Page 1
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@
3.0A
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
70m
80m
Ω
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications
SI2300
Package Dimensions
D
SOT-23(PACKAGE)
G
REF.
A 2.70 3.10 G 1.90 REF.
B 2.40 2.80 H 1.00 1.30
C 1.40 1.60 K 0.10 0.20
D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15
F 0.45 0.55 M
Millimeter
Min.
Max.
REF.
Millimeter
Min. Max.
0° 10°
S
V
A
W
o
C
o
C/W
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t v 5 sec.
1)
2)
TA = 25oC 1.25
TA = 75oC
VDS 20
VGS ± 12
ID 2.3
IDM 8
PD
TJ, T
-55 to 150
stg
R
JA
θ
0.8
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semiconductor
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Page 2
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA = 25oC unless otherwise noted)
SI2300
Parameter
3)
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
4)
Notes
3)
Short duration test pulse used to minimize self-heating effect.
4)
Pulse test pulse width =300us,duty cycle = 2%.
< <
Symbol
BV
VGS = 0V, ID = 250uA 20 V
DSS
R
VGS = 2.5V, ID = 2.0A 70.0 80.0
DS(on)
R
VGS = 4.5V, ID = 3.0A 60.0 70.0
DS(on)
V
VDS =VGS, ID = 250uA 0.6 0.76 V
GS(th)
I
VDS = 20V, VGS = 0V 1 uA
DSS
I
VGS = ± 12V, VDS = 0V ±100 nA
GSS
gfs VDS = 5V, ID = 4..2A
Qg
VDS = 10V, ID = 3.6A
Qgs
VGS = 4.5V
Qgd
t
d(on)
tr
VDD = 10V, RG = 6Ω
ID = 1A, V
t
d(off)
RL = 5.5Ω
tf
C
iss
V
C
oss
f = 1.0 MHz
C
rss
IS A
VSD IS = 1.6A, VGS = 0V V
Test Condition
=
GS
= 10V, VGS = 0V
DS
4.5V
Min.
Typ.
5
5.4
0.65
.
1.5
12
36
34
10
340
115
33
Miax. Unit
S
10
25
60
60
25
1.6
1.2
mΩ
nC
ns
pF
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Page 3
20V N-Channel Enhancement Mode MOSFET
SI2300
– Drain Current (A)I
D
0.15
0.12
)
0.09
0.06
– On-Resistance (r
0.03
DS(on)
10
8
6
4
2
0
012345
Output Characteristics Transfer Characteristics
VGS = 5 thru 2.5 V
2 V
0, 0.5, 1 V
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 2.5 V
1.5 V
VGS = 4.5 V
10
8
6
T
= 125C
4
– Drain Current (A)I
D
2
0
0 0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
1000
800
600
400
C – Capacitance (pF)
200
C
rss
C
25C
Capacitance
C
C
oss
iss
–55C
0
0246810
ID – Drain Current (A)
5
VDS = 10 V
ID = 3.6 A
4
3
2
– Gate-to-Source Voltage (V)
1
GS
V
0
01234567
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semiconductor
Gate Charge
Qg – Total Gate Charge (nC)
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0
0 4 8 12 16 20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction T emperature
1.8
VGS = 4.5 V
ID = 3.6 A
1.6
)
1.4
1.2
(Normalized)
1.0
– On-Resistance (r
DS(on)
0.8
0.6
–50 0 50 100 150
– Junction Temperature (C)
T
J
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Page 4
20V N-Channel Enhancement Mode MOSFET
Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source Voltage
10
0.20
0.16
W )
SI2300
TJ = 150C
TJ = 25C
– Source Current (A)I
S
1
0.2 0.4 0.6 0.8 1.0 1.2
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
ID = 250 mA
Variance (V)V
GS(th)
0.2
0.1
–0.0
–0.1
–0.2
–0.3
0.12
ID = 3.6 A
0.08
– On-Resistance (r
0.04
DS(on)
0
02468
14
12
10
8
6
Power (W)
4
2
TC = 25C
Single Pulse
–0.4
–50 0 50 100 150
TJ – Temperature (C)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
–4
10
Thermal Impedance
Normalized Effective Transient
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semiconductor
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
–3
10
–2
10
Square Wave Pulse Duration (sec)
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–1
10
0
0.01 0.10 1.00 10.00
1
Time (sec)
10
30
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