Datasheet Si1300BDL Datasheet (Vishay) [ru]

Si1300BDL

20

335

PRODUCT SUMMARY

V

(V)

DS

r

(W)

DS(on)

0.85 at VGS = 4.5 V 0.4

1.08 at VGS = 2.5 V 0.35

SC-70 (3-LEADS)

G

1

S

2

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

 TrenchFET Power MOSFET

a

I

(A)

D

3

D

Qg (Typ)

Marking Code

KE XX

 100 % R

YY

Lot Traceability
and Date Code

Part # Code

Tested

g

Vishay Siliconix

RoHS

COMPLIANT

D

G

Top View

Ordering Information: Si1300BDL–T1–E3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

TC = 25 C

Continuous Drain Current (TJ = 150 C)

Pulsed Drain Current I

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

TC = 70 C

TA = 25 C

TA = 70 C

TC = 25 C

TA = 25 C

TC = 25 C

TC = 70 C

TA = 25 C

TA = 70 C

DM

P

DS

GS

I

D

I

S

D

stg

20

"8

0.4

0.32

b, c

0.37

b, c

0.30

0.5

0.18

b, c

0.14

0.2

0.14

0.19

b, c

0.12

–55 to 150

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

b, d

t p 5 sec

R

thJA

thJF

540 670

450 570

S

V

A

W

C



C/W

Notes:
a. Based on T
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360 C/W.

Document Number: 73557
S–52388—Rev. A, 21–Nov–05

= 25 C.

C

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Si1300BDL

Drain-S

a

W

p

V

DD

R

L

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

VDS Temperature Coefficient

V

Temperature Coefficient

GS(th)

DVDS/T

DV

GS(th)/TJ

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

ource On-State Resistance

Dynamic

b

a

-

a

I

r

DS(on)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

DS

GS(th)

GSS

DSS

D(on)

iss

oss

rss

g

gs

gd

g

d(on)

r

d(off)

f

VGS = 0 V, I

J

VDS = VGS, I

VDS = 0 V, VGS = "8 V "100

VDS = 20 V, VGS = 0 V 100 nA

VDS = 20 V, VGS = 0 V, TJ = 55 C

VDS w 5 V, VGS = 4.5 V

VDS w 5 V, VGS = 2.5 V

VGS = 4.5 V, ID = 0.25

VGS =2.5 V, ID = 0.15 0.85 1.08

V

= 10 V, VGS = 0 V, f = 1 MHz 13

DS

V

= 10 V, VGS = 4.5 V, ID = 0.4 560 840

DS

V

= 10 V, VGS = 2.5 V, ID= 0.35 98

DS

VDD = 10 V, RL = 25 W

ID ^ 0.4 A, V

= 250 mA

D

I

= 250 mA

D

= 250 mA

D

f = 1 MHz 7 12

= 10 V,

= 25

= 4.5 V, Rg = 1 W

GEN

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

S

I

SM

SD

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TC = 25 C

I

= 0.05 A

S

20 V

20

–2.8

mV/C

0.4 1.0 V

5

0.4

0.12

0.65 0.85

35

4

335 503

85

7 12

10 15

8 13

7 12

0.18

0.4

0.7 1.2 V

nA

mA

A

pF

pC

W

ns

A

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Document Number: 73557

S–52388—Rev. A, 21–Nov–05

Si1300BDL

New Product

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

1.25

1.00

0.75

0.50

– Drain Current (A)I

D

0.25

0.00

0.0 0.5 1.0 1.5 2.0 2.5 3.0

2.0

Output Characteristics Transfer Characteristics curves vs. Temp

VGS = 10 V thru 2.5 V

VGS = 2.0 V

VGS = 1.5 V

VGS = 1.0 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

0.8

0.6

0.4

– Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5

50

TA = 25 C

TA = 125 C

TA = –55 C

VGS – Gate-to-Source Voltage (V)

Capacitance

W )

1.5

1.0

– On-Resistance (r

0.5

DS(on)

0.0

0.00 0.25 0.50 0.75 1.00 1.25

5

ID = 0.4 A

4

3

2

– Gate-to-Source Voltage (V)

GS

1

V

VGS = 2.5 V

VGS = 4.5 V

ID – Drain Current (A)

Qg–Gate Charge

VDS = 10 V

VDS = 16 V

40

30

20

C – Capacitance (pF)

10

0

0 4 8 12 16 20

On-Resistance vs. Junction Temperature

1.6

ID = 0.25 A

1.4

1.2

1.0

– On-Resistance

(Normalized)

DS(on)

r

0.8

C

iss

C

oss

C

rss

– Drain-Source Voltage (V)

V

DS

0

0 150 300 450 600

Qg – Total Gate Charge (nC)

Document Number: 73557
S–52388—Rev. A, 21–Nov–05

0.6
–50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (C)

J

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Si1300BDL

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

10.0

1.0

0.1

– Source Current (A)I

S

0.01

0.001

0.0 0.3 0.6 0.9 1.2 1.5

1.0

Forward Diode Voltage vs. Temp r

TJ = 150 C

TJ = 25 C

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage

W )

– On-Resistance (r

DS(on)

vs VGS vs Temperature

5.0

4.0

3.0

2.0

1.0

0.0
012345

DS(on)

TA = 125 C

TA = 25 C

Single Pulse Power, Junction-to-Ambient

10

Variance (V)V

GS(th)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2
–50 –25 0 25 50 75 100 125 150

TJ – Temperature (C)

ID = 250 mA

10

1

0.1

– Drain Current (A)I

D

0.01

*Limited by r

TA = 25 C

Single Pulse

8

6

Power (W)

4

2

0

0.001

Safe Operating Area

DS(on)

10 ms, 100 ms

1 ms

10 ms
100 m
1 s,
10 s,
100 s

TA = 25 C

1 100 1000100.10.01

Time (sec)

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4

0.001

0.1

– Drain-to-Source Voltage (V)

V

DS

u minimum VGS at which r

*V

GS

BV

Limited

DSS

1

10 100

is specified

DS(on)

Document Number: 73557

S–52388—Rev. A, 21–Nov–05

Si1300BDL

New Product

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

10

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

–4

Duty Cycle = 0.5

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

–3

–2

10

–1

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix

Notes:

P

DM

t

1

t

2

t

thJA

thJA

100

1

t

2

(t)

= 360 C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

– TA = PDMZ

JM

4. Surface Mounted

1 10 100010

0.2

0.1

0.1

0.05

Thermal Impedance

0.02

Normalized Effective Transient

Single Pulse

0.01

–4

10

–3

10

–2

10

–1

11010

Square Wave Pulse Duration (sec)

*The power dissipation PD is based on T
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

= 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for

J(max)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73557.

Document Number: 73557
S–52388—Rev. A, 21–Nov–05

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Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1