Datasheet si2302 Datasheet

20V N-Channel Enhancement Mode MOSFET

SI2302

VDS= 20V

RDS(ON), Vgs@ 4.5V, Ids@

3.6A

RDS(ON), Vgs@ 2.5V, Ids@ 2.0A

85m

115m

Ω

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Package Dimensions

SOT-23

REF.

A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15

F 0.45 0.55 M

Millimeter

Min.

Max.

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

G

REF.

D

S

Millimeter

Min. Max.

0° 10°

Parameter Symbol Limit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Junction-to-Ambient Thermal Resistance (PCB mounted)

Notes

1)

Pulse width limited by maximum junction temperature.

2)

Surface Mounted on FR4 Board, t v 5 sec.

3)

Surface Mounted on FR4 Board.

1)

2)

TA = 25 TA = 75oC

2)

3)

o

VDS 20 VGS ±8

2.3

I

D

IDM 8

P

D

TJ, T

-55 to 150

stg

R

thJA

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1.25

0.8

100

166

Unit

V

A

W

o

C

o

C/W

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20V N-Channel Enhancement Mode MOSFET

SI2302

ELECTRICAL CHARACTERISTICS

Parameter Test Condition

Static

Drain-Source Breakdown Voltage BV

Drain-Source On-State Resistance

Gate Threshold V olt a ge V

Zero Gate Voltage Drain Current 0

Gate Body Leakage I Forward Transcon duc t ance g

Dynamic

Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Turn-On Delay Time t Turn-On Rise Time t Turn-Off Delay Time t Turn-Off Fall Time t Input Capacitance C Output Capacitance C Reverse Transfer Cap ac it a nce C

Source-Drain Diode

Max. Diode Forward Current I Diode Forward Voltage V

1)

Pulse test: pulse width <= 300us, duty cycle<= 2%

1)

I

1)

Symbol

DSS

R

DS(on)

GS(th)

DSS

GSS

fs

g

gs

gd

d(on)

r

d(off)

f

iss

oss

rss

S

SD

Min. Typ.

VGS = 0V, ID = 10uA 20 V V

= 4.5V, ID = 3.6A

GS

VGS = 2.5V, ID = 3.1A VDS =VGS, ID = 250uA 0.6 V

V

= 16V, VGS = 0V

DS

= 20V, VGS = 0V TJ=55

V

DS

VGS = ± 8V, VDS = 0V ±100 nA

VDS = 5V, ID = 3.6A 10 S

= 10V, ID = 3.6A

V

DS

= 4.5V

V

GS

= 10V, RL=5.5Ω

V

DD

I

3.6A,V

D

^

RG = 6

= 10V, VGS = 0V

V

DS

f = 1.0 MHz

IS = 1.6A, VGS = 0V

= 4.5V

GEN

Ω

o

C

70 85 115

1

5.4 10

0.65

1.6 12 25 36 60 34 60 10 25

340 115

33

Miax. Unit

85

10

1.6 A

1.2 V

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mΩ

uA

nC

ns

pF

20V N-Channel Enhancement Mode MOSFET

SI2302

– Drain Current (A)I

D

0.15

0.12

 )

0.09

0.06

– On-Resistance (r

0.03

DS(on)

10

8

6

4

2

0

012345

Output Characteristics Transfer Characteristics

VGS = 5 thru 2.5 V

2 V

0, 0.5, 1 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

VGS = 2.5 V

1.5 V

VGS = 4.5 V

10

8

6

T

= 125C

25C

Capacitance

C

oss

C

iss

4

– Drain Current (A)I

D

2

0

0 0.5 1.0 1.5 2.0 2.5

VGS – Gate-to-Source Voltage (V)

1000

800

600

400

C – Capacitance (pF)

200

C

rss

–55C

 )

(Normalized)

– On-Resistance (r

DS(on)

0

0 4 8 12 16 20

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Junction T emperature

1.8 VGS = 4.5 V

ID = 3.6 A

1.6

1.4

1.2

1.0

0.8

0.6

–50 0 50 100 150

0

0246810

ID – Drain Current (A)

5

VDS = 10 V ID = 3.6 A

4

3

2

– Gate-to-Source Voltage (V)

1

GS

V

0

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Gate Charge

Qg – Total Gate Charge (nC)

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– Junction Temperature (C)

T

J

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20V N-Channel Enhancement Mode MOSFET

Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source Voltage

10

0.20

0.16

W )

SI2302

TJ = 150C

TJ = 25C

– Source Current (A)I

S

1

0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

ID = 250 mA

Variance (V)V

GS(th)

0.2

0.1

–0.0

–0.1

–0.2

–0.3

0.12 ID = 3.6 A

0.08

– On-Resistance (r

0.04

DS(on)

0

02468

14

12

10

8

6

Power (W)

4

2

TC = 25C

Single Pulse

–0.4

–50 0 50 100 150

TJ – Temperature (C)

2

1

Duty Cycle = 0.5

0.2

0.1

0.01

0.05

0.02

–4

10

Thermal Impedance

Normalized Effective Transient

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Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

–3

10

–2

10

Square Wave Pulse Duration (sec)

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–1

10

0

0.01 0.10 1.00 10.00

1

Time (sec)

10

30

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