Datasheet si1501dl Datasheet

Complementary 20-V (D-S) Low-Threshold MOSFET

N-Ch

l

20

V

PRODUCT SUMMARY

Si1501DL

Vishay Siliconix

Channel V

-

anne

P-Channel −20

DS

(V) r

3.8 @ VGS = −4.5 V −180

5.0 @ VGS = −2.5 V −100

2.0 @ VGS = 4.5 V 250

2.5 @ VGS = 2.5 V 150

() I

DS(on)

D

(mA)

SOT-363

SC-70 (6-Leads)

S

1

G

2

1

3

D

2

Top View

6

D

1

5

G

2

4

S

2

Marking Code

RE XX

Part # Code

YY

Lot Traceability and Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C

TA = 70_C

TA = 25_C

TA = 70_C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Maximum Junction-to-Ambient

Notes a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 71303 S-03840—Rev. B, 21-May-01

a

DS

GS

I

D

DM

P

D

stg

R

thJA

20 −20

"8 "8

250 −180

200 −140

500 −500

0.20

0.13

−55 to 150 _C

625 (Total) _C/W

mA

W

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Si1501DL

N-Channel

P Channel

N-Channel

P Channel

VDD = 3 V, RL = 100 

g

P Channel

I

25 A, V

= −4.5 V, Rg = 10 

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

(BR)DSS

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

a

I

r

DS(on)

Dynamicb

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Switching

Turn-On Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

GS(th)

GSS

DSS

D(on)

g

fs

V

SD

g

gs

gd

iss

oss

rss

d(on)

r

d(off)

f

VGS = 0 V, I

VDS = VGS, I

VDS = 0 V, VGS = "8 V

VDS = 20 V, VGS = 0 V N-Ch 0.001 100

VDS = −20 V, VGS = 0 V P-Ch −0.001 −100

VDS = 20 V, VGS = 0 V, TJ = 55_C N-Ch 1

VDS = −20 V, VGS = 0 V, TJ = 55_C P-Ch −1

VDS w 2.5 V, VGS = 5.0 V N-Ch 120

VDS v −2.5 V, VGS = −5.0 V P-Ch −120

VDS w 4.5 V, VGS = 8.0 V N-Ch 400

VDS v −4.5 V, VGS = −8.0 V P-Ch −400

VGS = 2.5 V, ID = 150 mA N-Ch 1.6 2.5

VGS = −2.5 V, ID = −75 mA P-Ch 4 5

VGS = 4.5 V, ID = 250 mA N-Ch 1.2 2.0

VGS = −4.5 V, ID = −180 mA P-Ch 2.6 3.8

VDS = 2.5 V, ID = 50 mA N-Ch 150

VDS = −2.5 V, ID = − 50 mA P-Ch 200

IS = 50 mA, VGS = 0 V N-Ch 0.7 1.2

IS = −50 mA, VGS = 0 V P-Ch −0.7 −1.2

V

= 5 V, VGS = 4.5 V, ID = 100 mA

DS

V

= −5 V, VGS = −4.5 V, ID = −100 mA

DS

V

DS

V

DS

V

= 3 V, RL = 100 

DD

ID  0.25 A, V

VDD = −3 V, RL = 100 

I

 0.25 A, V

 0.

D

= 10 A N-Ch 20 24

D

= −10 A P-Ch −20 −24

D

= 50 A N-Ch 0.4 0.9 1.5

D

= −50 A P-Ch −0.4 −0.9 −1.5

D

N-Channel

P-Channel

N-Channel

= 5 V, VGS = 0 V

P-Channel

= −5 V, VGS = 0 V

N-Channel

= 4.5 V, Rg = 10 

GEN

P-Channel

= −4.5 V, R

GEN

= 10 

N-Ch "2 "100

P-Ch "2 "100

N-Ch 300 450

P-Ch 300 450

N-Ch 25

P-Ch 25

N-Ch 100

P-Ch 100

N-Ch 15

P-Ch 15

N-Ch 11

P-Ch 11

N-Ch 5

P-Ch 5

N-Ch 7 12

P-Ch 7 12

N-Ch 25 35

P-Ch 25 35

N-Ch 19 30

P-Ch 19 30

N-Ch 9 15

P-Ch 9 15

V

nA

A

mA



mS

V

pC

pF

ns

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v

300 s, duty cycle v 2%.

