Datasheet SHF-0589 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SHF-0589 series is a high performance
GaAs Heterostructure FET housed in a low-cost surface-mount
plastic package. HFET technology improves breakdown voltage
while minimizing Schottky leakage current for higher power added
efficiency and improved linearity.

Output power at 1dB compression for the SHF-0589 is +34dBm
when biased for Class AB operation at 8V and 500mA. The
+45 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. They are well suited
for use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.

Preliminary

Preliminary

SHF-0589

DC-3 GHz, 2.0 Watt GaAs
HFET

Adequate heat sinking must be provided for this part to avoid ex­ceeding the maximum junction temperature. Methods include the
use of screws near the device, and filled vias beneath the part to
the ground plane. Refer to “Mounting and Thermal
Considerations” section on page 7 for more information.

Maximum Available Gain vs. Frequency
Vds = 8.0 volts, Idq = 500 mA

35

30

25

20

(dB)

15

max

10

G

5

0

0.1 0.8 1.5 2.2 2.9 3.6 4.3

Product Features

• Patented GaAs Heterostructure FET

Technology

• +34 dBm Output Power at 1 dB Compression

• +45 dBm Output IP3

• High Drain Efficiency: Up to 50% at Class AB

• 15 dB Gain at 900 MHz (Application circuit)

• 11 dB Gain at 1900 MHz (Application circuit)

Applications

• Analog and Digital Wireless System

• Cellular PCS, CDPD, Wireless Data, Pagers

Frequency (GHz)

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Bd

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W/C12

http://www.stanfordmicro.com

1

6.51

4.9

42
02

64
54

EDS-101242 Rev -B

Electrical Specifications at Ta = 25

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

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V0=sgV,V0.3=sdV

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Absolute Maximum Ratings

Notes:

1. Operation of this device above any one of these parameters
may cause permanent damage.

Plot of ID vs. VDS for VGS= -2.25V to 0V

1.2

VGS = 0 v

1

V

GS

= - 0.25

Preliminary

Preliminary

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

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SD

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V21+

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0.8

0.6

(amps)

D

I

0.4

0.2

V

= - 0.5 v

GS

VGS = - 0.75 v

= - 1.0

V

GS

V

= - 1.25 v

GS

V

= - 1.50

GS

V

GS

= - 1.75

0

0246810

VDS (Volts)

NOTE: I/V curves were taken using pulse sampling techniques. This
results in low duty cycle currents through the device and therefore
very low power levels. It is not recommended that these measurements
be taken in d.c. mode, as excessive current could result in damage to
the device.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

2

V

GS

= - 2.0 v

= - 2.25

V

GS

http://www.stanfordmicro.com

EDS-101242 Rev-B

S21 & S12 Versus Frequency

Preliminary

Preliminary

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

30

25

S

20

(dB)

15

21

S

10

5

0

012345

12

S

21

-25

-27

-29

-31

S

12

(dB)

-33

-35

-37

-39

-41

-43

Frequency (GHz)

S11 &S22 vs. Frequency ( 0.1 to 4.5 GHz)

Typical s-parameters at 25

)zHG(qerF |11S| gnA11S Bd12S |12S| gnA12S Bd21S |21S| gnA21S |22S| gnA22S

50.0

1.0

3.0

5.0

7.0

9.0

1.1

3.1

5.1

7.1

9.1

1.2

3.2

5.2

0.3

5.3

0.4

5.4

89.09.12-8.629.122.5611.04-10.09.6891.03.941-

79.00.04-3.626.029.5518.93-10.01.6652.02.841-

29.02.89-0.322.410.5211.33-20.05.8314.07.551-

09.09.721-0.020.011.8015.13-30.01.4274.02.461-

98.05.441-5.715.75.791.13-30.08.6105.05.961-

98.05.551-6.510.66.988.03-30.05.1115.02.371-

98.04.361-9.310.59.287.03-30.08.725.00.671-

98.05.961-6.212.44.777.03-30.01.525.05.871-

98.09.471-4.117.38.176.03-30.08.235.03.971

98.02.9713.013.37.666.03-30.08.035.06.771

88.05.6714.99.22.267.03-30.06.1-45.06.571

98.09.2715.87.25.757.03-30.07.2-45.02.471

88.05.9617.74.22.357.03-30.01.4-55.01.271

88.03.6610.72.20.947.03-30.04.5-55.05.071

78.05.8513.58.14.838.03-30.08.7-65.03.661

88.03.1510.46.16.829.03-30.02.9-85.03.261

98.04.4417.24.12.919.03-30.00.01-06.01.851

09.06.8317.12.11.018.03-30.00.11-16.07.351

°°

°

C (Vds = 8V, Ids = 500mA)

