Datasheet si2305ad Datasheet

New Product

P-Channel 8-V (D-S) MOSFET

Si2305ADS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.040 at V

- 8

0.088 at V

(Ω)I

DS(on)

= - 4.5 V - 4.1

GS

= - 2.5 V - 3.4

GS

= - 1.8 V - 2.0

GS

(A) Qg (Typ.)

D

7.8 nC0.060 at V

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Test e d

g

APPLICATIONS

• Load Switch

• DC/DC Converter

TO-236

(SOT-23)

1

G

S

2

Si2305ADS (5A)*

* Marking Code

Ordering Information:

D

3

Top View

Si2305ADS-T1-E3 (Lead (Pb)-free)
Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

T

= 25 °C

C

T

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

C

= 25 °C

T

A

TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

T

= 25 °C

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C 1.1

C

T

= 25 °C

A

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) 260

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.

V

DS

V

GS

- 8

± 8

V

- 5.4

I

D

I

DM

I

S

- 4.3

- 4.1

- 3.3

- 10

- 1.4

- 0.8

a, b

a, b

a, b

A

1.7

P

D

, T

T

J

stg

a, b

0.96

a, b

0.62

- 50 to 150

W

°C

Document Number: 69940
S09-0538-Rev. D, 06-Apr-09

www.vishay.com

1

New Product

Si2305ADS

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 175 °C/W.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage
V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n-On D e l ay Tim e

Rise Time

Turn-Off DelayTime

Fall Time

Tur n-On D e l ay Tim e

Rise Time

Turn-Off DelayTime

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current
Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

b

a, b

t ≤ 10 s

Steady State

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

a

a

a

a

I

D(on)

R

DS(on)

C

C

C

Q

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

I

V

Q

g

Q

R

I

SM

t

t

t

fs

iss

oss

rss

gs

gd

t

r

t

f

t

r

t

f

S

SD

rr

a

b

g

g

rr

V

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= - 8 V, V

V

DS

V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 4.1 A

GS

V

= - 2.5 V, ID = - 3.4 A

GS

= - 1.8 V, ID = - 2.0 A

V

GS

V

DS

= - 4 V, V

V

DS

= - 4 V, V

V

DS

= - 4 V, V

V

DS

V

= - 4 V, RL = 1.2 Ω

DD

≅ - 3.3 A, V

I

D

V

= - 4 V, RL = 1.2 Ω

DD

I

≅ - 3.3 A, V

D

IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C

R

thJA

R

thJF

100 130

60 75

°C/W

- 8 V

ID = - 250 µA

- 55

2.1

- 0.45 - 0.8 V

± 100 nA

= - 8 V, VGS = 0 V

= 0 V, TJ = 55 °C

GS

= - 4.5 V

GS

- 5 A

- 1

- 10

0.032 0.040

0.048 0.060

0.070 0.088

= - 5 V, ID = - 4.1 A

8S

740

= 0 V, f = 1 MHz

GS

290

190

= - 4.5 V, ID = - 4.1 A

GS

7.8 15

4.5 9

= - 2.5 V, ID = - 4.1 A

GS

1.2

1.6

f = 1 MHz 1.4 7 14 Ω

13 20

35 53

= - 4.5 V, Rg = 1 Ω

GEN

32 48

10 20

510

11 17

= - 8 V, Rg = 1 Ω

GEN

22 33

16 24

TC = 25 °C

- 1.4

- 10

IF = - 3.3 A

- 0.8 - 1.2 V

33 50 ns

14 21 nC

14

19

mV/°C

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com
2

Document Number: 69940

S09-0538-Rev. D, 06-Apr-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2305ADS

Vishay Siliconix

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS=4.5V thru 2 V

VGS=0.5V

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.10

0.08

0.06

- On-Resistance (Ω)R

DS(on)

0.04

VGS=1.8V

VGS=2.5V

VGS=4.5V

VGS=1.5V

VGS=1V

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0

TC= 125 °C

TC= 25 °C

TC= - 55 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

1200

900

600

C - Capacitance (pF)

300

C

iss

C

oss

C

rss

0.02
02468 10

On-Resistance vs. Drain Current and Gate Voltage

4.5

ID=4.1A

3.6

2.7

1.8

- Gate-to-Source Voltage (V)

GS

0.9

V

0.0

0.0 1.5 3.0 4.5 6.0 7.5 9.0

Document Number: 69940
S09-0538-Rev. D, 06-Apr-09

ID- Drain Current (A)