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Document Number: 71303

S-03840—Rev. B, 21-May-01

Si1501DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL

1.25

VGS = 3.5 thru 5 V

1.00

3 V

0.75

2.5 V

0.50

− Drain Current (A)I

D

0.25

0.00 01234

VDS − Drain-to-Source Voltage (V)

2 V

1.5 V

On-Resistance vs. Drain Current

7

6

)



5

4

Output Characteristics Transfer Characteristics

1 V

0.8

TC = −55_C

0.6

0.4

− Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS − Gate-to-Source Voltage (V)

25_C

Capacitance

50

40

30

125_C

3

− On-Resistance (r

2

DS(on)

1

0

01234

10

VDS = 6 V I

= 100 mA

D

8

6

4

− Gate-to-Source Voltage (V)

GS

2

V

0

0 100 200 300 400 500 600

VGS = 2.5 V

VGS = 4.5 V

ID − Drain Current (A)

Gate Charge

Qg − Total Gate Charge (pC)

20

C − Capacitance (pF)

10

0

048121620

1.6

1.4

)

1.2

(Normalized)

1.0

− On-Resistance (r

DS(on)

0.8

0.6

−50 −25 0 25 50 75 100 125 150

C

iss

C

oss

C

rss

V

− Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 4.5 V I

= 100 m A

D

T

− Junction Temperature (_C)

J

Document Number: 71303 S-03840—Rev. B, 21-May-01

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Si1501DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

3

1

0.1

0.01

− Source Current (A)I

S

0.001

0.00 0.3 0.9

TJ = 125_C

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

0.6

TJ = 25_C

TJ = −55_C

0.2

0.1

−0.0

1.2

Threshold Voltage

ID = 50 A

 )

− On-Resistance (r

DS(on)

8

6

ID = 250 mA

4

2

0

0246810

−0.1

Variance (V)V

GS(th)

−0.2

−0.3

−0.4

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C)

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Document Number: 71303

S-03840—Rev. B, 21-May-01

Si1501DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL

1.2

1.0

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

0.0 01234

VDS − Drain-to-Source Voltage (V)

5 V

4.5 V

3.5 V

2.5 V

On-Resistance vs. Drain Current

8

 )

6

Output Characteristics Transfer Characteristics

VGS = 2.5 V

VGS = 4.5 V

− On-Resistance (r

DS(on)

4

2

4 V

3 V

2 V

0.5

TC = −55_C

0.4

25_C

0.3

0.2

− Drain Current (A)I

D

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS − Gate-to-Source Voltage (V)

Capacitance

45

36

27

C

iss

18

C

C − Capacitance (pF)

9

oss

C

rss

125_C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10

VDS = 6 V I

= 80 mA

D

8

6

4

− Gate-to-Source Voltage (V)

GS

2

V

0

0 100 200 300 400 500 600

Qg − Total Gate Charge (pC)

Document Number: 71303 S-03840—Rev. B, 21-May-01

ID − Drain Current (A)

Gate Charge

1.6

1.4

)

1.2

(Normalized)

1.0

− On-Resistance (r

DS(on)

0.8

0.6

0

036912

V

− Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 4.5 V I

= 180 m A

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

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Si1501DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1

TJ = 150_C

0.1

0.01

− Source Current (A)I

S

0.001

0.00 0.5 01

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

TJ = 25_C

0.3

0.2

0.1

1.5

Threshold Voltage

ID = 50 A

6

5

 )

4

ID = 180 mA

3

− On-Resistance (r 2

DS(on)

1

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Variance (V)V

0.0

GS(th)

−0.1

−0.2

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C)

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Document Number: 71303

S-03840—Rev. B, 21-May-01

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