°°

No external matching, Scattering parameters are de-embedded on test fixture to device
lead at package edge.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

3

http://www.stanfordmicro.com

EDS-101242 Rev-B

900 MHz Application Circuit at 25

ς

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

°°

°

C (Vds=8V, Idq=500mA)

°°

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7,3dCFp022seires81HCMMHOR

8,4dCFp0001seires81HCMMHOR

9,5dCFu1.0tlov53,"A"ezis,MULATNAT

1MCFp8.6seires81HCMMHOR

2MCFp9.3seires81HCMMHOR

2,1MLHn7.4K7N4HF-5001LLOKOT

1saibLHn28TN28HF-8061LLOKOT

2saibLHn28BJX028-SC8001TFARCLIOC

1batsRsmho743060ezis

2batsRsmho013060ezis

P

(dBm) IP3(dBm) Output tone Level (dBm)

1dB

34.4 45.8 15

Ω

Microstrip Segment Specifications

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1ZzHM009@.ged6.2,smho05

2ZzHM009@.ged5.3,smho05

3ZzHM009@.ged8.8,smho05

4ZzHM009@.ged1.3,smho05

5ZzHM009@.ged7.11,smho05

6ZzHM009@.ged6.3,smho05

7ZzHM009@.ged6.2,smho05

hase shift functional block between com-

P

ponents are calculated based on wavelength
of 900 MHz signal on FR4 board material
with dielectric constant of 4.1, microstrip
width and height dimensions of W=.054
inch and h= .031 inch.

Test Data @ 0.9 GHz

Preliminary

Preliminary

°°

°C

°°

80

60

40

30

P

vs. Pin T=25

out

40

20

(dBm)

out

P

10

20

Efficiency (%)

0

0 5 10 15 20

Pin (dBm)

°°

°C

°°

18
16
14

S

22

(dB)

21

S

12
10

8

(dB)

22

, S

11

S

S11 & S22 vs. Frequency T=25

0

-5

-10

-15

S

11

-20

-25

-30

0.7 0.8 0. 9 1 1.1

Frequency (GHz)

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

4

Drain Efficiency & ID vs. P

I

D

Drain Efficiency

out

T=25

°°

°C

°°

15 20 25 30 35

P

(dBm)

out

S21& S12vs. Frequency T=25

S

21

S

12

°°

°C

°°

0.7 0.8 0.9 1 1.1

Frequency (GHz)

http://www.stanfordmicro.com

EDS-101242 Rev-B

800

600

400

200

0

-20

-25

-30

-35

-40

(mA)

D

I

(dB)

12

S

1.9 GHz Application Circuit at 25

ς

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

°°

C (Vds=8V, Idq=500mA)

°

°°

.gised.feReulaVelytS/rebmuNtraP

8,6,1dCFp33seires81HCMMHOR

2dCFp022seires81HCMMHOR

7,3dCFp81seires81HCMMHOR

9,4dCFp0001seires81HCMMHOR

5dCFp001seires81HCMMHOR

01dCFu1.0V53,"A"ezis,mulatnaT

2,1CCFp33seires81HCMMHOR

1MCFp2.2seires81HCMMHOR

2MCFp8.1seires81HCMMHOR

1saibLHn01TN01HF-8061LLOKOT

2saibLHn22BJX022-SC8001TFARCLIOC

1batsRsmho013060ezis

2batsRsmho1.53060ezis

P

1dB

34 45.6 46.2% 50.7%

Ω

Preliminary

Preliminary

Microstrip Segment Specifications

.gised.feReulaV

1ZzHM0091@.ged3.7,smho05

2ZzHM0091@.ged3.5,smho05

3ZzHM0091@.ged9.21,smho05

4ZzHM0091@.ged6.6,smho05

5ZzHM0091@.ged6.02,smho05

6ZzHM0091@.ged5.4,smho05

7ZzHM0091@.ged1.7,smho05

hase shift functional block between com-

P

ponents are calculated based on wavelength
of 900 MHz signal on FR4 board material
with dielectric constant of 4.1, microstrip
width and height dimensions of W=.054
inch and h= .031 inch.

