1.0 1.2

- On-Resistance (Ω)r

DS(on)

Power (W)

0.5

0.4

0.3

0.2

ID = 3.5 A

0.1

0

02468

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

12

10

8

6

4

TA = 25 °C

2

- 0.2

- 50 - 25 0 25 50 75 100 125 150 TJ - Temperature ( °C)

Threshold Voltage

0

0.01

1

10 5000.1

Time (sec)

Single Pulse Power

100

2

1

Duty Cycle = 0.5

0.1

Thermal Impedance

Normalized Effective Transient

0.01

0.2

0.1

0.05

0.02

Single Pulse

- 4

10

- 3

10

- 2

10

- 1

1 10 50010

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

t

1

t

2

= 130 °C/W

thJA

(t)

thJA

100

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70833.

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Document Number: 70833

S-61190-Rev. D, 03-Jul-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

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