VDS=4V

VDS=6.4V

Qg- Total Gate Charge (nC)

Gate Charge

0

02468

VDS- Drain-to-Source Voltage (V)

Capacitance

1.5

1.3

1.1

- On-Resistance
(Normalized)

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

VDS=2.5V,ID=3.4A

VDS=4.5V,ID=4.1A

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

www.vishay.com

3

New Product

Si2305ADS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TJ= 150 °C

1

- Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD-Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.7

0.6
ID= 250 µA

0.5

(V)V

TJ= 25 °C

0.10

ID=4.1A

0.08

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

0.00
02468

VGS- Gate-to-Source Voltage (V)

TA= 125 °C

TA= 25 °C

On-Resistance vs. Gate-to-Source Voltage

30

20

GS(th)

0.4

0.3

0.2

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

0.01

0.1

* V

Safe Operating Area, Junction-to-Ambient

*

DS(on)

TA= 25 °C

Single Pulse

V

- Drain-to-Source Voltage (V)

DS

> minimum VGSat which R

GS

Power (W)

10

0

0.001 0.01 0.1 1 10 100

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms
1s

10 s
DC

1

is specified

DS(on)

10

www.vishay.com
4

Document Number: 69940

S09-0538-Rev. D, 06-Apr-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

6.0

4.5

3.0

- Drain Current (A)

D

I

1.5

0.0
0 25 50 75 100 125 150

T

- Case Temperature (°C)

C

Current Derating*

Si2305ADS

Vishay Siliconix

2.0

1.5

1.0

Power (W)

0.5

0.0
0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power, Junction-to-Case

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

1.00

0.75

0.50

Power (W)

0.25

0.00
0 25 50 75 100 125 150

-Ambient Temperature (°C)

T

A

Power, Junction-to-Ambient

limit.

Document Number: 69940
S09-0538-Rev. D, 06-Apr-09

www.vishay.com

5

New Product

Si2305ADS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

Thermal Impedance

Normalized Effective Transient

0.001

-4

10

Single Pulse

-3

10

-2

10

-1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

2

JM-TA=PDMZthJA

100

thJA

t

1

t

2

(t)

= 175 °C/W

000101110

Thermal Impedance

Normalized Effective Transient

1

Duty Cycle = 0.5

0.1

0.01

-4

10

0.2

0.1

Single Pulse

0.02

0.05

-3

10

-2

10

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

-1

110

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69940

www.vishay.com
6

.

Document Number: 69940

S09-0538-Rev. D, 06-Apr-09

SOT-23 (TO-236): 3-LEAD

b

3

1

Package Information

Vishay Siliconix

E

E

1

2

S

A

A

2

A

1

Dim

A 0.89 1.12 0.035 0.044

A

1

A

2

b 0.35 0.50 0.014 0.020

c 0.085 0.18 0.003 0.007

D 2.80 3.04 0.110 0.120

E 2.10 2.64 0.083 0.104

E

1

e 0.95 BSC 0.0374 Ref

e

1

L 0.40 0.60 0.016 0.024

L

1

S 0.50 Ref 0.020 Ref

q 3°8°3°8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

e

e

1

D

0.10 mm

Seating Plane

C

0.004"

C

C

q

L

L

1

MILLIMETERS INCHES

Min Max Min Max

0.01 0.10 0.0004 0.004

0.88 1.02 0.0346 0.040

1.20 1.40 0.047 0.055

1.90 BSC 0.0748 Ref

0.64 Ref 0.025 Ref

0.25 mm

Gauge Plane

Seating Plane

Document Number: 71196
09-Jul-01

www.vishay.com

1

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

AN807

Vishay Siliconix

Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis

of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.

ambient air. This pattern uses all the available area underneath the
body for this purpose.

0.114

2.9

0.081

2.05

0.150

3.8

0.059

1.5

0.0394

FIGURE 1. Footprint With Copper Spreading

1.0

0.037

0.95

Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the

Document Number: 70739
26-Nov-03

A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.

www.vishay.com

1

RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826

Vishay Siliconix

0.106
(2.692)

0.037

(0.950)

0.053

(1.341)

0.097

(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.022

(0.559)

0.049

0.029

(1.245)

(0.724)

Return to Index

Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25

Return to Index

APPLICATION NOTE

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1