Test Data @ 1.9 GHz

(dBm) IP3(dBm) PAE Eff (8V, 500mA)

°°

°C Drain Efficiency & I

°°

40

P

vs. Pin T=25

out

30

20

(dBm)

out

P

Efficiency (%)

10

0 5 10 15 20 25

& S22 vs. Frequency T=25

S

11

0

-5

-10

(dB)

-15

22

, S

-20

11

S

-25

1.5 1.7 1.9 2.1 2.3

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

Pin (dBm)

S

11

Frequency (GHz)

°°

°C

°°

S

22

(dB)

21

S

5

vs. P

T=25

out

I

80

D

60

40

20

Drain Eff iciency

0

15 20 25 30 35

Pout (dBm)

S

& S12 vs. Frequency T=25

14
12
10

21

S

21

S

8

12

6
4

1.5 1.7 1.9 2.1 2.3

Frequency (GHz)

http://www.stanfordmicro.com

EDS-101242 Rev-B

°°

°C

°°

800

D

600

400

200

(mA)

D

I

0

°°

°C

°°

-20

-25

-30

-35

(dB)

12

S

-40

2.45 GHz Application Circuit at 25

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

°°

°

C (Vds=8V, Idq=500mA)

°°

.gised.feReulaVelytS/rebmuNtraP

6,2,1dCFp6.5seires81HCMMHOR

7,3dCFp86seires81HCMMHOR

8,4dCFp0001seires81HCMMHOR

9,5dCFu1.0V53,"A"ezis,mulatnaT

1CCFp6.5seires81HCMMHOR

3,1MCFp8.1seires81HCMMHOR

2MCFp2.1seires81HCMMHOR

1saibLHn51TN51HF-8061LLOKOT

2saibLHn81BJX081-SC8001TFARCLIOC

1batsRsmho023060ezis

2batsRsmho2.23060ezis

P

1dB

34.7 44.26 15

ς

Ω

Preliminary

Preliminary

Microstrip Segment Specifications

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1ZzHM0542@.ged7.9,smho05

2ZzHM0542@.ged3.9,smho05

3ZzHM0542@.ged2.42,smho05

4ZzHM0542@.ged0.8,smho05

5ZzHM0542@.ged7.21,smho05

6ZzHM0542@.ged4.91,smho05

7ZzHM0542@.ged4.02,smho05

hase shift functional block between com-

P

ponents are calculated based on wavelength
of 900 MHz signal on FR4 board material
with dielectric constant of 4.1, microstrip
width and height dimensions of W=.054
inch and h= .031 inch.

Test Data @ 2.45 Ghz

(dBm) IP3(dBm) Output tone Level (dBm)

°°

°C

°°

80

60

40

20

Efficiency (%)

40

30

(dBm)

20

out

P

P

vs. Pin T=25

out

10

0 5 10 15 20 25

Pin (dBm)

S11 & S22 vs. Frequency T=25

0

-5

-10

(dB)

22

-15

, S

11

-20

S

S

22

S

11

-25

1.96 2.1 2.24 2.38 2.52 2.66 2.8 2.94

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

Frequency (GHz)

°°

°C

°°

(dB)

21

S

6

Drain Efficiency & ID vs. P

I

D

Drain Efficiency

out

T=25

0

15 20 25 30 35

Pout (dBm)

S

& S12 vs. Frequency T=25

21

15

S

21

10

S

12

5

0

1.96 2.1 2.24 2.38 2.52 2.66 2.8 2.94

Frequency (GHz)

http://www.stanfordmicro.com

EDS-101242 Rev-B

°°

°C

°°

°°

°C

°°

800

600

400

200

0

-20

-25

-30

-35

-40

(dB)

12

S

(mA)

D

I

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

Preliminary

Preliminary

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

Part Number Ordering Information

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Mounting and Thermal Considerations:

It is very important that adequate heat sinking be provided to
avoid exceeding the maximum device junction temperature.
All of the following suggestions should be followed to ensure
maximum operating life of the device:

1. Use 2 ounce copper if possible.

2. Use a large ground pad area with many plated through-

holes (solder filling is recommended).

3. Multiple filled vias are required directly below the SOT-89

ground tab.

4. Solder the copper pad on the backside of the device

package to the ground plane.

5. Use three point board seating with 2-56 machine screws

(no more than 0.2 inch from the device) to provide a low
thermal resistance path to the mounting plate.

6. We recommend thermal transfer paste be used between

the board and the mounting plate.

Part Symbolization

The part will be symbolized with a “H5” designator
on the top surface of the package.

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noitangiseD

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2ecruoS

3niarD

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Outline Drawing

1

H5

2

3

4

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

7

http://www.stanfordmicro.com

EDS-101242 Rev-B

For 89 Outline

SHF-0589 DC-3GHz, 2 Watt GaAs HFET

Component Tape and Reel Packaging

Tape Dimensions

Preliminary

Preliminary

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522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC

8

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10.0-/+19.4

10.0-/+25.4

10.0-/+09.1

10.0-/+00.8

01.0-/+06.1

50.0-/+55.1

10.0-/+00.4

10.0-/+57.1

52.0-/+01.9

10.0-/+50.0

30.0-/+0.21

T

F

2

http://www.stanfordmicro.com

EDS-101242 Rev-B

50.0-/+03.0

01.0-/+05.5

01.0-/+00.2