Datasheet SI2304DDS Datasheet (Vishay)

New Product

N-Channel 30-V (D-S) MOSFET

Si2304DDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.060 at V

30

0.075 at V

DS(on)

(Ω)

GS

GS

= 10 V

= 4.5 V

a

I

(A)

D

3.6

3.6

Qg (Typ.)

2.1 nC

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• DC/DC Converter

TO-236

(SOT-23)

G

1

3

D

2

S

Top View

Si2304DDS (P4)*

* Marking Code

Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T
T
T

Pulsed Drain Current

T

Continuous Source-Drain Diode Current

T
T

Maximum Power Dissipation

T
T

TA = 70 °C
Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 70 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

30

± 20

a

3.6

3.3

3.3

2.7
15

1.4

b, c

0.9

1.7

1.1

b, c

1.1

b, c

0.7

- 55 to 150
260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.

Document Number: 65175
S09-1496-Rev. A, 10-Aug-09

b, d

t ≤ 5 s R

thJA

R

thJF

90 115
60 75

°C/W

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1

New Product

Si2304DDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.

V

DS

V

V

DS

V

DS

I

D

I

D

IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 3.2 A

GS

V

= 4.5 V, ID = 2.8 A

GS

V

= 15 V, ID = 4.8 A

DS

= 15 V, V

DS

= 15 V, V

= 15 V, V

V

= 15 V, RL = 5.6 Ω

DD

≅ 2.7 A, V

V

= 15 V, RL = 5.6 Ω

DD

≅ 2.7 A, V

TC = 25 °C

IS = 2.7 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

1.2 2.2 V

= 0 V

10 A

- 5

31

mV/°C

± 100 nA

1

10

0.049 0.060

0.061 0.075

11 S

235

= 0 V, f = 1 MHz

GS

45

17

= 10 V, ID = 3.4 A

GS

4.5 6.7

2.1 3.2

= 4.5 V, ID = 3.4 A

GS

0.85

0.65

f = 1 MHz 0.8 4.4 8.8 Ω

12 20

50 75

= 4.5 V, Rg = 1 Ω

GEN

12 20

22 35

510

12 20

= 10 V, Rg = 1 Ω

GEN

10 15

510

1.4

15

GS

= 0 V

0.8 1.2 V

10 20 ns

510nC

6

4

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2304DDS

Vishay Siliconix

15

12

9

6

- Drain Current (A)I

D

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

- Drain-to-Source Voltage (V)

DS

VGS=10V thru 4 V

Output Characteristics

0.10

0.08

VGS=4.5V

0.06

0.04

- On-Resistance (Ω)R

DS(on)

0.02

VGS=10V

VGS=3V

5

4

3

TC= - 55 °C

2

- Drain Current (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

- Gate-to-Source Voltage (V)

GS

TC= 25 °C

TC= 125 °C

Transfer Characteristics

300

C

iss

C

oss

C - Capacitance (pF)

250

200

150

100

50

0.00
03691215

On-Resistance vs. Drain Current and Gate Voltage

10

ID=3.4A

8

6

4

- Gate-to-Source Voltage (V)
2

GS

V

0

012345

Document Number: 65175
S09-1496-Rev. A, 10-Aug-09

ID- Drain Current (A)

VDS=7.5V

VDS=24V

VDS=15V

Qg- Total Gate Charge (nC)

Gate Charge

C

rss

0

0 5 10 15 20 25 30

VDS- Drain-to-Source Voltage (V)

Capacitance

1.6

1.5

ID=3.2A

1.4

1.3

1.2

1.1

- On-ResistanceR
(Normalized)

1.0

DS(on)

0.9

0.8

0.7

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

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New Product

Si2304DDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TJ= 150 °C

- Source Current (A)I
1

S

0.1

0.0 0.3 0.6 0.9 1.2 1.5

VSD-Source-to-Drain Voltage (V)

TJ= 25 °C

Source-Drain Diode Forward Voltage

2.4

2.2

2.0

(V)V

1.8

GS(th)

1.6

ID= 250 µA

0.14

ID=3.2A

0.12

0.10

- On-Resistance (Ω)

0.08

DS(on)

R

0.06

0.04
02468 10

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ=25 °C

On-Resistance vs. Gate-to-Source Voltage

25

20

15

Power (W)

10

1.4

1.2

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

0.1 1 10 100

* V

GS

Safe Operating Area, Junction-to-Ambient

*

DS(on)

BVDSS Limited

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

5

0

DS(on)

10 10000.10.010.001 1001

Time (s)

Single Pulse Power

100 µs

1ms

10 ms

100 ms

1s,10s
DC

is specified

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Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2304DDS

Vishay Siliconix

5

4

Package Limited

3

2

- Drain Current (A)

D

I

1

0

0 255075100125150

- Case Temperature (°C)

T

C

Current Derating*

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

2.0

1.5

1.0

Power (W)

0.5

0.0
25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating

limit.

Document Number: 65175
S09-1496-Rev. A, 10-Aug-09

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New Product

Si2304DDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

0.2

Thermal Impedance

Normalized Effective Transient

Thermal Impedance

Normalized Effective Transient

0.1

0.01

0.1

-4

10

1

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

10

0.05

-3

-2

10

-1

1

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

JM-TA=PDMZthJA

4. Surface Mounted

10

t

1

t

2

t

1

t

2

=130 °C/W

thJA

(t)

100

100010

0.01

-4

10

-3

10

-2

10

-1

110

Square WavePulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65175

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6

.

Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

SOT-23 (TO-236): 3-LEAD

b

3

1

Package Information

Vishay Siliconix

E

E

1

2

S

A

A

2

A

1

Dim

A 0.89 1.12 0.035 0.044

A

1

A

2

b 0.35 0.50 0.014 0.020

c 0.085 0.18 0.003 0.007

D 2.80 3.04 0.110 0.120

E 2.10 2.64 0.083 0.104

E

1

e 0.95 BSC 0.0374 Ref

e

1

L 0.40 0.60 0.016 0.024

L

1

S 0.50 Ref 0.020 Ref

q 3°8°3°8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

e

e

1

D

0.10 mm

Seating Plane

C

0.004"

C

C

q

L

L

1

MILLIMETERS INCHES

Min Max Min Max

0.01 0.10 0.0004 0.004

0.88 1.02 0.0346 0.040

1.20 1.40 0.047 0.055

1.90 BSC 0.0748 Ref

0.64 Ref 0.025 Ref

0.25 mm

Gauge Plane

Seating Plane

Document Number: 71196
09-Jul-01

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1

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

AN807

Vishay Siliconix

Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.

See Application Note 826, Recommended Minimum Pad

Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis

of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.

ambient air. This pattern uses all the available area underneath the
body for this purpose.

0.114

2.9

0.081

2.05

0.150

3.8

0.059

1.5

0.0394

FIGURE 1. Footprint With Copper Spreading

1.0

0.037

0.95

Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the

Document Number: 70739
26-Nov-03

A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.

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RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826

Vishay Siliconix

0.106
(2.692)

0.037

(0.950)

0.053

(1.341)

0.097

(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.022

(0.559)

0.049

0.029

(1.245)

(0.724)

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Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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Document Number: 91000