Datasheet si2301ads Datasheet

Si2301ADS

PRODUCT SUMMARY

VDS (V) r

–20

0.130 @ V

0.190 @ V

New Product

P-Channel 2.5-V (G-S) MOSFET

(W) ID (A)

DS(on)

= –4.5 V –2.0

GS

= –2.5 V –1.6

GS

G

1

S

2

b

TO-236

(SOT-23)

Top View

Si2301DS (1A)*

*Marking Code

D

3

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 sec Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

b

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current
Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

a

b

_

b

TA= 25_C –2.0 –1.75
TA= 70_C

TA= 25_C 0.9 0.7
TA= 70_C

DS
GS

I

D

I

DM

I

S

P

D

stg

–1.6 –1.4

–0.75 –0.6

0.57 0.45

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

b

R

c

thJA

115 140
140 175

–20
"8

–10

–55 to 150 _C

_C/W

V

A

W

Document Number: 71835
S-20617—Rev. B, 29-Apr-02

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1

Si2301ADS

D

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Conditions Min Typ Max Unit

Static

Drain-Source Breakdown V oltage V
Gate-Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage V

Dynamic

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

b

Switching

a

a

a

c

(BR)DSS

I

r

DS(on)

GS(th)

GSS

DSS

D(on)

g

fs

SD

g

gs

gd

iss

oss

rss

VGS = 0 V, ID = –250 mA –20

VDS = VGS, ID = –250 mA –0.45 –0.95

VDS = 0 V, VGS = "8 V "100 nA
VDS = –16 V, VGS = 0 V –1

VDS = –16 V, VGS = 0 V, TJ = 55_C –10

VDS v –5 V, VGS = –4.5 V –6
VDS v –5 V, VGS = –2.5 V –3

VGS = –4.5 V, ID = –2.8 A 0.093 0.130

VGS = –2.5 V, ID = –2.0 A 0.140 0.190

VDS = –5 V, ID = –2.8 A 6.5 S
IS = –0.75 A, VGS = 0 V –0.80 –1.2 V

VDS = –6 V, VGS = –4.5 V

I

^ –2.8 A

ID ^ –2.8 A

VDS = –6 V, VGS = 0, f = 1 MHz

Limits

4.2 10

0.8

0.8
500
115

62

V

mA

A

W

nC

pF

t

Turn-On Time

Turn-Off Time

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600

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d(on)

t

d(off)

t

r

t

f

VDD = –6 V, RL = 6 W

ID ^ –1.0 A, V

R

= 6 W

G

GEN

= –4.5 V

2

6 25
30 60
25 70
10 60

Document Number: 71835

S-20617—Rev. B, 29-Apr-02

ns

Si2301ADS

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10

8

6

4

– Drain Current (A)I

D

2

0

012345

0.6

Output Characteristics Transfer Characteristics

VGS = 5, 4.5, 4, 3.5, 3 V

2.5 V

2 V

0, 0.5, 1 V

VDS – Drain-to-Source Voltage (V)

1.5 V

On-Resistance vs. Drain Current

Vishay Siliconix

10

8

6

4

– Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS – Gate-to-Source Voltage (V)

Capacitance

800

TC = –55_C

25_C

125_C

0.5

W )

0.4

0.3

– On-Resistance (r

0.2

DS(on)

0.1

0.0
0246810

5

VDS = 10 V
I

4

3

2

– Gate-to-Source Voltage (V)

1

GS

V

= 3.6 A

D

VGS = 2.5 V

VGS = 4.5 V

ID – Drain Current (A)

Gate Charge

600

400

C – Capacitance (pF)

200

C

0

048121620

1.6

1.4

W )

1.2

1.0

(Normalized)

– On-Resistance (r

0.8

DS(on)

C

iss

C

oss

rss

V

– Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 4.5 V
I

= 3.6 A

D

0

012345

Document Number: 71835
S-20617—Rev. B, 29-Apr-02

Qg – Total Gate Charge (nC)

0.6

–50 –25 0 25 50 75 100 125 150

– Junction Temperature (_C)

T

J

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Si2301ADS

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1

TJ = 150_C

TJ = 25_C

0 0.2 0.4 0.6 0.8 1.0 1.2

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

– Source Current (A)I

S

10

0.1

0.01

0.001

0.4

0.6

0.5

W )

0.4

ID = 3.6 A

– On-Resistance (r

DS(on)

0.3

0.2

0.1

0.0
02468

10

0.3

0.2

0.1

Variance (V)V

0.0

GS(th)

–0.1

–0.2

–50 –25 0 25 50 75 100 125 150

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

ID = 250 mA

TJ – Temperature (_C) Time (sec)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

–4

–3

10

8

6

4

Power (W)

2

0

0.01 0.10 1.00 10.00 100.00 1000.00

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

–2

10

–1

10

1 10 600

Square Wave Pulse Duration (sec)

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

4. Surface Mounted

2

thJA

thJA

t

1

t

2

(t)

= 62.5_C/W

100

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Document Number: 71835

S-20617—Rev. B, 29-Apr-02

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All product specifications and data are subject to change without notice.

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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1